PICTURE TUBE 59
Abstract: MR611 1610 tube 1-1903978-1 805 tube tube 805 PICTURE TUBE mr+504+diode
Text: 107-68653 Packaging Specification 19Oct09 Rev K UPM CONNECTOR 1. PURPOSE 目的 Define the packaging specification and packaging method of UPM. 订定 UPM 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 TYPE TYPE A Part Number Description
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19Oct09
X-292284-X
X-292286-X
X-292288-X
292289-X
124TUBE
97243-210cm)
QR-ME-030B
PICTURE TUBE 59
MR611
1610 tube
1-1903978-1
805 tube
tube 805
PICTURE TUBE
mr+504+diode
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Untitled
Abstract: No abstract text available
Text: SB520 thru SB560 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106
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SB520
SB560
22-B106
DO-201AD
2002/95/EC
2002/96/EC
DO-201AD
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: SB320 thru SB360 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation
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SB320
SB360
DO-201AD
22-B106
2002/95/EC
2002/96/EC
DO-201AD
2011/65/EU
2002/95/EC.
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SB520
Abstract: SB530 SB540 SB560 J-STD-002
Text: SB520 thru SB560 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106
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SB520
SB560
22-B106
2002/95/EC
2002/96/EC
DO-201AD
11-Mar-11
SB530
SB540
SB560
J-STD-002
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DO-204AC
Abstract: J-STD-002 SB320S SB330S SB360S sb340s SB360S-E3
Text: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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SB320S
SB360S
22-B106
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
11-Mar-11
DO-204AC
J-STD-002
SB330S
SB360S
sb340s
SB360S-E3
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MMBZ5251-V-G
Abstract: 18672 731 zener diode MMBZ5244-V-G MMBZ5248-V-G MMBZ5231-V-G
Text: MMBZ5225-V-G to MMBZ5267-V-G Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • Standard zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMBZ5225B-V-G , suffix “C” is ± 2 % tolerance • High temperature soldering guaranteed:
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MMBZ5225-V-G
MMBZ5267-V-G
MMBZ5225B-V-G)
2002/95/EC
2002/96/EC
AEC-Q101
-18/10K
10K/box
-08/3K
15K/box
MMBZ5251-V-G
18672
731 zener diode
MMBZ5244-V-G
MMBZ5248-V-G
MMBZ5231-V-G
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2322 193 vishay
Abstract: No abstract text available
Text: LSR37 Vishay BCcomponents High Voltage Surge Metal Glaze Leaded Resistor FEATURES • High pulse-loading 10 kV as specified capability (flashes) • Good replacement for carbon-composite resistors • Lead (Pb)-free solder contacts • Pure Tin plating provides compatibility with lead (Pb)-free
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LSR37
2002/95/EC
18-Jul-08
2322 193 vishay
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Untitled
Abstract: No abstract text available
Text: New Product SB120A thru SB160A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation
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SB120A
SB160A
22-B106
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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SB320S
SB360S
22-B106
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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SB320S
SB360S
22-B106
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
2011/65/EU
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65530
Abstract: SQJ844EP
Text: SQJ844EP Vishay Siliconix Automotive Dual N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQJ844EP
2002/95/EC
AEC-Q101
18-Jul-08
65530
SQJ844EP
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SUP90N03-03
Abstract: 288a A7560
Text: SPICE Device Model SUP90N03-03 Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SUP90N03-03
18-Jul-08
SUP90N03-03
288a
A7560
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si4532cdy
Abstract: No abstract text available
Text: SPICE Device Model Si4532CDY Vishay Siliconix N-Channel and P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over
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Si4532CDY
18-Jul-08
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30259
Abstract: 33152 12NC ordering code vishay ceramic capacitors SR037 SR37 SnPb40 Resistors 2306 K1000-H
