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    1BP TRANSISTOR Search Results

    1BP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1BP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


    Original     		PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    transistor 1fp

    Abstract: transistor 1Bp BC848 1FP transistor BC847 1Bp transistor NPN BC846B SOT23 BC846 1Lp marking BC846B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


    Original     		PDF M3D088 BC846; BC847; BC848 BC856; BC857; BC858. transistor 1fp transistor 1Bp BC848 1FP transistor BC847 1Bp transistor NPN BC846B SOT23 BC846 1Lp marking BC846B

    transistor 1fp

    Abstract: 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 BC848 npn general purpose transistors 1gp npn code 1gp
    Text: DISCRETE SEMICONDUCTORS BC846; BC847; BC848 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Mar 12 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC847C BC846A transistor 1fp 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 npn general purpose transistors 1gp npn code 1gp

    transistor 1Bp

    Abstract: bc847 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor bc846 BC646B bc847c
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC846; BC847; BC848 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


    OCR Scan     		PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC846A BC846B BC847 transistor 1Bp 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor BC646B bc847c

    SOT89 MARKING CODE 3D

    Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
    Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK


    OCR Scan     		PDF OT143, OT223 OT323 PXTA27 BCX51 BCW60A BCW60B BCX51-10 BCW60C BCX51-16 SOT89 MARKING CODE 3D sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G

    BC847

    Abstract: BC848
    Text: BC846 BC847 BC848 _ SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. Q UICK REFERENCE D A T A BC846 BC847 BC848 80 50 30 V V Collector-em itter voltage V gg = 0 V CES


    OCR Scan     		PDF BC846 BC847 BC848 OT-23 BC847 BC848

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848


    OCR Scan     		PDF QQ24453 BC846 BC847 BC848 OT-23 QQ244S7

    44E SOT-23

    Abstract: SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp BC846 marking 1Gp BC846B BC847 BC847B
    Text: •I b bS 3 lì31 GQ24M53 *44^ HIAPX N AUER PHILIPS/DISCRETE B C 846 BC847 BC848 fc.7E 1> 7 V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A Collector-emitter voltage {V g g = 0


    OCR Scan     		PDF GQ24453 BC846 BC847 BC848 OT-23 BC846 BC847 35MHz 44E SOT-23 SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp marking 1Gp BC846B BC847B

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    B426

    Abstract: No abstract text available
    Text: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE Features W ffi-fk • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications • — 9 General Purpose Inverter


    OCR Scan     		PDF l95t/R89 B426

    2DI150M-120

    Abstract: M210 transistor AFR 16
    Text: 2 D I ✓ 1 ^ ^ 5 is M - 1 2 1 5 o a ^ i> il — )\/ POWER TRANSISTOR MODULE : Features • • hFE^'flSl^ High Arm Short Circuit Capability High DC Current Gain ft 4 V's • 7U — • Jfeillffi — KrtJSS Including F reew heeling Diode Insulated Type


    OCR Scan     		PDF 2DI150M-120O5OA) E82988 2DI150M-120 M210 transistor AFR 16

    2DI100M-120

    Abstract: transistor w1w 30S3 D1100 M210 T151
    Text: 2 D 1 I O O - M 1 20 i o o a y<7_ POWER TRANSISTOR MODULE : Features • • h F E ^ fii' High Arm Short Circuit Capability High DC Current Gain • 7 ' J — f r ' i 1) • K rtj Including Freew h eelin g Diode Insulated Type •Applications • —? General Purpose Inverter


    OCR Scan     		PDF D1100 E82988 12-ti EaT130fà l95t/R89 Shl50 2DI100M-120 transistor w1w 30S3 M210 T151

    2DI150M-120

    Abstract: No abstract text available
    Text: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iS j^ High Arm Short Circuit Capability h F E /^iftu High DC Current Gain 7 *)~ — KF3 Including F reew heeling Diode ifeiHffi Insulated Type


    OCR Scan     		PDF Rati388-7681 I95t/R89) 2DI150M-120

    transistor kF 303

    Abstract: 03AIW 6DI30M-120 M613
    Text: 6DI30M-1 2 0 3o a ^ ' 7 — h ~7 s ' i s IWfê’+fè : Outline Drawings ^ i s 3 - — )\r POWER TRANSISTOR MODULE : Features • • hFEA^&i,' 7.5 19 I, High Arm Short Circuit Capability High DC Current Gain BU EU □a • 7 U —f c 'f O y — K F*9>0c Including Freewheeling Diode


    OCR Scan     		PDF 6DI30M-1 E82988 I95t/R89) transistor kF 303 03AIW 6DI30M-120 M613

    a7v TRANSISTOR

    Abstract: t460 transistor 2DI100M-120 M210 T151 T930
    Text: 2 D I 1 O O Y -? i s i s X ? y 9 _ M - 1 20 i o o a n .— )V : Outline Drawings POWER TRANSISTOR MODULE : Features • High Arm Short Circuit Capability • h F E ^ f i i' • 7 U —f • High DC Current Gain r ' i 1) — KF*Jj Including Free Wheeling Diode


