BAT60B
Abstract: w5 marking
Text: BAT60B Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: * High Current Rectifier Schottky Diode with Low VF drop * Low Voltage, Low inductance * For Power Supply * For detection and step-up-conversion Mechanical Data: * Case: SOD-323, Plastic
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Original
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BAT60B
OD-323,
MIL-STD-202,
10VOLTS
OD-323
OD-323
19-Jul-07
BAT60B
w5 marking
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PDF
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MIL-PRF-55365
Abstract: T97E227 vs 40.09-2 T97E108 T97V477
Text: T97 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Hi-Rel COTS, Ultra-Low ESR, Conformal Coated Case FEATURES • High reliability; Weibull Failure Rate Grading available Pb-free Available • Surge current testing per MIL-PRF-55365 options available
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Original
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MIL-PRF-55365
08-Apr-05
MIL-PRF-55365
T97E227
vs 40.09-2
T97E108
T97V477
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PDF
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74808
Abstract: AN609 Si2337DS
Text: Si2337DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si2337DS
AN609
19-Jul-07
74808
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PDF
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74818
Abstract: SI4634 AN609 Si4634DY
Text: Si4634DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4634DY
AN609
19-Jul-07
74818
SI4634
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PDF
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mosfet 7193 c
Abstract: AN609 Si3465DV
Text: Si3465DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si3465DV
AN609
19-Jul-07
mosfet 7193 c
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PDF
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mosfet 4501
Abstract: mosfet 8000 AN609 Si4626DY 74817
Text: Si4626DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4626DY
AN609
19-Jul-07
mosfet 4501
mosfet 8000
74817
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PDF
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MOSFET 4407
Abstract: 4407 mosfet 4407 74811 4407 datasheet 4507 mosfet 9434 0624 CIRCUIT 4407 AN609
Text: Si3529DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si3529DV
AN609
19-Jul-07
MOSFET 4407
4407 mosfet
4407
74811
4407 datasheet
4507 mosfet
9434
0624
CIRCUIT 4407
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PDF
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rr1206
Abstract: No abstract text available
Text: VISHAY FOIL RESISTORS Resistive Products Technical Note Resistor Sensitivity to Electrostatic Discharge ESD Introduction For most of us, electrostatic discharge (ESD) and static electricity are little more than the shock received when touching a metal doorknob after walking along a carpeted
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0745
Abstract: MTZJ5.1B
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ5.1B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
409E-15
411E-10
00E-05
049E-08
0745
MTZJ5.1B
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PDF
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MTZJ20B
Abstract: No abstract text available
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ20B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ20B
668E-15
256E-11
00E-06
900E-07
MTZJ20B
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PDF
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414 transistor
Abstract: mtzj6
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ6.2B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
572E-15
019E-10
00E-05
457E-07
414 transistor
mtzj6
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PDF
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injection
Abstract: MTZJ24B
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ24B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ24B
441E-14
429E-11
00E-06
857E-07
injection
MTZJ24B
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PDF
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MTZJ27B
Abstract: diode 0476
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ27B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ27B
658E-14
345E-11
00E-06
405E-07
MTZJ27B
diode 0476
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PDF
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8b diode
Abstract: No abstract text available
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ6.8B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
451E-15
936E-11
00E-06
222E-07
8b diode
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PDF
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BV 726
Abstract: MTZJ MTZJ7.5B
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ7.5B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
379E-16
457E-11
00E-06
059E-08
BV 726
MTZJ
MTZJ7.5B
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PDF
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MTZJ15B
Abstract: No abstract text available
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ15B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ15B
068E-15
561E-11
00E-06
481E-07
MTZJ15B
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PDF
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627 DIODE
Abstract: MTZJ10B
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ10B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ10B
273E-15
187E-11
00E-06
712E-07
627 DIODE
MTZJ10B
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PDF
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VO14642AT
Abstract: VO14642AABTR C2073-2 81646 VO14642AAB
Text: VO14642AT/AABTR Vishay Semiconductors 1 Form A Solid State Relay 20091 S' S 6 DC 5 S' 4 1 2 3 S' i179031-1 DESCRIPTION The VO14642AT are high speed SPST normally open 1 Form A solid-state relay in a DIP-6 package. The relays are constructed as a multi-chip hybrid device.
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Original
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VO14642AT/AABTR
i179031-1
VO14642AT
08-Apr-05
VO14642AABTR
C2073-2
81646
VO14642AAB
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PDF
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74804
Abstract: AN609 Si3433BDV 348679
Text: Si3433BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si3433BDV
AN609
19-Jul-07
74804
348679
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PDF
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42640-2
Abstract: 7438 AN609 Si3951DV
Text: Si3951DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si3951DV
AN609
19-Jul-07
42640-2
7438
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PDF
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MTZJ9.1B
Abstract: No abstract text available
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ9.1B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
870E-15
038E-11
00E-06
371E-07
MTZJ9.1B
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PDF
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MTZJ11B
Abstract: No abstract text available
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ11B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ11B
821E-15
256E-11
00E-06
986E-07
MTZJ11B
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PDF
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MTZJ22B
Abstract: No abstract text available
Text: REFERENCE 19-Jul-07 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER MTZJ22B No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current
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Original
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19-Jul-07
MTZJ22B
320E-14
995E-11
00E-06
347E-07
MTZJ22B
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PDF
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Untitled
Abstract: No abstract text available
Text: REVISIONS THIRD ANGLE PROJ. NOTES: 1 . MATERIALS AND FINISHES PLATING THICKNESS IN M ICRO-INCHES : BODY - ZINC DIECAST, NICKEL PLATING CONTACT - PHOSPHOR BRONZE, GOLD PLATING AT MATING AREA, BRIGHT TIN PLATING AT TAIL INSULATOR - POLYPROPYLENE, NATURAL LOCK W ASH ER- S50C, NICKEL PLATING
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OCR Scan
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19--Jul--07
19-Jul-07
B705001-NPB3G-50
017050AAC00MA5F
\DWG\B\7Q5Q01
\50\NPB3G5Z
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PDF
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