Text: SR37 Vishay BCcomponents Surge Metal Film Leaded Resistor FEATURES • Metal film technology • High pulse load up to 10 kV capability • Replacement for carbon-composition resistors • Compatible with lead (Pb)-free and lead containing soldering processes
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2002/95/EC
18-Jul-08
30259
33152
12NC ordering code vishay ceramic capacitors
SR037
SR37
SnPb40
Resistors 2306
K1000-H
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Untitled
Abstract: No abstract text available
Text: GWS Vishay Draloric Vitreous Wirewound Resistors with Lugs FEATURES • • • • Complete welded construction Ceramic core High quality vitreous coating Available in adjustable = “E” or non inductive design = “Ni” • Lugs with various termination styles suitable for
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2002/95/EC
11-Mar-11
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SQ1912EEH-T1-GE3
Abstract: SQ1912EEH
Text: SQ1912EEH Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ1912EEH
2002/95/EC
AEC-Q101
OT-363
SC-70
18-Jul-08
SQ1912EEH-T1-GE3
SQ1912EEH
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SQM110N06-04L
Abstract: No abstract text available
Text: SPICE Device Model SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SQM110N06-04L
18-Jul-08
SQM110N06-04L
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SBYV27-100
Abstract: SBYV27-150 SBYV27-200 SBYV27-50 DO-204AC JESD22-B102 J-STD-002
Text: SBYV27-50 thru SBYV27-200 Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability
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SBYV27-50
SBYV27-200
DO-204AC
DO-15)
2002/95/EC
2002/96/EC
18-Jul-08
SBYV27-100
SBYV27-150
SBYV27-200
DO-204AC
JESD22-B102
J-STD-002
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J-STD-002
Abstract: SB320 SB330 SB340 SB360 sb340-e3
Text: SB320 thru SB360 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation
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SB320
SB360
22-B106
DO-201AD
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
SB330
SB340
SB360
sb340-e3
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VY2472M49Y5UG6
Abstract: marking code V5 102 Ceramic Disc Capacitors VY2103M63Y5US63V0 VY2222M35Y5US6 VY2-472 VY2472M49Y5US6 VY2332M41Y5UG6
Text: EMI/RFI Y2-VY2 Vishay Ceramic Disc Capacitors Safety Standard Approved Disc AC Capacitors FEATURES D • Complying with IEC 60384-14, 3rd edition T • High reliability • Vertical inline kinked or straight leads e = 3.0 mm max. SH = 4.0 mm max. • Compliant to RoHS directive 2002/95/EC and in
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2002/95/EC
2002/96/EC
18-Jul-08
VY2472M49Y5UG6
marking code V5
102 Ceramic Disc Capacitors
VY2103M63Y5US63V0
VY2222M35Y5US6
VY2-472
VY2472M49Y5US6
VY2332M41Y5UG6
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004B
Abstract: 104L 22R10 293D EIA535BAAC C293D106
Text: 293D Vishay Sprague Solid Tantalum Surface Mount Capacitors TANTAMOUNT Molded Case, Standard Industrial Grade FEATURES • Terminations: 100 % matte tin, standard, tin/lead available • Compliant terminations • Molded case available in six case codes
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QC300801/US0001
EIA535BAAC
2002/95/EC
18-Jul-08
004B
104L
22R10
293D
C293D106
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SB560A
Abstract: No abstract text available
Text: New Product SB520A thru SB560A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation
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SB520A
SB560A
22-B106
2002/95/EC
2002/96/EC
DO-201AD
2002/95/EC.
2011/65/EU.
SB560A
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VY2-222
Abstract: 471 Ceramic Disc Capacitors VY2-472 VY2-332
Text: EMI/RFI CapacitorS Key Benefits • Comply with IEC 60384-14, 3rd edition • ENEC-VDE, UL1414, and CSA approved • High reliability • WEEE/RoHS-compliant per EU directive 2002/95/EC • Halogen-free available • Small size • Vertical inline kink or straight leads
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UL1414,
2002/95/EC
VMN-PT9159-0911
VY2-222
471 Ceramic Disc Capacitors
VY2-472
VY2-332
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MARKING 05L
Abstract: No abstract text available
Text: GSOT05L-V Vishay Semiconductors Single-Line ESD-Protection in SOT23-3L Features • Single-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified
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GSOT05L-V
OT23-3L
OT23-3L
AEC-Q101
2002/95/EC
2002/96/EC
GSOT05L-V-G-08
18-Jul-08
MARKING 05L
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