1N5819
Abstract: 1N5817 1N5817 SJ diode 5819 5819 DIODE 1N5817 schottky diode symbol marking SJ 1N5819 sot-23 1N5817 diode sot-23 Marking sj
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO.,LTD SOT-23-3L Plastic-Encapsulate Diode www.haorm.cn 1N5817, 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current 1A IO : Collector-base voltage
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OT-23-3L
1N5817,
1N5819
OT-23-3L
1N5817:
1N5819:
1N5817
1N5819
1N5817
1N5817 SJ
diode 5819
5819 DIODE
1N5817 schottky diode symbol
marking SJ
1N5819 sot-23
1N5817 diode
sot-23 Marking sj
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sot-23 Marking sj
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40
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OT-23-3L
1N5817,
1N5819
OT-23-3L
1N5817:
1N5819:
1N5817
sot-23 Marking sj
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2510W
Abstract: RS1M diode
Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
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DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
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Diode 1N4946
Abstract: 1N4946
Text: 1N4942,1N4944,1N4946 thru 1N4948 Standard 1A F AST RECOVERY DIODE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5109, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV
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1N4942
1N4944
1N4946
1N4948
MIL-PRF-19500/359
MIL-PRF-19500/359
Diode 1N4946
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4942
Abstract: 1N4942
Text: 1N4942,1N4944,1N4946 thru 1N4948 Standard 1A F AST RECOVERY DIODE SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5109, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV
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1N4942
1N4944
1N4946
1N4948
MIL-PRF-19500/359
4942
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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1N6824-1
1N6824UR-1
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ultra low forward voltage schottky diode
Abstract: ultra low forward drop schottky ultra low reverse current schottky ultra low drop forward voltage diode axial schottky diode 100V 1A
Text: SENSITRON SEMICONDUCTOR 1N6824-1 1N6824UR-1 TECHNICAL DATA DATASHEET: 320, REV. D ULTRA LOW REVERSE LEAKAGE SCHOTTKY RECTIFIER Very Low Forward Voltage Drop 1A, 100 V Schottky Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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1N6824-1
1N6824UR-1
ultra low forward voltage schottky diode
ultra low forward drop schottky
ultra low reverse current schottky
ultra low drop forward voltage diode
axial schottky diode 100V 1A
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in5408 diode
Abstract: IN5408 diode IN5408 diode 1N5408 specifications diode IN 5402 3A IN5408 diode data sheet Diode IN 5404 DIODE 1N5402 3a Power diode SPECIFICATIONs DIODE 1N5400
Text: 1N5400 - IN5408 Power Diode 1A to 3A, Standard Axial Rectifiers Features: • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted
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1N5400
IN5408
in5408 diode
IN5408
diode IN5408
diode 1N5408 specifications
diode IN 5402 3A
IN5408 diode data sheet
Diode IN 5404
DIODE 1N5402 3a
Power diode SPECIFICATIONs
DIODE 1N5400
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CMZ5945B
Abstract: No abstract text available
Text: DEMO MANUAL DC2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC 4364 surge stopper with ideal diode in a 12V, 1A application. DC inputs of up to 80V and transients to 250V are limited to just 28.7V at the output. Sagging and reverse-polarity
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DC2027A
LTC4364HDE-1,
ISO-7637-2
dc2027af
CMZ5945B
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code d03 diode
Abstract: D0802 RB161L-40
Text: RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features * Compact power mold type * Ultra low VF VF = 0.35V typ. at 1A * VRM = 40V guaranteed Maximum Ratings and Electrical Characteristics
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RB161L-40
code d03 diode
D0802
RB161L-40
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D0802
Abstract: RB161L-40
Text: RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features * Compact power mold type * Ultra low VF VF = 0.35V typ. at 1A * VRM = 40V guaranteed Maximum Ratings and Electrical Characteristics
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RB161L-40
D0802
RB161L-40
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RB160L
Abstract: RB160L-60
Text: RB160L-60 Diodes Schottky barrier diode RB160L–60 !External dimensions Units : mm !Applications High frequency rectification For switching power supply. 4.5±0.2 !Features 1) Compact power mold (PMDS) 2) Low VF. (VF=0.55V Typ. at 1A) 3) High reliability
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RB160L-60
RB160L
OD-106
RB160L-604
RB160L-60
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RB160L-60
Abstract: RB160L ROHM DIODE WITH SOD CASE
Text: RB160L-60 Diodes Schottky barrier diode RB160L–60 !External dimensions Units : mm !Applications High frequency rectification For switching power supply. 4.5±0.2 !Features 1) Compact power mold (PMDS) 2) Low VF. (VF=0.55V Typ. at 1A) 3) High reliability
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RB160L-60
RB160L
OD-106
RB160L-604
RB160L-60
