Untitled
Abstract: No abstract text available
Text: 19-0 94 1 ; R ev 2 ; 7/95 J V \ J V X A J V \ . General Description TheMX7541A is high performance CMOS multiplying 12-bit digital-to-analog converter DAC . Low power operation and 12 bit (0.012%) linearity make it suitable for a wide range of precision data acquisition and
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TheMX7541A
12-bit
MX7541A
AD7541A
AD7541.
18-lead
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MX7541
Abstract: No abstract text available
Text: y u y jx iy k i CMOS 12 B it M ultiplying D/A Convertor - Features ♦ 12 Bit Linearity 1/2 LSB + 1 LSB Gain Accuracy + Guaranteed Monotonic + Low Power Consumption + Four-Quadrant Multiplication + TTL and CMOS Compatible
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OCR Scan
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MX7541A
12-bit
AD7541A
AD7541.
18-lead
MX7541
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41C1000
Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Text: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000C
KM41C1000C
576x1
KM41C1000C-6
KM41C1000C-7
KM41C100
20-LEAD
41C1000
KM41C1000CJ-7
1mx1 DRAM DIP
41C100
KM41C1000C-8
KM41C1000CJ7
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PDF
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1000CLP
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
KM41C1000CL-7
KM41inued)
20-LEAD
1000CLP
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
110ns
KM41C1000CL-7
130ns
KM41C1000CL-8
150ns
GD1S412
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PDF
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Untitled
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS D im e n sio n s in M ilim e ters 8 - D P -3 0 0 n n r~i n 12-D IPH -300 12 n n n n n n LS □ 6 !o U T T ' LT U 167 Cl CP ELECTRONICS PACKAGE DIMENSIONS D im e n sio n s in M ilim e ters 14-DIPH-300 ~i i— i : • o “ci! cn cn □
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14-DIPH-300
-300A
18-PLCC-REC
32-PLCC-REC.
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Untitled
Abstract: No abstract text available
Text: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 KM41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung KM41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its
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KM41C1000C
KM41C1000C
576x1
110ns
KM41C1000C-7
130ns
KM41C1000C-8
KM41C1000C-6
150ns
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KM41C1000CJ-6
Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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b4142
KM41C1000C
KM41C1000C-6
110ns
KM41C1000C-7
130ns
KM41C1000C-8
150ns
256Kx4
KM41C1000CJ-6
KM41C1000cJ-7
KM41C1000CP-6
KM41C1000CG-7
741i
DRAM 18DIP
km41c1000
KM41C1000CP-7
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KM41C1000CLP
Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
Text: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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KM41C1000CL
KM41C1000CL-6
110ns
KM41C1000CL-7
130ns
KM41C1000CL-8
150ns
200fiA
cycle/64ms
256Kx4
KM41C1000CLP
KM41C1000CLJ
DRAM 18DIP
Scans-001144
samsung hv capacitor
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DRAM 18DIP
Abstract: KM41C1000CSL-6 KM41C1000CSL-7 KM41C1000CSL-8 DRAM 256kx4
Text: SAMSUNG ELE CTRONICS INC b?E ]> Wt 7 ^ 4 1 4 2 KM41C1000CSL 0015414 ?hh SM6K CM O S DRAM 1Mx1 Bit CM O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM 41C1000CSL is a C M O S high speed 1,048,576x1 Dynamic Random A cce ss Memory. Its
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KM41C1000CSL
KM41C1000CSL-6
110ns
KM41C1000CSL-7
130ns
KM41C1000CSL-8
150ns
100fiA
100/A
cycle/128ms
DRAM 18DIP
DRAM 256kx4
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> 7 = ^ 4 1 4 2 0 0 1 5 4 1 4 7bb H S f l G K CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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KM41C1000CSL
KM41C1000CSL
576x1
KM41C1000CSL-6
110ns
130ns
KM41C1000CSL-8
KM41C1000CSL-7
150ns
20-LEAD
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PDF
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47IlF
Abstract: T3D85 T3D 8 KM41C1000CSLP6
Text: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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OCR Scan
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KM41C1000CSL
KM41C1000CSL
576x1
KM41C1000CSL-6
KM41C1nches
20-LEAD
47IlF
T3D85
T3D 8
KM41C1000CSLP6
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PDF
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