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    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    marking 1am

    Abstract: transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 MMBT3906 1AM 6 1aM sot-23 transistor
    Text: MMBT3904 Pb 0.2 Watts NPN Plastic-Encapsulate Transistors RoHS COMPLIANCE SOT-23 Features — As complementary type, the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction — Marking: 1AM Dimensions in inches and millimeters Maximum Ratings


    Original     		PDF MMBT3904 OT-23 MMBT3906 100mA 100MHz MMBT3904) marking 1am transistor 1am transistor marking 1am 1AM transistor 1AM marking transistor 1AM Y MMBT3904 1AM 6 1aM sot-23 transistor

    1AM marking transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 OT-23 MMBT3906 100mA 100MHz 1AM marking transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE


    Original     		PDF OT-23 MMBT3904 MMBT3906 100mA 100MHz 10mAdc

    sot23 marking 1AM

    Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
    Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — As complementary type the PNP transistor MMBT3906 is recommended — Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MMBT3904 OT-23 OT-23 MMBT3906 100mA 100MHz 10mAdc sot23 marking 1AM MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am

    transistor marking 1am

    Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT3904 MMBT3906 -55ENT transistor marking 1am transistor 1am MMBT3904 MMBT3904 jiangsu 1AM F

    k4070

    Abstract: MMBT3904
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1AM B E SOT-23


    Original     		PDF MMBT3904 OT-23 350mWatts OT-23 30Vdc, IC/10 k4070 MMBT3904

    transistor 1am

    Abstract: 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23

    1AM c

    Abstract: 1AM marking transistor
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, 1AM c 1AM marking transistor

    transistor 1am

    Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am

    1am marking sot-23

    Abstract: 1AM marking transistor
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 0.080 (2.04) 0.070 (1.78)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1am marking sot-23 1AM marking transistor

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am

    MMBT3904-HF

    Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02 OT-23 transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02

    1AM transistor

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) Collector 3 0.006(0.15)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1AM transistor

    1AMY

    Abstract: marking code 1AM 1AM marking sot23 1am sot 23 marking code 1AM
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • x x • x Capable of 350mWatts of Power Dissipation and 200mA Ic. Operating and Storage Junction Temperatures: -55ć to 150ć


    Original     		PDF MMBT3904 350mWatts 200mA OT-23 OT-23 30Vdc, 1AMY marking code 1AM 1AM marking sot23 1am sot 23 marking code 1AM

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • x x • • • x x x Capable of 350mWatts of Power Dissipation and 200mA Ic. Operating and Storage Junction Temperatures: -55ć to 150ć


    Original     		PDF MMBT3904 350mWatts 200mA OT-23 OT-23

    1AMY

    Abstract: marking code 1AM sot 23 marking code 1AM 1am sot-23 code 1am
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • x x • • • x x x Capable of 350mWatts of Power Dissipation and 200mA Ic. Operating and Storage Junction Temperatures: -55ć to 150ć


    Original     		PDF MMBT3904 350mWatts 200mA OT-23 OT-23 1AMY marking code 1AM sot 23 marking code 1AM 1am sot-23 code 1am

    sot 23 marking code 1AM

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features x Halogen free available upon request by adding suffix "-HF" • Capable of 350mWatts of Power Dissipation and 200mA Ic.


    Original     		PDF MMBT3904 350mWatts 200mA OT-23 OT-23 sot 23 marking code 1AM

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904 TRANSISTOR NPN FEATURES z As complementary type, the PNP transistor MMBT3906 is Recommended z Epitaxial planar die construction 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		PDF OT-23 OT-23 MMBT3904 MMBT3906 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1TRANSISTOR NPN FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.2 W(Tamb=25℃) A Collector-base voltage V(BR)CBO: V 60 Operating and storage junction temperature range


    Original     		PDF OT-23 MMBT3904LT1TRANSISTOR 100MHz MMBT3904LT1 10mAdc,

    marking code WM sot23

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features x Halogen free available upon request by adding suffix "-HF" • Capable of 350mWatts of Power Dissipation and 200mA Ic.


    Original     		PDF MMBT3904 350mWatts 200mA OT-23 OT-23 marking code WM sot23

    marking code 1AM

    Abstract: 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original     		PDF MMBT3904LT1 marking code 1AM 1am transistor MMBT3904LT3G equivalent of 1AM transistor marking 1am

    1AM marking transistor

    Abstract: transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking MMBT3904LT1 1AM transistor sot-23 Marking 1am
    Text: @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF MMBT3904LT1 OT-23 OT-23 10mAdc, 10mAdc 100MHz MMBT3904LT1 1AM marking transistor transistor 1am transistor marking 1am MARKING 1AM sot23 marking 1AM MMBT3904LT1 1AM 1AM marking 1AM transistor sot-23 Marking 1am