1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15
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1SS391
SC-61
1SS391
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating
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1SS391
SC-61
1SS391
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Untitled
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating
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1SS391
SC-61
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Untitled
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM
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1SS391
SC-61
100mA
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1SS391
Abstract: No abstract text available
Text: 1SS391 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS391 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA
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1SS391
100mA
1SS391
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating
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1SS391
SC-61
1SS391
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA l Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM
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1SS391
SC-61
1SS391
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961001EAA2
Abstract: No abstract text available
Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15
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1SS391
SC-61
961001EAA2'
961001EAA2
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SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
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SCJ0004N
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
SCJ0004N
JDV2S71E
DF2S6.8UFS
015AZ3.3
1ss421
CMG07
CMZ24
CRS06
DF2S5.6SC
DF3S6.8ECT
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
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SSM3J307T
Abstract: SSM3J328R SSM3J334R
Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
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200-mA
BCE0030D
SSM3J307T
SSM3J328R
SSM3J334R
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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TPCA*8030
Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S
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TC7SZ126FU
SC-88A
OT-353
BCJ0052E
BCJ0052D
TPCA*8030
lm2804
TPCA*8036
2SK2033
TPC8037
Sj 88a diode
TPCA8028
TPC8A03
TC4W53FU
IC sj 4558
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CMZB220
Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード
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SCJ0004R
TPC6K01
HMG01
CRG02
CRG07
CRG03
CRG09
CMG05
CMG07
CMG02
CMZB220
CMS17
CES520
CRS20I40A
CRS10I30C
CUS10I40
CRS30I30A
CMZ24
CRS06
CRS10I30B
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HN4C06J
Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2
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CMG03
Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A
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SCE0004I
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
CMG03
1SS391
2fu smd transistor
DF2S6.8S
CMG07
TOSHIBA DIODE CATALOG
DSR520CT
toshiba SEMICONDUCTOR GENERAL CATALOG
CMF05
CRS01
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2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG02
O-220SM
CRG01
CRG04
CMG03
2fu smd transistor
2FK transistor
3FV 60 43
smd diode Lz zener
HN2S02JE
CMZ24
CRS01
DF2S6.2S
1SV101
1SV283B
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DF2S3.6SC
Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
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SCJ0004O
TPC6K01
HMG01
CRG02
CRG07
CRG03
CRG09
CMG05
CMG07
CMG02
DF2S3.6SC
CRH02
CRG09
CMG07
1SS416CT
CRG07
CMS19
CMZ24
HN2D01JE
JDV2S10FS
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SS391
SS391
SC-61
961001EAA2'
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marking Vf
Abstract: No abstract text available
Text: TOSHIBA 1SS391 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 <; <; 3 Q 1 LOW VOLTAGE HIGH SPEED SWITCHING Unit in mm +0.2 2 .9-0.3 • Low Forward Voltage : VF 2 = 0.23 V (Typ.) • Small Package : SC-61 @Ir = 5mA -e MAXIMUM RATINGS (Ta = 25°C)
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1SS391
SC-61
961001EAA2'
marking Vf
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SS391
Abstract: No abstract text available
Text: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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1SS391
SS391
SC-61
961001EAA2'
SS391
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1SS391
Abstract: No abstract text available
Text: 1SS391 TOSHIBA TO SHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • Low Forward Voltage Small Package Ip = 5mA : VF 2) = 0.23V (Typ.) : SC-61 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SS391
SC-61
961001EAA2'
1SS391
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