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    1B SOT23-6 TRANSISTOR Search Results

    1B SOT23-6 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1B SOT23-6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code SOT-23

    Abstract: marking CODE 1G transistor 1f sot-23 sot23 MARKING 1l 1k sot-23 BC848C BC846A BC847A BC847B BC848A
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 200mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 200mW, OT-23 MIL-STD-202, transistor marking code SOT-23 marking CODE 1G transistor 1f sot-23 sot23 MARKING 1l 1k sot-23 BC848C BC846A BC847A BC847B BC848A

    Untitled

    Abstract: No abstract text available
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 250mW, OT-23 MIL-STD-202, MGT724

    RF sot-23

    Abstract: transistor 1f sot-23 F11 SOT23 transistor marking code SOT-23 BC847A transistor 1g sot-23 marking code BE sot-23 1E SOT23 F11 SOT 23 F11 SOT23-3
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 200mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 200mW, OT-23 MIL-STD-202, C/10s 008gram MGT724 RF sot-23 transistor 1f sot-23 F11 SOT23 transistor marking code SOT-23 BC847A transistor 1g sot-23 marking code BE sot-23 1E SOT23 F11 SOT 23 F11 SOT23-3

    transistor 1f sot-23

    Abstract: transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A
    Text: BC846A/B, BC847A/B/C, BC848A/B/C 250mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF BC846A/B, BC847A/B/C, BC848A/B/C 250mW, OT-23 MIL-STD-202, MGT724 transistor 1f sot-23 transistor marking code SOT-23 1B SOT-23 1k sot-23 NPN BC846B SOT23 BC846B BC847A 1a sot-23 BC847C BC848A

    1F SOT 23

    Abstract: 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 1F SOT 23 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850

    marking sk sot-23

    Abstract: SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 marking sk sot-23 SOT23 marking sk SOT-23 marking E9 j y w sot23 SOT-23 marking SK MARKING SY SOT23 sot23 Marking f7 marking KL sot-23 sk sot-23 sot-23 Marking EJ

    marking 04 sot-23

    Abstract: MARKING 2F SOT23 2F SOT23 marking NF sot-23 SOT-23 ASE sot23 MARKING 1l LBC* MARKING marking 1G SOT23 sot23 marking 2f marking 2f sot-23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1 Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • Pb-Free Packages are Available 3 MAXIMUM RATINGS Rating


    Original     		PDF LBC846ALT1 LBC846 LBC847, LBC850 LBC848, LBC849 marking 04 sot-23 MARKING 2F SOT23 2F SOT23 marking NF sot-23 SOT-23 ASE sot23 MARKING 1l LBC* MARKING marking 1G SOT23 sot23 marking 2f marking 2f sot-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • Pb-Free Packages are Available 3 MAXIMUM RATINGS Rating


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    BC846

    Abstract: TRANSISTOR 1g sot23 npn BC847 transistor 1f sot-23 BC847 sot package sot-23 transistor bc846 MARKING bc847 SOT-23 transistor marking pb 6 sot-23 1g sot23 transistor marking code SOT-23
    Text: BL Galaxy Electrical Production specification NPN general purpose Transistor FEATURES BC846/847/848 Pb z High current gain. z Excellent hFE linearity . z Low noise between 30Hz and 15kHz. z For AF input stages and driver applications. Lead-free APPLICATIONS


    Original     		PDF BC846/847/848 15kHz. OT-23 BC846A/B BC847A/B/C BC848A/B/C BC846 BC846 TRANSISTOR 1g sot23 npn BC847 transistor 1f sot-23 BC847 sot package sot-23 transistor bc846 MARKING bc847 SOT-23 transistor marking pb 6 sot-23 1g sot23 transistor marking code SOT-23

    bc848a

    Abstract: bc848 BC846B 1B marking transistor BC847C bc846 transistor 1f sot-23 BC847A TRANSISTOR 1g sot23 npn bc847
    Text: BC846A,B BC847A,B,C BC848A,B,C SOT-23 Transistor NPN 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features — Ideally suited for automatic insertion — For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF BC846A BC847A BC848A OT-23 OT-23 BC846 BC847 BC848 bc848 BC846B 1B marking transistor BC847C transistor 1f sot-23 TRANSISTOR 1g sot23 npn

    LBC846BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G S-LBC846ALT1G AEC-Q101 LBC846 LBC847, LBC850 LBC848, LBC849 LBC846BLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    LBC850BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G S-LBC846ALT1G AEC-Q101 LBC846 LBC847, LBC850 LBC848, LBC849 LBC850BLT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849

    NDS351AN

    Abstract: No abstract text available
    Text: April 1997 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS351AN OT-23 NDS351AN

    NDS351AN

    Abstract: No abstract text available
    Text: N July 1996 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS351AN OT-23 NDS351AN

    BC850 SOT23

    Abstract: No abstract text available
    Text: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C


    OCR Scan     		PDF BC846A-Z1A BC846B-1B BC847A-Z1E BC847B-1F BC847C-1GZ BC848A-1JZ BC848B-1K BC848C-Z1L BC849B-2B BC849C-2C BC850 SOT23