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    1RFR9110 Search Results

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    FR9110

    Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
    Text: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210


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    1RFR9020 IRFR9022 FR9110 1RFR9111 IRFR9120 IRFR-247 IRFS150 O-247 IRFS151 FR91 Samsung D-PAK IRFR9121 IRFR9210 IRFR9212 PDF

    s276

    Abstract: fr9110 PLIC 9110
    Text: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)


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    IRFU9110, IRFR9110 -251A -200i 23e-14 74e-2 95e-3 30e-6 72e-10 45e-7) s276 fr9110 PLIC 9110 PDF

    IRFR9110

    Abstract: IRFU9110 AN-994 PN 1204 1RFR9110
    Text: PD-9.519E International S Rectifier IRFR9110 IRFU9110 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9110 Straight Lead (IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = - 1 0 0 V ^D S (on ) - 1


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    IRFR9110 IRFR9110) IRFU9110) IRFU9110 IRFR9110 IRFU9110 AN-994 PN 1204 1RFR9110 PDF

    pj 87 diode

    Abstract: diode pj 87 IRFU9110 AN-994 IRFR9110
    Text: PD-9.519E International 5 ü Rectifier IRFR9110 IRFU9110 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount {IRFR9110 Straight Lead IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = -100V


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    IRFR9110 1RFR9110) IRFU9110) IRFU9110 pj 87 diode diode pj 87 AN-994 PDF