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    1AM E MARKING TRANSISTOR Search Results

    1AM E MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1AM E MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1am

    Abstract: 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM transistor 1AM c 1aM sot-23 transistor 1AM sot 23 1AM MMBT3904 1AM+SOT-23

    1AM c

    Abstract: 1AM marking transistor
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, 1AM c 1AM marking transistor

    transistor 1am

    Abstract: 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am
    Text: MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3904 300mW, OT-23 MIL-STD-202, transistor 1am 1AM marking transistor 1AM transistor transistor marking 1am 1AM marking transistor marking code 1am sot23 marking 1AM sot-23 Marking 1am 1AM F marking code 1am

    1am marking sot-23

    Abstract: 1AM marking transistor
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 0.080 (2.04) 0.070 (1.78)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1am marking sot-23 1AM marking transistor

    LMBT3908LT1G

    Abstract: 1AM 6 1AM c
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a • Pb−Free Lead Finish S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF AEC-Q101 LMBT3908LT1G S-LMBT3908LT1G LMBT3908LT3G S-LMBT3908LT3G 3000/Tape 10000/Tape LMBT3908LT1G 1AM 6 1AM c

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am

    MMBT3904-HF

    Abstract: transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02 OT-23 transistor 1am marking code SS SOT23 transistor 1AM marking transistor transistor marking 1am 1aM sot-23 transistor 1AM sot 23 transistor marking code 1am SS TRANSISTOR IN SOT 23 PACKAGING

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3904-HF NPN RoHS Device Halogen Free SOT-23 Features 0.118(3.00) -Epitaxial planar die construction 0.110(2.80) 3 -As complementary type, the PNP 0.055(1.40) transistor MMBT3904-HF is recommended 0.047(1.20) 1 2 0.006(0.15)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-JTR02

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)


    Original     		PDF MMBT3904-HF OT-23 MMBT3904-HF QW-HTR02 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD MARKING CODE 1am SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor

    1AM transistor

    Abstract: No abstract text available
    Text: General Purpose Transistor MMBT3904-G NPN RoHS Device Features SOT-23 -Epitaxial planar die construction 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) Collector 3 0.006(0.15)


    Original     		PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 1AM transistor

    1AM marking transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


    Original     		PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 1AM marking transistor

    1AM MMBT3904

    Abstract: transistors 1am transistor 1am
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ


    Original     		PDF OT-23 MMBT3904 MMBT3906 OT-23 1AM MMBT3904 transistors 1am transistor 1am

    LMBT3904LT1G

    Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


    Original     		PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 LMBT3904LT1G equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT3904LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR W（Tamb=25℃） ２．４ １．３ Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃


    Original     		PDF OT-23 MMBT3904LT1 MMBT3904LT1 100MHz 037TPY 950TPY 550REF 022REF

    mmbt3904 complementary

    Abstract: No abstract text available
    Text: MMBT3904 MMBT3904 Surface mount general purpose Si-epitaxial transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage NPN NPN Version 2005-11-07 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm] 1=B


    Original     		PDF MMBT3904 OT-23 O-236) UL94V-0 MMBT3906 mmbt3904 complementary

    K1N TRANSISTOR

    Abstract: R1A SURFACE MOUNT TRANSISTOR MMBT3904 MMBT3906 transistor sot23 1am
    Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D


    Original     		PDF MMBT3904 MMBT3906) OT-23 OT-23, MIL-STD-202, 100mA, 300ms, DS30036 K1N TRANSISTOR R1A SURFACE MOUNT TRANSISTOR MMBT3904 MMBT3906 transistor sot23 1am

    MMBT3904-1AM

    Abstract: mmbt3904 complementary MMBT3906 TP MMBT3904 MMBT3906
    Text: MMBT3904 MMBT3904 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-10-17 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1


    Original     		PDF MMBT3904 OT-23 O-236) UL94V-0 MMBT3906 MMBT3904-1AM mmbt3904 complementary MMBT3906 TP MMBT3904 MMBT3906

    sot23 marking 1AM

    Abstract: sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor
    Text: BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBT3904 Pb Lead-free MMBT3906 . z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V.


    Original     		PDF MMBT3904 MMBT3906) 200mA. OT-23 BL/SSSTC061 sot23 marking 1AM sot 23 marking code 1AM MMBT3904 transistor 1am sot-23 Marking 1am 1am sot-23 1AM marking transistor MV TRANSISTOR SOT23 1aM sot-23 transistor 1AM transistor

    marking K1N

    Abstract: transistor 1am MMBT3904 1AM F 1AM marking transistor
    Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 A Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D


    Original     		PDF MMBT3904 MMBT3906) OT-23 OT-23, MIL-STD-202, 100MHz 100mA, 300ms, DS30036 marking K1N transistor 1am MMBT3904 1AM F 1AM marking transistor

    smd 1AM

    Abstract: 1AM SOT-23 1am smd MARKING 1AM SOT-23 MMBT3904 NPN bipolar junction transistors max hfe 2000 K4070
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number MMBT3904 product family SOT-23 Plastic-Encapsulate Biploar Transistors


    Original     		PDF MMBT3904 OT-23 200mA 350mW 300MHz 10mAdc, 10mAdc smd 1AM 1AM SOT-23 1am smd MARKING 1AM SOT-23 MMBT3904 NPN bipolar junction transistors max hfe 2000 K4070

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 MMBT3904 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-10-17 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1


    Original     		PDF MMBT3904 OT-23 O-236) UL94V-0 MMBT3906

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a LMBT3904LT1G S-LMBT3904LT1G Pb−Free Lead Finish • • We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF LMBT3904LT1G S-LMBT3904LT1G AEC-Q101 LMBT3904LT3G S-LMBT3904LT3G 3000/Tape 10000/Tape LMBT3904LT1G

    R1A SURFACE MOUNT TRANSISTOR

    Abstract: transistor marking 1am R1A Marking npn marking 1am MMBT3904 MMBT3906 K1N TRANSISTOR transistor sot23 1am FX-300
    Text: MMBT3904 ÏR A N S Y S ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37


    OCR Scan     		PDF MMBT3904 MMBT3906) OT-23, MIL-STD-202, OT-23 MMBT3904 100MHz R1A SURFACE MOUNT TRANSISTOR transistor marking 1am R1A Marking npn marking 1am MMBT3906 K1N TRANSISTOR transistor sot23 1am FX-300

    marking S3 amplifier

    Abstract: MS6075B800Z
    Text: I I N AMER P H I L I P S / D I S C R E T E GtE D • ^^53^31 X MAINTENANCE TYPE | ' OOlSObS 4 MS6075BB00Z T -33-/ir PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in m ilitary and professional applications. It operates only in


    OCR Scan     		PDF