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    1C00001 Search Results

    1C00001 Result Highlights (2)

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    10106267-1C00001LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Header, 1HP 1HP(OMIT) 12LP Visit Amphenol Communications Solutions
    10106266-1C00001LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Header, 2HP 12LP Visit Amphenol Communications Solutions
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    1C00001 Price and Stock

    Renesas Electronics Corporation RTK0ES1001C00001BJ

    RENESAS SOLUTION STARTER KIT FOR
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    DigiKey RTK0ES1001C00001BJ Box 43 1
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    Avnet Americas RTK0ES1001C00001BJ Box 5 4 Weeks 1
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    Mouser Electronics RTK0ES1001C00001BJ 8
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    Chip1Stop RTK0ES1001C00001BJ Bulk 4
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    New Advantage Corporation RTK0ES1001C00001BJ 6 1
    • 1 $520.11
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    Diodes Incorporated NX51C00001

    Clock SAW Oscillator SEAM5032 T&R 1K - Tape and Reel (Alt: NX51C00001)
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    Avnet Americas NX51C00001 Reel 12 Weeks 1,000
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    Mouser Electronics NX51C00001
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    SkyHigh Memory Limited S40FC004C1B1C00001

    eMMC 4GB e.MMC5.1 BGA 11.5 x 13 x 0.8 mm with Tray Packing: MLC Enhanced Performance FW AND Old Process
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    Mouser Electronics S40FC004C1B1C00001
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    Rochester Electronics S40FC004C1B1C00001 38,224 1
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    Amphenol Corporation 10106131-C000001LF

    Power to the Board PWRBLADE+ REC VTL
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    Mouser Electronics 10106131-C000001LF
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    1C00001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


    Original     		PDF M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


    Original     		PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


    Original     		PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    Untitled

    Abstract: No abstract text available
    Text: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands


    Original     		PDF F49L160UA/F49L160BA 152x8 576x16 9s/11s

    MX29LV160CBTC-90

    Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
    Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of


    Original     		PDF MX29LV160C 16M-BIT 2Mx8/1Mx16] 100mA Pac9/2006 MX29LV160CBTC-90 29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13

    Intel Stacked CSP

    Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
    Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology


    Original     		PDF 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Intel Stacked CSP transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160

    MX29LV400

    Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the


    Original     		PDF MX29LV400C MX29LV800C MX29LV160C MX29LV160D MX29LV400 mx29LV160cbtc-70g MX29LV160CBTI-70G MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G

    MX29LV033

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


    Original     		PDF MX29LV033A 32M-BIT 200nA 10-year PM1017 OCT/06/2003 MX29LV033

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: F49L160UA/F49L160BA Operation Temperature condition -40 C~85 C 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 3.0V-3.6V Fast access time: 90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard


    Original     		PDF F49L160UA/F49L160BA 152x8 576x16

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    code lock circuit flow chart

    Abstract: M28W320ECB M28W320ECT M28W320
    Text: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)


    Original     		PDF M28W320ECT M28W320ECB 100ns TFBGA47 TSOP48 code lock circuit flow chart M28W320ECB M28W320ECT M28W320

    JESD97

    Abstract: M28W320FCB M28W320FCT
    Text: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns


    Original     		PDF M28W320FCT M28W320FCB JESD97 M28W320FCB M28W320FCT

    Untitled

    Abstract: No abstract text available
    Text: F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands


    Original     		PDF F49L160UA/F49L160BA 152x8 576x16

    29070* intel

    Abstract: transistor w18 57 small
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


    Original     		PDF 28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small

    PF38F2030

    Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
    Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit


    Original     		PDF W18/W30 32-Mbit, 64-Mbit 32-Mbit 16-Mbit 64W18 64W30 64W30 RD38F2240WWZDQ0 PF38F2030 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0

    Untitled

    Abstract: No abstract text available
    Text: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V


    Original     		PDF M36WT864TF M36WT864BF 100ns M36WT864TF: 8810h M36WT864BF: 8811h

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58LR128HT M58LR128HB

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


    OCR Scan     		PDF Am29LV033C 63-ball 40-pin

    T1A16

    Abstract: 29LV116
    Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and


    OCR Scan     		PDF Am29LV116B ar116B T1A16 29LV116

    Untitled

    Abstract: No abstract text available
    Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write


    OCR Scan     		PDF 16-038-TSOP-1 TSR040--40-Pin 16-038-TSOP-1 TSR040 Am29LV017B FGC048--48-Ball 16-038-FGC-2

    032XM

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


    OCR Scan     		PDF Am29LV033C 63-ball 40-pin 032XM

    29064

    Abstract: No abstract text available
    Text: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier


    OCR Scan     		PDF 28F800C3, 28F160C3, 28F320C3 64-KB Consump001 28F160C3 29064