M27W032
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
|
Original
|
M27W032
110ns
0020h
TSOP48
888Eh
M27W032
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory PRELIMINARY DATA FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
|
Original
|
M27W032
110ns
0020h
TSOP48
888Eh
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory PRELIMINARY DATA FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
|
Original
|
M27W032
110ns
0020h
TSOP48
888Eh
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V
|
Original
|
M27W032
110ns
0020h
888Eh
TSOP48
|
PDF
|
VFBGA60
Abstract: 7FF00
Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
|
Original
|
M58WR128ET
M58WR128EB
54MHz
100ns
VFBGA60
VFBGA60
7FF00
|
PDF
|
VFBGA60
Abstract: CR10 M58WR128EB M58WR128ET
Text: M58WR128ET M58WR128EB 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
|
Original
|
M58WR128ET
M58WR128EB
54MHz
100ns
VFBGA60
VFBGA60
CR10
M58WR128EB
M58WR128ET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: REV. 05 DATE 10-03-99 17-12-01 DESCRI PT I ON Temperature range -55C inslead of -25C CONVERSION PDM - BEC 9.3573 K.N. NL BY C'K'D' W IR IN G FACE - ID < O _l t— EC LU — LU O CL or Q IU Q. 3 ID — CE 13 LJ CAT. NUMBER U T G 6 104SN UTG6125SN UTG6128SN
|
OCR Scan
|
104SN
UTG6125SN
UTG6128SN
UTG6U12SN
UTG6202
UTG622
004DRAWING
19-Dec-2002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: REV. DATE A I— — DESCRIPTION 17-12-01 BY CONVERSION PDM - BEC 9.357] C'K'D' NL U J< O _l CE LU LU O UTG6 104PN UTG6125PN CL 3 O CE 13 LU - — < Q CE U LU Q_ L J — UTG6128PN U TG6U12PN UTG61619PN U TG 61823PN UTG62028P UTG622 - z> cc - ce LU - O CD LU CE <
|
OCR Scan
|
104PN
UTG6125PN
UTG6128PN
TG6U12PN
UTG61619PN
61823PN
UTG62028P
UTG622
L94-V0
19-Dec-2002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC DIST AF 50 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS LTR DESCRIPTION N DWN DATE REVISED PER 0 G 3 A - 0 0 1 6 - 0 3 14FEB03 APVD JR GP D D C O N T IN U O U S 1 -.267-
|
OCR Scan
|
0G3A-0016-03
14FEB03
19DEC2002
31MAR2000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AF 50 ALL RIGHTS RESERVED. R EV IS IO N S LTR P1 1 D C O N T IN U O U S STANDARD '2' -.2 67- REVERSE 4 R E E LIN G O FF TO P OF R EEL W IR E B A R R E L UP
|
OCR Scan
|
14NOV05
19DEC2002
19DEC2002
31MAR2000
|
PDF
|