Untitled
Abstract: No abstract text available
Text: User's Guide SBOU027B – October 2004 – Revised April 2006 DEM-OPA-SOT-1B User's Guide 1 Description The DEM-OPA-SOT-1B demonstration fixture is a noninverting configuration, unpopulated printed circuit board PCB for single op amps in SOT23 packages. This board has been optimized to minimize
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SBOU027B
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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Self-Oscillating Flyback Converters
Abstract: Rubycon photoflash capacitors Rubycon photoflash battery charging circuit using scr scr battery charger circuit diagram PA0367 Rubycon photoflash capacitors 300v light bulb battery charger circuit 650uF T-2112
Text: DESIGN FEATURES LT3420 Charges Photoflash Capacitors Quickly and Efficiently While Using by Albert Wu Minimal Board Space Introduction VOUT 50V/DIV VCHARGE 5V/DIV VBAT = 5V 1s/DIV 3420 F01b Figure 1b. Charging waveform Linear Technology Magazine • May 2002
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LT3420
LT3420
MSOP-10
Self-Oscillating Flyback Converters
Rubycon photoflash capacitors
Rubycon photoflash
battery charging circuit using scr
scr battery charger circuit diagram
PA0367
Rubycon photoflash capacitors 300v
light bulb battery charger circuit
650uF
T-2112
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H
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OT-23
BC846
BC847
BC848
BC846
BC846A
BC846B
BC847A
BC847B
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MMBT2222
Abstract: No abstract text available
Text: MMBT2222 MMBT2222 NPN General Purpose Amplifier • Sourced from process 19. C E B SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 30 Units V VCBO VEBO Collector-Base Voltage
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MMBT2222
OT-23
MMBT2222
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Untitled
Abstract: No abstract text available
Text: MMBT2222 MMBT2222 NPN General Purpose Amplifier • Sourced from process 19. G S D SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Ratings 30 Units V VCBO VEBO Collector-Base Voltage
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MMBT2222
OT-23
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aahb
Abstract: SOT23-6 AAHB adnu MAX6509 MAX6509CAUK-T MAX6509HAUK-T MAX6510 MAX6510CAUT-T MAX6510HAUT-T 1B SOT23-6
Text: 19-1617; Rev 1b; 9/00 Resistor-Programmable SOT Temperature Switches _Features ♦ ±0.5°C Threshold Accuracy ♦ ±4.7°C max Threshold Accuracy (-40°C to +125°C) ♦ Temperature Threshold Set by a 1% External Resistor ♦ Set-Hot or Set-Cold Option
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MAX6509CAUK-T
OT23-5
MAX6509HAUK-T
MAX6509/MAX6510
aahb
SOT23-6 AAHB
adnu
MAX6509
MAX6509CAUK-T
MAX6509HAUK-T
MAX6510
MAX6510CAUT-T
MAX6510HAUT-T
1B SOT23-6
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AAHB
Abstract: SOT23-6 AAHB "aahb" "window detector" adnu MAX6509 MAX6509CAUK-T MAX6509HAUK-T MAX6510 MAX6510CAUT-T
Text: 19-1617; Rev 1b; 9/00 Resistor-Programmable SOT Temperature Switches _Features ♦ ±0.5°C Threshold Accuracy ♦ ±4.7°C max Threshold Accuracy (-40°C to +125°C) ♦ Temperature Threshold Set by a 1% External Resistor ♦ Set-Hot or Set-Cold Option
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MAX6509CAUK-T
OT23-5
MAX6509HAUK-T
MAX6509/MAX6510
AAHB
SOT23-6 AAHB
"aahb"
"window detector"
adnu
MAX6509
MAX6509CAUK-T
MAX6509HAUK-T
MAX6510
MAX6510CAUT-T
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SLG8SP512T
Abstract: ecs g41 MOTHERBOARD CIRCUIT diagram g995 nvidia MXM PC8769L Model c4106 ISL6236 ISL6251 quanta fds8884
Text: 5 MODEL: D 4 3 2 1 REV: CHANGE LIST: 1A FIRST RELEASE MODEL : Z01 MB 1B PAGE02. PAGE03. PAGE03. PAGE05. PAGE06. PAGE08. PAGE11. PAGE12. PAGE13. PAGE15. PAGE16. PAGE18. PAGE20. PAGE21. PAGE22. PAGE23. PAGE24. PAGE25. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1.
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PAGE02.
PAGE03.
PAGE05.
PAGE06.
PAGE08.
PAGE11.
PAGE12.
PAGE13.
PAGE15.
SLG8SP512T
ecs g41 MOTHERBOARD CIRCUIT diagram
g995
nvidia MXM
PC8769L
Model c4106
ISL6236
ISL6251
quanta
fds8884
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ISL6236
Abstract: ISL6251 SLG8SP512T NB82801HBM quanta 3U22C intel G41 MOTHERBOARD crb PQ19 Socket AM2 GST5009LF
Text: 5 MODEL: D 4 3 2 1 REV: CHANGE LIST: 1A FIRST RELEASE MODEL : Z01 MB 1B PAGE02. PAGE03. PAGE03. PAGE05. PAGE06. PAGE08. PAGE11. PAGE12. PAGE13. PAGE15. PAGE16. PAGE18. PAGE20. PAGE21. PAGE22. PAGE23. PAGE24. PAGE25. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1.
