Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C4003 TECHNICAL DATA DATA SHEET 932, REV. – STANDARD RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol
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1C4003
500mA,
250mA
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1C4004
Abstract: No abstract text available
Text: General Purpose-Silicon Rectifier Die PART NUMBER: 1C4004 CONFIGURATION: more than 500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 400 Volts MAX. OUTPUT CURRENT IO Amps MAX JUNCTION TEMPERATURE
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1C4004
500ns)
1C4004
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1C4004
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C4004 TECHNICAL DATA DATASHEET 4233, Rev- STANDARD RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol
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1C4004
500mA,
250mA
1C4004
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UM0560
Abstract: STM8S105x6 STM8L STM8 bootloader STM8S105XX STM8S
Text: UM0560 User manual STM8L/S bootloader 1 Introduction This user manual contains the bootloader specifications for STM8L/S devices which contain a bootloader embedded in the system memory of the device the ROM . Through this firmware, the device memory can be erased and programmed using one of the standard
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UM0560
UM0560
STM8S105x6
STM8L
STM8 bootloader
STM8S105XX
STM8S
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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PCM TMS320C5510
Abstract: ap3114 69 lvb SPRU769 BUT31 1D400 Datasheet of IC 7400 ARM926EJS OMAP5910 OMAP5912
Text: OMAP5912 Multimedia Processor DSP Subsystem Reference Guide Literature Number: SPRU750A March 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any
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OMAP5912
SPRU750A
OMAP5912
PCM TMS320C5510
ap3114
69 lvb
SPRU769
BUT31
1D400
Datasheet of IC 7400
ARM926EJS
OMAP5910
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409a229930405100
Abstract: 1C280-1C2BF CA91L8200
Text: MPC190 Security Co-Processor User’s Manual MPC190UM/D Rev. 1.0, 10/2001 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE DigitalDNA is a trademark of Motorola, Inc. Information in this document is provided solely to enable system and software implementers to use PowerPC microprocessors. There
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MPC190
MPC190UM/D
409a229930405100
1C280-1C2BF
CA91L8200
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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SGA23
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
SGA23
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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FAA064
Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29GL-N
S29GL256N,
S29GL128N
S29GL-N
FAA064
SPANSION S29GL128
S29GL128
S29GL-P
GL128N
GL256N
S29GL128N
S29GL256N
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ST3215
Abstract: No abstract text available
Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RL78/G13
16-Bit
R01UH0146EJ0310
ST3215
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l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV256M
l256mh113
L256ML123R
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Untitled
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL128P,
S29GL256P,
S29GL512P
S29GL128N,
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BCM 4709
Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、
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78K0R/Fx3
78K0R/FB3:
PD78F1804
78F1805
78F1806
78F1807
78F1804
BCM 4709
78F1830
78F1834
78f1835
78f1845
78f1826
78F1830GAA2-GAM-G
ADS TS20
PD78F1841
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uPD78F1024
Abstract: F0648H nec f0123h nec f0134H F0616 842 623 smd nec 501 t 2 prot usb 2.0 hab Controller F0543 st stt 128
Text: User’s Manual 78K0R/KC3-L, 78K0R/KE3-L On-Chip USB Controller 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers PD78F1022 μPD78F1023 μPD78F1024 μPD78F1025 μPD78F1026 All information contained in these materials, including products and product specifications,
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78K0R/KC3-L,
78K0R/KE3-L
16-Bit
PD78F1022
PD78F1023
PD78F1024
PD78F1025
PD78F1026
current600,
uPD78F1024
F0648H
nec f0123h
nec f0134H
F0616
842 623 smd
nec 501 t
2 prot usb 2.0 hab Controller
F0543
st stt 128
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L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV256M
L256MH113R
L256ML113R
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Untitled
Abstract: No abstract text available
Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-P
S29NS512P,
S29NS256P,
S29NS128P
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a22t
Abstract: S19G S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
a22t
S19G
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SILICON DICE motorola
Abstract: Motorola 1N4007 1n4007 die
Text: MOTOROLA SC -CDIODES/OPTOÏ 6367255 34 MOTOROLA SC DE 1 b3b7SSS 0a3fll3fl T <D I O D E S / O P T O 34C 38138 D T- / - OST SILICON RECTIFIER DICE continued) 1C4001/6 DIE NO. LINE SOURCE — DRL526 This die provides performance equal to or better than that of
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DRL526
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1C4001/6
1N4007
SILICON DICE motorola
Motorola 1N4007
1n4007 die
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Untitled
Abstract: No abstract text available
Text: 1C4002 CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: • - • • • • • • • • • • tRAC tCAC tRC K M 4 1C4002- 8 [ 80ns 20ns 1 50ns KM 41C 4002-10 ' 100ns 25ns
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KM41C4002
200ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: MODELS M, C, F,T, B NTC Thermistors Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 11 different R-T curves • Configured for standard P.C. board mounting or assembly in probes STANDARD ELECTRICAL SPECIFICATIONS and DIMENSIONAL CONFIGURATIONS
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