    OCR Scan     		PDF 2DI1OOM-120 E82988 19S24 I95t/R89 Shi50 a7v TRANSISTOR t460 transistor 2DI100M-120 M210 T151 T930

    ed7 diode

    Abstract: 2DI50M-120
    Text: 2DI50M-1 20 50A / ' 7 — \ ~7 '•/'J’ TsÇ I 3.—JU : Outline Drawings POWER TRANSISTOR MODULE Features • • High A rm Short Circuit Capability • h F E *''S v.' High D C C urrent Gain • ~7l) — t M V>9'9*A — KftflR Including Free W heelin g Diode


    OCR Scan     		PDF 2DI50M-120 E82988 ed7 diode

    T-CON Schematic

    Abstract: 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000
    Text: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iSj^ High Arm Short Circuit Capability hFE/^iftu High DC Current Gain 7 *)~ — KF3 Including Freewheeling Diode ifeiHffi Insulated Type


    OCR Scan     		PDF 50M-120 E82988 egTS30Â I95t/R89) T-CON Schematic 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000

    B4002D

    Abstract: diode ml35
    Text: 2 D I 1 5 M - 1 2 1 5 0 A ^ ± / \ r7 - :E ^ i L - ; U ' < I7 - h POWER TRANSISTOR MODULE •¡HfS : Features • High Arm Short Circuit Capability • hFE^'Sv.' High DC Current Gain • —ft 'f ' J 's W - i i — KrtflK Including Free Wheeling Diode


    OCR Scan     		PDF I95t/R89) B4002D diode ml35

    6Bp SMD

    Abstract: code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD
    Text: General Purpose SM D * NPN Transistors 11 General Purpose SMD NPN Transistors Description Features Philips C om ponents general purpose transistors combine the highest quality standards with state-of-the-art pro­ duction equipment to fulfill the need for generic, low-cost


    OCR Scan     		PDF OT-23 OT-89 OT-143 OT-223 6Bp SMD code marking 6Cp sot-23 sot-23 Marking k1p smd 1Gp d2p smd code smd 1Bp SS SMD MARKING SOT23 smd U1p smd marking code BC817 p1g SMD

    Untitled

    Abstract: No abstract text available
    Text: 2 D 1 I O O - M 1 20 i o o a y<7_ POWER TRANSISTOR MODULE : Features • • h F E ^ fii' High Arm Short Circuit Capability High DC Current Gain • 7 ' J — f r ' i 1) • K rtj Including Freew h eelin g Diode Insulated Type •Applications • —? General Purpose Inverter


    OCR Scan     		PDF

    6di50m

    Abstract: No abstract text available
    Text: 6 D I 5 0 M - 1 2 0 5 oa *7 — \ ~7 "S 7* 9 is — JU : Outline Drawings POWER TRANSISTOR MODULE 1 • 4 $ £ : Featu res 14 High Arm Short Circuit Capability F 6 i 17 / & WP tuPEvp| p«P ß ö l^ jj_ ~P H ■ § H fftv ip r f l - r ^ t ù ■A pp lications


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: D 2 I ,< rj — 1 M ^ - 1 2 i o o a 3.—JU W ïfé T l'ïi : Outline Drawings POWER TRANSISTOR MODULE • 9U S : Features • JSSSRS^iSSl.' High Arm Short Circuit Capability • hFEfr'Sv.' High DC Current Gain • 7 'J —f r 'f'J > $ ¥ 4 % —KrtSR Including Freewheeling Diode


    OCR Scan     		PDF E82988 I95t/R89)

    transistor 1Bp

    Abstract: 1Bp transistor transistor 337 AJ b338
    Text: 1DI300MN-120I300A '•Outline Drawings POWER TRANSISTOR MODULE ■4#^: : Fea tu res • hFE)b''fit' High DC Current Gain • r * - K rt* • s i s w a f t iiE n r jii : A p p licatio n s • ? General Purpose Inverter • Uninterruptible Power Supply • N C X fN R W Servo & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF 1DI300MN-120I300A) transistor 1Bp 1Bp transistor transistor 337 AJ b338

    A5J diode

    Abstract: BO-120 DI200 M109 sf transistor 1DI200M-120 1di200
    Text: 1 DI 2 0 0 M -1 20 200a - J U L - J i , P O W E R T R A N S IS T O R M O D U LE : Features • • h F E ^ ffii' • 7 '; — • High Arm Short Circuit Capability High DC Current Gain — KJ*3 Including Free Wheeling Diode Insulated Type : Applications


    OCR Scan     		PDF 1DI200M-1 E82988 A5J diode BO-120 DI200 M109 sf transistor 1DI200M-120 1di200