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PAGE02.
PAGE03.
PAGE05.
PAGE06.
PAGE08.
PAGE11.
PAGE12.
PAGE13.
PAGE15.
ISL6236
ISL6251
SLG8SP512T
NB82801HBM
quanta
3U22C
intel G41 MOTHERBOARD crb
PQ19
Socket AM2
GST5009LF
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FAIRCHILD SOT-23 MARK 1a
Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.
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BC847A
BC847B
BC847C
OT-23
BC846A
BC846B
BC847A
BC847B
BC846A
FAIRCHILD SOT-23 MARK 1a
BC846 SOT23
NPN sot23 mark NF
847C
BC846
BC847
fAIRCHILD BC847b
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846a
Abstract: BC847B, BC847C fAIRCHILD BC847b BC846B
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 mA to 50 mA.
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BC846A
BC846B
BC847A
BC847B
BC847C
BC846B
846a
BC847B, BC847C
fAIRCHILD BC847b
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bc847b mark
Abstract: BC847b fAIRCHILD 847C BC846 BC846A BC846B BC847 BC847A BC847B BC847C
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.
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BC847A
BC847B
BC847C
OT-23
BC846A
BC846B
BC847A
BC847B
BC846A
bc847b mark
BC847b fAIRCHILD
847C
BC846
BC847
BC847C
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1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5
Abstract: step up DC DC converter out 9V dc to dc step up converter from 1.2v to 4.5v 2SD1628G MA721 RB111C RN5RK301A RN5RK301B RN5RK302A RN5RK501A
Text: VFM STEP-UP DC/DC CONVERTER RN5RKx× 1A /×× 1B/×× 2A SERIES APPLICATION MANUAL ELECTRONIC DEVICES DIVISION NO. EA-045-9803 NOTICE 1. The products and the product specifications described in this application manual are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to
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EA-045-9803
OT-23-5
1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5
step up DC DC converter out 9V
dc to dc step up converter from 1.2v to 4.5v
2SD1628G
MA721
RB111C
RN5RK301A
RN5RK301B
RN5RK302A
RN5RK501A
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PN2222A
Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
Text: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
PN2222A
PN2222
MMPQ2222
MMBT2222A
NMT2222
PZT2222A
SOIC-16
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IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
IC 7403
MMPQ2222
PZT2222A
SOIC-16
MMBT2222A
NMT2222
PN2222A
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FAIRCHILD SOT-223 MARK
Abstract: No abstract text available
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
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PN2222A
MMBT2222A
MMPQ2222
NMT2222
PZT2222A
PN2222A
MMBT2222A
OT-23
OT-223
FAIRCHILD SOT-223 MARK
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Untitled
Abstract: No abstract text available
Text: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23
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FDN5630
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smd code marking LF sot23
Abstract: smd diode marking A3 sot23
Text: Philips Semiconductors Product specification Schottky barrier double diodes BAS40 series PINNING SOT23 (see Fig. 1a) FEATURES • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig. 1b) BAS40-04 (see Fig. 1c) BAS40-05 (see Fig. 1d)
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BAS40
BAS40
BAS40-04
BAS40-05
BAS40-06
OT143B
T143B
smd code marking LF sot23
smd diode marking A3 sot23
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B 660 TG
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS
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BC847
BC849
BC846
BC848
BC850
BC848B
BC846A
BC846B
BC848C
BC849B
B 660 TG
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BC850 SOT23
Abstract: No abstract text available
Text: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C
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BC846A-Z1A
BC846B-1B
BC847A-Z1E
BC847B-1F
BC847C-1GZ
BC848A-1JZ
BC848B-1K
BC848C-Z1L
BC849B-2B
BC849C-2C
BC850 SOT23
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S EMICONDUCTOR IN C ' BCW69 D Q 0D 75 1b 3 | PNP EPITAXIAL SILICON TRANSISTOR c r -g r i? GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic . Collector-Emitfer Voltage Emitter-Base Voltage : Collector Current I C ollector Dissipation
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BCW69
OT-23
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K 3115
Abstract: transistor k30 KSC3125 KSC388 PC G 3115 samsung tv A12W k20a samsung tv test FC
Text: SAMSUNG SEMICONDUCTOR INC KSC3125 14E D J ? cl b m 4 a OOO^^S 1 NPN EPITAXIAL SILICON TRANSISTOR T-31-1B TV FINAL PICTURE AMPLIFIER APPLICATION SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Cottector-Emitter Voltage Emitter-Base Voltage
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KSC3125
T-31-15
KSC388
OT-23
K 3115
transistor k30
PC G 3115
samsung tv
A12W
k20a
samsung tv test FC
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Untitled
Abstract: No abstract text available
Text: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
NMT2222
SOIC-16
PN2222A
MMBT2222A
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