Marking s3
Abstract: smd transistor s3 1SS388
Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02
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1SS388
OD-523
07max
77max
Marking s3
smd transistor s3
1SS388
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S3 marking DIODE
Abstract: 1SS388 J-STD-020D TEMA
Text: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-523 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOD-523 Dim. MECHANICAL DATA • Case: SOD-523 Plastic
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1SS388
OD-523
OD-523
J-STD-020D
2002/95/EC
S3 marking DIODE
1SS388
J-STD-020D
TEMA
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1ss388
Abstract: marking 724 diode
Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 O Top View Marking Code: "O" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value
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1SS388
OD-523
OD-523
1ss388
marking 724 diode
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS388 Features • • • • • • • Halogen free available upon request by adding suffix "-HF" High speed switching diode
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1SS388
OD-523,
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1SS388GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 1SS388GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.1 Ampere APPLICATION * Low current rectification and high speed switching SC-79/SOD-523 FEATURE * Extremely small surface mounting type. SC-79/SOD-523 * Io=200mA guaranteed despite size
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1SS388GP
SC-79/SOD-523
SC-79/SOD-523)
200mA
200mA)
1SS388GP
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S3 marking DIODE
Abstract: smd diode code s3 SMD MARKING CODE A12 A12 smd smd code a12 diode IR 100 8K A12 diode Marking Code s3 diode Smd diode s3 marking A12
Text: 1SS388 150mW, SMD High Speed Switching Diode Small Signal Diode SOD-523 B Features C Fast switching device Trr<4.0nS A Surface device type mounting Moisture sensitivity level 1 D Matte Tin(Sn) lead finish Pb free version,RoHS compliant Green compound (Halogen free) with suffix "G" on
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1SS388
150mW,
OD-523
OD-523F
MIL-STD-202,
C/10s
S3 marking DIODE
smd diode code s3
SMD MARKING CODE A12
A12 smd
smd code a12
diode IR 100 8K
A12 diode
Marking Code s3 diode
Smd diode s3
marking A12
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Untitled
Abstract: No abstract text available
Text: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Turn-On Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability
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1SS388
OD-523
OD-523,
MIL-STD-202,
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1SS388
Abstract: No abstract text available
Text: 1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF 3 = 0.54V (typ.) l Low reverse current: IR = 5µA (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol
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1SS388
1SS388
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Untitled
Abstract: No abstract text available
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-523 Package Weight mg 2 Product Group Type No. RB751S-40 1SS389 1SS388 BAT54X RB520S-30 RB521S-30 1SS387 1SS400 1SS422 BAS16X NSD914X BAS516 BZX584C2V0 – BZX584C51
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OD-523
RB751S-40
1SS389
1SS388
BAT54X
RB520S-30
RB521S-30
1SS387
1SS400
1SS422
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Marking Code s3 diode
Abstract: S3 Package
Text: 1SS388 High Speed Switching Diode SOD-523 Features Low forward voltage. Low reverse current. Small package. Applications Dimensions in inches and millimeters High-speed switching in surface mounted circuits. Ordering Information Type No. Marking
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1SS388
OD-523
1SS388
Marking Code s3 diode
S3 Package
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1SS388
Abstract: No abstract text available
Text: 1SS388 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS388 ○ 超高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向特性が良い。 : VF 3 = 0.54V (標準)
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1SS388
100mA
1SS388
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marking 38
Abstract: No abstract text available
Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE SOD-523 FEATURES Unit:inch mm • Low forward voltage : V F(3)=0.54V(t\S.) • Low reverse current : I R=5µA(PD[.) • / 0.050(1.25) 0.045(1.15) •*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH
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1SS388
OD-523
OD-523
MIL-STD-750
RB500V-40
marking 38
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Untitled
Abstract: No abstract text available
Text: 1SS388 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-523 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOD-523 Dim. Min. Max. A 0.51 0.77 MECHANICAL DATA
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1SS388
OD-523
OD-523
J-STD-020D
2002/95/EC
20x20mm,
1SS388
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S3 marking DIODE
Abstract: Marking s3 diode BY 028
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS388 Features • • • • • High speed switching diode 45 Volts Switching Diode Surface mount package
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1SS388
OD-523,
MIL-STD-202,
OD-523
S3 marking DIODE
Marking s3
diode BY 028
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1ss388pt
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 1SS388PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.1 Ampere APPLICATION * Low current rectification and high speed switching SC-79/SOD-523 FEATURE * Extremely small surface mounting type. SC-79/SOD-523 * Io=200mA guaranteed despite size
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1SS388PT
SC-79/SOD-523
SC-79/SOD-523)
200mA
200mA)
1ss388pt
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1SS388
Abstract: No abstract text available
Text: 1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application Unit in mm Small package Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (typ.) Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage
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1SS388
1SS388
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diode sv 03
Abstract: 1SS388
Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (typ.) 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol
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1SS388
OD-523
OD-523
diode sv 03
1SS388
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diode sv 03
Abstract: 1SS388
Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (typ.) 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol
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1SS388
OD-523
OD-523
diode sv 03
1SS388
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS388 Features • • • • • • High speed switching diode 45 Volts Switching Diode Surface mount package
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1SS388
OD-523,
MIL-STD-202,
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1ss388
Abstract: S3 marking DIODE
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 High Speed SWITCHING Diodes SOD-523 + FEATURES z Small pacakage z Low forward voltage : VF3 = 0.54 typ z Low reverse current : IR = 5uA ( typ ) - MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃
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OD-523
1SS388
OD-523
1SS388
S3 marking DIODE
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1SS388
Abstract: No abstract text available
Text: 1SS388 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic
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PDF
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1SS388
1SS388
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS388 Features • • • • • • High speed switching diode 45 Volts Switching Diode Surface mount package
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PDF
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1SS388
OD-523,
MIL-STD-202,
OD-523
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Untitled
Abstract: No abstract text available
Text: 1SS388 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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PDF
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1SS388
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS388 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)
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1SS388
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