GENERAL SEMICONDUCTOR MARKING RJ
Abstract: marking code RB
Text: RS2A thru RS2K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier Reverse Voltage 50 to 800V Forward Current 1.5A DO-214AA SMB Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout 0.185 MAX.
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DO-214AA
50mVp-p
19-Sep-03
GENERAL SEMICONDUCTOR MARKING RJ
marking code RB
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SB360
Abstract: SB320 SB330 SB340 SB350 88719
Text: SB320 thru SB360 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifier Reverse Voltage 20 to 60V Forward Current 3.0A DO-201AD Features 1.0 25.4 Min. • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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SB320
SB360
DO-201AD
DO-201AD
MIL-STD-750,
SB340
SB350
50mVp-p
SB360
SB330
SB340
SB350
88719
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Untitled
Abstract: No abstract text available
Text: TCMD1000 / TCMD4000 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, Single/Quad Channel, Half Pitch Mini-Flat Package Features • • • • • Low profile package half pitch AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF
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TCMD1000
TCMD4000
E76222
TCMD4000
D-74025
19-Sep-03
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139 CLL
Abstract: No abstract text available
Text: 139 CLL Vishay BCcomponents Aluminum Capacitors SMD Chip Long Life FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing. • Extended voltage and capacitance range. • SMD-version, fully moulded, insulated. • Flexible terminals, reflow and wave solderable.
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08-Apr-05
139 CLL
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Si4427BDY
Abstract: No abstract text available
Text: SPICE Device Model Si4427BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4427BDY
0-to-10V
19-Sep-03
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63221
Abstract: 139 CLL
Text: 139 CLL Vishay BCcomponents Aluminum Capacitors SMD Chip Long Life FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing. • Extended voltage and capacitance range. • SMD-version, fully moulded, insulated. • Flexible terminals, reflow and wave solderable.
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19-Sep-03
63221
139 CLL
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FEP6DT
Abstract: No abstract text available
Text: FEP6DT, FEPF6DT, FEPB6DT Series Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifiers Reverse Voltage 50 to 200V Forward Current 6.0A Reverse Recovery Time 35ns ITO-220AB FEPF6AT Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)
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ITO-220AB
O-220AB
50mVp-p
19-Sep-03
FEP6DT
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GENERAL SEMICONDUCTOR MARKING RJ
Abstract: "General Semiconductor" DO-214AB rj
Text: RS3A thru RS3K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier DO-214AB SMC Reverse Voltage 50 to 800V Forward Current 3.0A Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) Mounting Pad Layout 0.185 MAX.
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DO-214AB
DO-214AB
MIL-STD-750,
19-Sep-03
GENERAL SEMICONDUCTOR MARKING RJ
"General Semiconductor" DO-214AB rj
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27621
Abstract: 60286-1 roederstein capacitor mkp iec 60286-1
Text: Packaging Information Vishay Roederstein Axial Plastic Film Capacitors, Taping Specification according to IEC 60286-1 1. Capacitor. 2. Tape. 3. Paper between layers of components for protection. 4. Flange (3mm thick). 5. Reel. 6. Plastic hub. A. Inner spacing of tapes.
