Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1A1– 1A7 1A 1A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1A1 1A2 1A3 1A4 50 100 200 400 1A5 1A6 1A7 600 800 1000 Maximum Forward Peak Surge Current @
|
Original
|
PDF
|
DO-41
DO-15
DO-201AD
26mm/TYPE
52mm/TYPE
DO-41
|
R-1 PACKAGE
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1A1– 1A7 1A 1A GENERAL DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV I O@ T L V PK 1A1 1A2 1A3 1A4 1A5 1A6 1A7 50 100 200 400 600 800 1000 Maximum Forward Peak Surge Current @
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 1A1 thru 1A7 Pb 1A1 thru 1A7 Pb Free Plating Product 1.0 Ampere R-1 Package Silicon Diode R-1 Unit: inch mm Features .025(.64) .787(20.0)MIN. • High reliability • Low leakage • Low forward voltage drop .138(3.5) .787(20.0)MIN. Mechanical Data .114(2.9)
|
Original
|
PDF
|
25oCambient
|
marking 1A7 SOT-23
Abstract: No abstract text available
Text: Formosa MS Axial Leaded General Purpose Rectifiers 1A1 THRU 1A7 List List. 1 Package outline. 2
|
Original
|
PDF
|
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
METHOD-1021
marking 1A7 SOT-23
|
Untitled
Abstract: No abstract text available
Text: Formosa MS Silicon Rectifier 1A1 THRU 1A7 List List. 1 Package outline. 2 Features. 2
|
Original
|
PDF
|
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
|
50V-1000V
Abstract: No abstract text available
Text: Formosa MS Silicon Rectifier 1A1 THRU 1A7 List List. 1 Package outline. 2 Features. 2
|
Original
|
PDF
|
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
50V-1000V
|
Untitled
Abstract: No abstract text available
Text: Formosa MS Silicon Rectifier 1A1 THRU 1A7 List List. 1 Package outline. 2 Features. 2
|
Original
|
PDF
|
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
METHOD-1021
METHOD-1031
|
Untitled
Abstract: No abstract text available
Text: Formosa MS Axial Leaded General Purpose Rectifiers 1A1 THRU 1A7 List List. 1 Package outline. 2
|
Original
|
PDF
|
MIL-STD-750D
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1021
METHOD-1031
JESD22-A102
|
diode 1a4
Abstract: RS-296-E diode 1a7 diode case R-1
Text: 1A1 – 1A7 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: R-1, Molded Plastic
|
Original
|
PDF
|
MIL-STD-202,
diode 1a4
RS-296-E
diode 1a7
diode case R-1
|
A-405
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1Feature 1A1 thru 1A7 * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage * High forward surge capability * Diffused junction
|
Original
|
PDF
|
MIL-STD-750,
DO-201AD
DO-41
DO-15
26/tape
DO-201AD
52/tape
52/tape#
A-405
|
Untitled
Abstract: No abstract text available
Text: 1A1 ~ 1A7 SILICON RECTIFIER DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.95 (2.42) High current capability High reliability Low reverse current Low forward voltage drop 0.138 (3.5) 0.114 (2.9) 1.00 (25.4)
|
Original
|
PDF
|
UL94V-O
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: 1A1 ~ 1A7 SILICON RECTIFIER DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.095 (2.42) High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 0.138 (3.5) 0.114 (2.9)
|
Original
|
PDF
|
UL94V-O
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: 1A1 ~ 1A7 SILICON RECTIFIER DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.95 (2.42) High current capability High reliability Low reverse current Low forward voltage drop 0.138 (3.5) 0.114 (2.9) 1.00 (25.4)
