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    1SS29 Search Results

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    1SS29 Price and Stock

    Micro Commercial Components 1SS294-TP

    Interface
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    DigiKey 1SS294-TP Bulk 3,000
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    Toshiba America Electronic Components 1SS295(TE85L,F)

    DIODE ARRAY SCHOTTKY 4V SC59-3
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    1SS295(TE85L,F) Digi-Reel 1
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    1SS295(TE85L,F) Cut Tape 1
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    Mouser Electronics 1SS295(TE85L,F) 2,240
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    Verical 1SS295(TE85L,F) 3,000 281
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    1SS295(TE85L,F) 1,810 138
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    Quest Components 1SS295(TE85L,F) 7,112
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    Chip1Stop 1SS295(TE85L,F) Cut Tape 1,810
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    EBV Elektronik 1SS295(TE85L,F) 27 Weeks 3,000
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    JRH Electronics MTSW-150-11-S-S-290-RA

    VARIABLE HEIGHT PCB HEADER STRIP
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    DigiKey MTSW-150-11-S-S-290-RA Bulk 1
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    Samtec Inc MTSW-150-11-S-S-290-RA

    CONN HEADER R/A 50POS 2.54MM
    Free Sample
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    DigiKey MTSW-150-11-S-S-290-RA Bulk 1
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    Avnet Americas MTSW-150-11-S-S-290-RA Bulk 1
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    Newark MTSW-150-11-S-S-290-RA Bulk 1
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    Powell Electronics MTSW-150-11-S-S-290-RA 92 1
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    Sager MTSW-150-11-S-S-290-RA 140 1
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    Samtec Inc DWM-03-51-S-S-290

    Conn Board Stacker HDR 3 POS 1.27mm Solder ST Thru-Hole - Bulk (Alt: DWM-03-51-S-S-290)
    Free Sample
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    Master Electronics DWM-03-51-S-S-290
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    Find more 1SS29 price and stock on Findchips.com

    1SS29 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS29 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS29 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS290 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS290 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS290 ROHM 130mA Iout, 90V Vrrm Fast Recovery Rectifier Scan PDF
    1SS291 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS291 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS291 ROHM 120mA Iout, 55V Vrrm Fast Recovery Rectifier Scan PDF
    1SS292 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS292 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS292 ROHM 110mA Iout, 40V Vrrm Fast Recovery Rectifier Scan PDF
    1SS293 Toshiba DIODE SCHOTTKY DIODE 45V 0.1A 3(2-3J1A) Original PDF
    1SS293 Toshiba Diode - Silicon Epitaxial Schottoky Barrier Type Original PDF
    1SS293 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS293 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS293 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS293 Toshiba DIODE Scan PDF
    1SS294 EIC Semiconductor Schottky Barrier Diodes Original PDF
    1SS294 Kexin Low Voltage High Speed Switching Original PDF
    1SS294 Toshiba Japanese - Diodes Original PDF

    1SS29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5


    Original     		PDF 1SS294 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF 1SS294 236MOD 100mA

    NMR14

    Abstract: BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002
    Text: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K R9


    Original     		PDF XJ8C-0311 B3FS-1002 M24C32-WBN6 1SS294 22uF/16V B3F-1002 30MHz XG8T-1031 NMR14 BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS294 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。


    Original     		PDF 1SS294 SC-59 236MOD 100mA 1SS294

    1SS293

    Abstract: No abstract text available
    Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS293 SC-61 1SS293

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF 1SS294 SC-59 1SS294

    1SS294

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package : SC−59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS294 SC-59 O-236MOD 1SS294

    1SS295

    Abstract: No abstract text available
    Text: 1SS295 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS295 ○ UHF バンド受信ミキサ用 • 単位: mm 小型パッケージです。 • 順電圧偏差が小さい。 • 端子間容量偏差が小さい。 : ΔCT = 0.1 pF 最大


    Original     		PDF 1SS295 SC-59 1SS295

    TOSHIBA DIODE

    Abstract: 1SS294
    Text: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF 1SS294 SC-59 TOSHIBA DIODE 1SS294

    TOSHIBA DIODE

    Abstract: 1SS293
    Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package Maximum Ratings (Ta = 25°°C) Characteristic Symbol


    Original     		PDF 1SS293 TOSHIBA DIODE 1SS293

    transistor XM

    Abstract: marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech
    Text: 1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low reverse current • Low forward voltage 3 1 Absolute Maximum Ratings Ta = 25 OC Parameter Marking Code: "XM" SOT-23 Plastic Package 2 Symbol Value Unit


