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    1BS TRANSISTOR Search Results

    1BS TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1BS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 817

    Abstract: BC817UPN transistor 1Bs SC74 817 transistor 817 c w
    Text: BC817UPN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5 4


    Original     		PDF BC817UPN VPW09197 EHA07177 EHP00223 EHP00222 EHP00224 EHP00218 Jul-02-2001 ic 817 BC817UPN transistor 1Bs SC74 817 transistor 817 c w

    1B marking

    Abstract: No abstract text available
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW BC847A 1B marking

    transistor 1Bs

    Abstract: No abstract text available
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5 4 VPW09197


    Original     		PDF BC817UPN VPW09197 EHA07177 EHP00223 EHP00222 EHP00224 EHP00218 Nov-29-2001 transistor 1Bs

    transistor 1Bs

    Abstract: ic 817 BC817UPN
    Text: BC 817U PN NPN/PNP Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 C1 B2 E2 6 5


    Original     		PDF VPW09197 EHA07177 SC-74 EHP00223 EHP00222 EHP00224 EHP00218 Apr-22-1999 transistor 1Bs ic 817 BC817UPN

    BC846 Infineon

    Abstract: BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon BC847BL3 bc846 base resistance for SOT23 BC 945 BC847BF marking 2Gs 1bs sot323 BC 945 p marking 1F SOT323

    transistor 1Bs

    Abstract: ic 817 1BS transistor marking 1Bs BC817UPN SC74
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		PDF BC817UPN VPW09197 EHA07177 Collector-emitt10 EHP00223 EHP00222 EHP00224 EHP00218 Aug-21-2002 transistor 1Bs ic 817 1BS transistor marking 1Bs BC817UPN SC74

    BC846 Infineon

    Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC846 Infineon 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850

    BC 945

    Abstract: BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP 1 2006-09-19


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 BC 945 BC847F-BC850F BC847 SOT23 BF850 marking code marking CODE 1BS 1bs sot323 BC849CW G t marking SOT323 marking 1F SOT323

    bf850

    Abstract: marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 bf850 marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B

    1BS transistor

    Abstract: No abstract text available
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		PDF BC817UPN VPW09197 EHA07177 1BS transistor

    C1741

    Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
    Text: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


    Original     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1741 Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC

    Untitled

    Abstract: No abstract text available
    Text: BC817UPN NPN/PNP Silicon Transistor Array  For AF input stages and driver applications 5 4 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 Tape loading orientation


    Original     		PDF BC817UPN VPW09197 EHA07177

    1BS transistor

    Abstract: No abstract text available
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain 4 3 5 • Low collector-emitter saturation voltage 2 6 1 • Two galvanic internal isolated NPN/PNP transistors in one package Tape loading orientation


    Original     		PDF BC817UPN EHA07177 1BS transistor

    transistor 1Bs

    Abstract: 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package


    Original     		PDF BC817UPN EHA07177 transistor 1Bs 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859

    1bs sot323

    Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W

    MARKING CODE 21E SOT23

    Abstract: BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23
    Text: BC846.BC850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856, BC857, BC858 BC859, BC860 PNP


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 VPS05161 BC846A BC846B MARKING CODE 21E SOT23 BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23

    transistors BC 848

    Abstract: VSO05561 21E sot
    Text: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2


    Original     		PDF VSO05561 846AW OT-323 846BW 847AW 847BW 847CW transistors BC 848 VSO05561 21E sot

    BC848T

    Abstract: CB-502 BC849CT 849T BC858T BC846T
    Text: BC846T.BC850T NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1


    Original     		PDF BC846T. BC850T BC856T, BC857T, BC858T, BC859T, VPS05996 BC846AT BC846BT BC848T CB-502 BC849CT 849T BC858T BC846T

    BC857

    Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC857 BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    1Bs sot-23

    Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
    Text: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP


    Original     		PDF OT-23 Nov-11-1999 120Hz 1Bs sot-23 sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


    OCR Scan     		PDF BB515 p270k2 transistor Bs 998