|
Original
|
PDF
|
UL94V-O
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 1A Rectifier Diodes 1A7 SOD-123 Unit: mm • Features ● Low Leakage Current ● Glass Passivated Junction ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Peak Repetitive Reverse Voltage
|
Original
|
PDF
|
|
|
|
Untitled
Abstract: No abstract text available
Text: 1A1 – 1A7 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: R-1, Molded Plastic
|
Original
|
PDF
|
MIL-STD-202,
|
Untitled
Abstract: No abstract text available
Text: 1A7 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.35 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.0 @Temp. (øC) (Test Condition)25’
|
Original
|
PDF
|
Current50u
|
Untitled
Abstract: No abstract text available
Text: 1A1 – 1A7 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data C Case: R-1, Molded Plastic
|
Original
|
PDF
|
MIL-STD-202,
|
2CL25
Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A
|
Original
|
PDF
|
LL4148
500mA
1N4148B/P
LL4001
1N4001
EM516
1N5391
1N5399
1N5400
1000Ifm
2CL25
2CL77
2CL91
2CL24
2CL70
1A7 Zener
SMD LL4001
BA151
HVP320
2CL75
|
Untitled
Abstract: No abstract text available
Text: SN74CB3Q16210 20ĆBIT FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE HIGHĆBANDWIDTH BUS SWITCH SCDS151A − OCTOBER 2003 − REVISED NOVEMBER 2003 D Member of the Texas Instruments D D D D D D D D D D D D D D D NC 1A1 1A2 1A3 1A4 1A5 1A6 GND 1A7 1A8 1A9 1A10 2A1
|
Original
|
PDF
|
SN74CB3Q16210
20BIT
SCDS151A
|
Untitled
Abstract: No abstract text available
Text: SN74CB3Q16211 24ĆBIT FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE HIGHĆBANDWIDTH BUS SWITCH SCDS152A − OCTOBER 2003 − REVISED NOVEMBER 2003 D Member of the Texas Instruments D D D D D D D D D D D D D D D NC 1A1 1A2 1A3 1A4 1A5 1A6 GND 1A7 1A8 1A9 1A10 1A11
|
Original
|
PDF
|
SN74CB3Q16211
24BIT
SCDS152A
|
Untitled
Abstract: No abstract text available
Text: SN74CB3T16210 20ĆBIT FET BUS SWITCH 2.5ĆV/3.3ĆV LOWĆVOLTAGE BUS SWITCH WITH 5ĆVĆTOLERANT LEVEL SHIFTER SCDS156 − OCTOBER 2003 D Member of the Texas Instruments D D D D D D D D D D D D D D NC 1A1 1A2 1A3 1A4 1A5 1A6 GND 1A7 1A8 1A9 1A10 2A1 2A2 VCC
|
Original
|
PDF
|
SN74CB3T16210
20BIT
SCDS156
|
FBD25
Abstract: hesd 50 FBD15 MA6 rs232 driver jack p4 2.1mm JP21-JP24 ColdFire v5 nc10 samsung EVCC12 qd33
Text: A B C 7 18 31 42 VCC VCC VCC VCC GND GND GND GND 28 34 39 45 GND GND GND GND 4 10 15 21 +3.3 4x 4.7K 1 PP[0:7] RP6 7 5 3 1 7 5 3 1 8 6 4 2 8 6 4 2 7 18 31 42 28 34 39 45 4x 4.7K 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1A8 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8 1DIR 1OE 2OE 2DIR
|
Original
|
PDF
|
\SPS2000\Schematic
FBD25
hesd 50
FBD15
MA6 rs232 driver
jack p4 2.1mm
JP21-JP24
ColdFire v5
nc10 samsung
EVCC12
qd33
|
SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
|
Original
|
PDF
|
SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
|
Untitled
Abstract: No abstract text available
Text: ADVANCFD POWER TECHNOLOGY 4TE 0257101 D 0 0 0 0 5 *1 0 ADVANCED P o w er t s a - is Te c h n o lo g y QD 4 - OS(4) IAVP 117 - APT60M90BFN 600V 63.0A 0.090 i APT55M90BFN 550V 63.0A 0.090 1a7 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFElfS
|
OCR Scan
|
PDF
|
APT60M90BFN
APT55M90BFN
eC830
MIL-STD-750
|