    Original     		PDF 1SS294 OT-23 transistor XM marking 724 diode diode marking code xm sot-23 marking code 1SS294 Semtech

    Untitled

    Abstract: No abstract text available
    Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low-Voltage High-Speed Switching z Low forward voltage: VF 3 = 0.54 V (typ.) z Low reverse current: IR = 5 A (max) Unit: mm z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS293 SC-61

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ÄVF = 10 mV Max 1 Small Delat total capacitance: ÄCT = 0.1pF(Max) 0.55 Small Delat forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 1SS295 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •


    OCR Scan     		PDF 1SS294 SS294 SC-59 O-236MOD SC-59

    ss295

    Abstract: No abstract text available
    Text: 1SS295 TO SHIBA TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr= 10mV Max. : ACT = 0.1pF(Max.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS295 SS295 ss295

    ss295

    Abstract: 1SS295 SS29
    Text: TOSHIBA 1SS295 TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) E +0.5 2.5-0.3


    OCR Scan     		PDF 1SS295 SC-59 ss295 1SS295 SS29

    Untitled

    Abstract: No abstract text available
    Text: Diode, switching, leaded 1SS290 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Dimensions U n its: mm CATHODE BAND «¿0.4±0.l Features • available in DO-34 package • part marking, see following table


    OCR Scan     		PDF 1SS290 DO-34 DQ15417 1SS290

    1ss212

    Abstract: 1SS291
    Text: ^ K /D io d es M H /D is c o n tin u e d Types List • JjIanS— Discontinued Types List ftH p “p Replacem ent ft# p Dp Replacement Type Replacement Type 1SS212 1SS254 1SS216 1SS135 TZ Series MTZ Series 1SS213 1SS136 1SS217 1SS290 DAP211 DAP208 1SS253 1SS214


    OCR Scan     		PDF 1SS212 1SS254 1SS216 1SS135 1SS213 1SS136 1SS217 1SS290 DAP211 DAP208 1ss212 1SS291

    1SS295

    Abstract: No abstract text available
    Text: 1SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm UHF B A N D M IXER APPLICATIONS. • • • + 0 .5 2 .5 - 0 .3 Small Package Small Delta Forward Voltage Small Delta Total Capacitance + 0 .2 5 1.5 - 0 . 15^ : AVp>= lOmV Max. : ACx = 0.1pF (Max.)


    OCR Scan     		PDF 1SS295 SC-59 100MHz 1SS295

    Untitled

    Abstract: No abstract text available
    Text: SILICO N EP IT A X IA L S C H O T T K Y B A R R IE R T Y P E DIODE -1SS295 UHF B A N D M IX E R A PPLIC A TIO N S. • • • U n it in m m Small Package Small Delta Forward Voltage Small Delta Total Capacitance : A V j'= lOmV Max. : ACx = 0.1pF (Max.) M A X IM U M R A T IN G S (Ta = 25°C)


    OCR Scan     		PDF -1SS295 1SS295

    Untitled

    Abstract: No abstract text available
    Text: 1SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5fuA (Max.) Small Package 0.55M A X CTl 1.27 1.27


    OCR Scan     		PDF 1SS293 SS293

    1SS291

    Abstract: 1SS292 ROHM 1SS292
    Text: 1SS290/1SS291 /1SS292 $ ' ' i ^ — K /D iodes - r — 's+ A V t^ V S » ^ A>4 1SS290/1SS291 /1 SS292 Silicon Epitaxial Planar Low-Leakage Switching Mini-Diodes 1 'h f 7 ^ 7 DSiSJi A • Ü / D i m e n s i o n s ( U n it : m m ) • t i V — K / ' i > K f e g y / C a t h o d e B a n d C o lo r


    OCR Scan     		PDF 1SS290/1SS291 /1SS292 1SS290 1SS291 1SS292 1SS292 ROHM 1SS292

    1SS294

    Abstract: No abstract text available
    Text: TOSHIBA 1SS294 TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59


    OCR Scan     		PDF 1SS294 SC-59 O-236MOD 1SS294

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TOSHIBA TOSHIBA DIODE 1SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. + 0.5 2 . 5 - 0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package : SC-5Ô + 0.25 1. 5 - 0.15


    OCR Scan     		PDF 1SS294 O-236MOD SC-59