ROHM DIODE WITH SOD CASE
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AND8032
Abstract: MTP6N60M Christophe Basso Simulation of 3 phase common mode choke esh3 ESPC AND8032 PCB TL431 model SPICE lisn H.V capacitor 2100 vac
Text: AND8032/D Conducted EMI Filter Design for the NCP1200 Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE The Bulk Capacitor is a Natural Shield INTRODUCTION As Figure 1a depicts, an SMPS is supplied by a network made of a diode bridge rectifier and a bulk capacitor. Every
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AND8032/D
NCP1200
r14525
AND8032
AND8032
MTP6N60M
Christophe Basso
Simulation of 3 phase common mode choke
esh3
ESPC
AND8032 PCB
TL431 model SPICE
lisn
H.V capacitor 2100 vac
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s1nb
Abstract: S1NB60 45 S1NB60 029g S1NB60 15 S1NB80 diode smd marking BUF marking code 68 800V1A diode code 6_8
Text: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NB□ Unit : mm Weight : 0.29g （typ.） Package：1N（SMD） 800V 1A 6.8 ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ 級表示（例） Class Feature
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25unless
1mst10msTj
J534-1
s1nb
S1NB60 45
S1NB60
029g
S1NB60 15
S1NB80
diode smd marking BUF
marking code 68
800V1A
diode code 6_8
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Untitled
Abstract: No abstract text available
Text: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NB□ Unit : mm Weight : 0.29g （typ.） Package：1N（SMD） 800V 1A 6.8 ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ 級表示（例） Class Feature
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Untitled
Abstract: No abstract text available
Text: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g （typ.） Package：1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示（例）
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S1NBB80
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S1NBB80
Abstract: s1nbb 800V1A marking 6 bridge diode
Text: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g （typ.） Package：1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示（例）
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S1NBB80
25unless
1324mm
324mm2
2101mm2
101mm2
J534-1
S1NBB80
s1nbb
800V1A
marking 6 bridge diode
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s1nbb
Abstract: S1NBB80 diode code 6_8
Text: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NBB80 Unit : mm Weight : 0.29g （typ.） Package：1NA 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ • 端子間 3.4mm 級表示（例）
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S1NBB80
25unless
1mst10msTj
1324mm
324mm2
2101mm2
101mm2
s1nbb
S1NBB80
diode code 6_8
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s1nb
Abstract: S1NB60 45 S1NB80 S1NB60 S1NB20 BRIDGE DIP 1A s1nb6094 S1NB60 15
Text: デュアルインライン型 Bridge Diode Dual In-Line Package •外観図 OUTLINE S1NB□ Unit : mm Weight : 0.29g （typ.） Package：1N（SMD） 6.8 800V 1A ④ 品名略号 Type No. 特長 • 小型 DIP パッケージ 級表示（例） Class Feature
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25unless
1mst10msTj
S1NB20
S1NB60
S1NB80
s1nb
S1NB60 45
S1NB80
BRIDGE DIP 1A
s1nb6094
S1NB60 15
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marking 2U diode
Abstract: D1NL20U 1NL20U DIODE MARKING 2U L20U
Text: n - n x ^ -c r— K Super Fast Recovery Diode Axial Diode O U TLIN E D IM E N SIO N S D1NL20U Unit • mm Package I AX057 o 200V 1A hLO rn ±0.1 2 0 MIN •trr3 5 n s -2 0 m in -M - • 5 m m \d " j m «EPM f Marking
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D1NL20U
AX057
J515-5
marking 2U diode
D1NL20U
1NL20U
DIODE MARKING 2U
L20U
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n539
Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0
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1N4001
1N4002
N4003
1N4004
1N4005
1N400Ó
1N4007
1N5392
1N5393
1N5394
n539
6A10 DIODE
diode 2a05
FRI57
diode 6A10
Diode IN5398
diode k5 10-16
diode 1n5392
N5398
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smd kir
Abstract: DIODE MARKING 9Y smd code marking book DIODE SMD CODE MARKING LG smd diode code 1_b DG1J10A J532 smd diode schottky code marking 1A smd code marking vk YJ-7
Text: Schottky Barrier Diode Single Diode m tm DG1J10A 100V n • iiS'JviySMD Weight 0.011 g Typ 1A 3.5 1 U ltra -sm all S M D • fílR = 1 L o w Ir =100|j A m 100/l/A (?) CD r • i2j®sy=0.8mm • U nit-m m Package : G 1F Feature a OUTLINE 1 1J71 1 QD°
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DG1J10A
11J71
12-iiir
smd kir
DIODE MARKING 9Y
smd code marking book
DIODE SMD CODE MARKING LG
smd diode code 1_b
DG1J10A
J532
smd diode schottky code marking 1A
smd code marking vk
YJ-7
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marking 2U diode
Abstract: marking 2U 20 diode diode marking code 2U diode marking 2U marking code DIODE 2U diode 2u marking code marking 2U 40 diode 2U marking code diode
Text: Super Fast Recovery Diode Axial Diode W tm D1NL20U OUTLINE Package : AX057 U nit-m m W eight 0.19g Typ 200V 1A Feature UJ 02.6 • Low Noise • m s 'ix • trr= 3 5 n s • trr=35ns 0> -M - Main Use • Fly Wheel • ÍM .0 A J M 3 • Home A ppliance, Office Autom ation, Lighting
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D1NL20U
AX057
marking 2U diode
marking 2U 20 diode
diode marking code 2U
diode marking 2U
marking code DIODE 2U
diode 2u marking code
marking 2U 40 diode
2U marking code diode
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