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19-Sep-03
27621
60286-1
roederstein capacitor mkp
iec 60286-1
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iec 60286-2
Abstract: Packing Quantities for Radial Capacitors in PCM 10 to 37.5mm
Text: Packaging Information Vishay Roederstein Radial Plastic Film Capacitors according to IEC 60286-2 PCM 10/15 ∆h P P2 H H1 W2 W1 W d W D0 P1 PCM 22.5 P0 F F1 PCM 27.5 P0 Hot Sealing Adhesive Tape P1 ITEM DIMENSIONS in millimeters SYMBOL PCM 10.0 PCM 15.0
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Si6983DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6983DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6983DQ
19-Sep-03
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Untitled
Abstract: No abstract text available
Text: 042/043 AHH-ELB Vishay BCcomponents Aluminum Capacitors Axial High Temperature High Voltage for E.L.B. FEATURES Fig.1 Component Outlines. 041-043 ASH standard 042/043 AHH-ELB 550 V/24 hours 042/043 AMH-ELB 550 V/24 hours 85 °C • Polarized aluminum electrolytic capacitors,
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EN130300
19-Sep-03
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595D
Abstract: BT106 293D C595D
Text: tantalum capacitors Key Benefits • 595D High-CV, conformal-coated tantalum capacitors now available in “S” case 33 µF at 6.3 V and “M” case (100 µF at 6.3 V) • Footprint compatible with “A” case and “B” case molded chip capacitors • Low ESR for “S” and “M” case packages
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178mm]
330mm]
535BAAC
19-Sep-03
595D
BT106
293D
C595D
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corona treatment circuit
Abstract: PE 1000 MKP IEC 974-1 IEC 60060-1 Capacitor x2, Y upc 1414 F1779 MKP 1842 Marking code E00 40kv capacitor
Text: F1779 Vishay Roederstein AC-Capacitors, Suppression Capacitors Class X2 AC 275V Code pos. 9 = 2 (MKP) Dimensions in mm REFERENCE STANDARDS: W Max. L Max. EN 60068-1, EN 132 400, 1994 IEC 60384-14/2, 1993; UL 1283, UL 1414 CSA 22.2 No. 8-M 86, CSA 22.2 No. 1-M 90
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F1779
25mm2/YV
19-Sep-03
corona treatment circuit
PE 1000 MKP
IEC 974-1
IEC 60060-1
Capacitor x2, Y
upc 1414
F1779
MKP 1842
Marking code E00
40kv capacitor
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS J LTR J2 r D DATE DWN APVD 19SEP03 TS KB DESCRIPTION FJAO—0541 —03 D n PC BOARED DIMENSION 7 u v NOTE O ^ IB ;
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FJAO--0541
19SEP03
ST58ij
B1115XIÍ
31MAR2000
18SEP2003
J029188
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS U N P U B U SH ED . COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - D IST LOC ALL RIGHTS RESERVED. R E V IS IO N S J LTR DATE DWN APVD 19SEP03 TS KB D ESCRIPTION J6 FJAO— 0 5 4 1 — 0 3 ^ 5 .5 5 ± 0 .3 _ 3 0 + 0 .5
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19SEP03
12PLC
31MAR2000
asakiEC\Autornotive\en32
a99--0
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Untitled
Abstract: No abstract text available
Text: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T - BY TYCO E L E C T R O N IC S P U B L I C A T IO N R IG H T S LOC RESERVED. D IS T R E V IS IO N S J C O R P O R A T IO N . LT R DATE DWN APVD 19 SEP 03 TS KB D E S C R IP T IO N
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31MAR2000
18SEP2003
FJ029188
otive\en32
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lcd pcb wiring
Abstract: wiring pcb lcd display
Text: Term inal CN1 No, Pin Nane 1 CSA 2 CSB 3 GND 4 VCC 5 VO 6 D /I *i 7 R/W 8 E 9 DB0 10 DB1 11 DB2 12 DB3 13 DB4 14 DB5 15 DB6 16 DB7 17 A 18 K 19 NC 20 VDUT in - CD 7 8 , 0 + 0.3 2,54 -68,0 ±o,3— 62,0— -P2,54x(20-1) =48,26- 13,0- CD 7, -1,6(PCB), 20 -Q
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CDM64
88pcs)
19-Sep-03
LM12864F
MK-000061a-l-l
27-Dec-02
lcd pcb wiring
wiring pcb lcd display
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Untitled
Abstract: No abstract text available
Text: 18SEP2003 9:45am FJ029188 S :\A M P -K o w asakiE C \A u to m o tive \e n 32 _ o uto m o tive\u.a 99 —018 7 \0 5 4 1 —0 3 \d w q \ c - 173866.dwq 2 1 LOC J REVISIONS DIST LTR DESCRIPTION H 1 DATE FJAO—0541 —03 DWN 1 9 SEP 0 3 APVD TS KB PC BOARED DIMENSION
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18SEP2003
FJ029188
FJAO--0541
B1115XIÍ
B1115
19SEP03
195EP03
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