BZX79 5v1
Abstract: BZX795V1 PM5785 BZX79-5V1 TDS520 circuit AN95086 philips capacitor 63v 10u TDS520 2222638 tt 2222 Datasheet
Text: APPLICATION NOTE Video Amplifier Board with TDA4885 and CR1296 AN96074 Philips Semiconductors Video Amplifier Board with TDA4885 and CR1296 Application Note AN96074 Abstract This report describes the video amplifier board with 150 MHz video controller and 120 MHz output amplifier
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TDA4885
CR1296
AN96074
CR1296.
CR1296
BZX79 5v1
BZX795V1
PM5785
BZX79-5V1
TDS520 circuit
AN95086
philips capacitor 63v 10u
TDS520
2222638
tt 2222 Datasheet
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zener smd marking de
Abstract: smd diode 8D smd diode marking 77 CMBZ5227B CMBZ5228B CMBZ5229B CMBZ5225B CMBZ5226B WT SOT23-3 wT 3 sot23 ZENER
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILIICON PLANAR ZENER DIODE CMBZ 5225B to CMBZ5229B SOT-23 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 1 2 General Purpose Zener Diode ABSOLUTE MAXIMUM RATINGS Tamb=25deg C
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5225B
CMBZ5229B
OT-23
25deg
CMBZ5225B
CMBZ5226B
CMBZ5227B
CMBZ5228B
C-120
zener smd marking de
smd diode 8D
smd diode marking 77
CMBZ5227B
CMBZ5228B
CMBZ5229B
CMBZ5225B
CMBZ5226B
WT SOT23-3
wT 3 sot23 ZENER
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smd diode 8D
Abstract: smd marking 18e SMD marking 8M zener smd transistor 8c CMBZ5225B CMBZ5226B CMBZ5227B CMBZ5228B CMBZ5229B wT 3 sot23 ZENER
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SILIICON PLANAR ZENER DIODE CMBZ 5225B to CMBZ5229B SOT-23 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE
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5225B
CMBZ5229B
OT-23
25deg
CMBZ5225B
CMBZ5226B
CMBZ5227B
CMBZ5228B
C-120
smd diode 8D
smd marking 18e
SMD marking 8M zener
smd transistor 8c
CMBZ5225B
CMBZ5226B
CMBZ5227B
CMBZ5228B
CMBZ5229B
wT 3 sot23 ZENER
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transistor c373
Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380 o
transistor c380
AN-994
IRGBC30MD2-S
SMD-220
C380 ge
Tx/c380 transistor
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transistor c373
Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
Text: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
SMD-220
C-380
transistor c373
c380 transistor
transistor c375
transistor c380
transistor c380 o
AN-994
IRGBC30MD2-S
SMD-220
transistor c374
C374
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transistor C372
Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC20MD2-S
10kHz)
SMD-220
C-372
transistor C372
c372 transistor
transistor C368
c371 transistor
AN-994
IRGBC20MD2-S
SMD-220
C-366
C369 transistor
c369
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IRGBC30KD2-S
Abstract: GC smd diode AN-994 SMD-220
Text: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC30KD2-S
applica480V
SMD-220
IRGBC30KD2-S
GC smd diode
AN-994
SMD-220
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g10 smd transistor
Abstract: IRGBC20KD2-S AN-994 SMD-220 GC smd diode
Text: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC20KD2-S
SMD-220
g10 smd transistor
IRGBC20KD2-S
AN-994
SMD-220
GC smd diode
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gFE smd diode
Abstract: AN-994 IRGBC20KD2-S SMD-220
Text: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes
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IRGBC20KD2-S
SMD-220
gFE smd diode
AN-994
IRGBC20KD2-S
SMD-220
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Diodes smd f5
Abstract: No abstract text available
Text: Schottky Barrier Diodes lo = 1 A to 0.1 A, single or array, low V f, or low leakage. # F o r Rectifier & Electrical characteristics Ta=25“C Ir ( W A) Max. CT (pF) Typ. VF (V) Max. VR (V) f (MHz) Vr (V) If (A) Absolute maximum ratings (Ta=25°C) Vrm (V)
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RB035B-40
RB031B-40
RB160L-40
RB110C
RB111C
RB401D
RB435C
RB400D
RB400D-40
RB411D
Diodes smd f5
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c372 transistor
Abstract: transistor C369 transistor C372
Text: International lü Rectifier PD -9.1141 IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ps @125°C, VGE= 15V Switching-loss rating includes all "tail" losses
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IRGBC20MD2-S
-10ps
10kHz)
C-371
SMD-220
C-372
00201fe2
c372 transistor
transistor C369
transistor C372
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transistor C372
Abstract: c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor
Text: P D - 9.1141 htemational iörIRectifier IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated - 1 0 m s @ 125°C, VGe = 15V Switching-ioss rating includes all "tail" losses
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10kHz)
IRGBC20MD2-S
C-371
SMD-220
C-372
transistor C372
c372 transistor
transistor c367
transistor C368
c371 transistor
C372 O
smd transistor 18E
c366
transistor smd qe
g10 smd transistor
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transistor c925
Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Text: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
C-927
SMD-220
C-928
transistor c925
smd transistor c928
transistor c923
c927
diode c928
DIODE C921
transistor smd qe
c924
diode smd qe
C925
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c380 transistor
Abstract: transistor c380 transistor c373 transistor c380 o transistor c374 transistor T C380 transistor c377 smd transistor 18E
Text: kitemational i« ]Rectifier P D - 9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ns @125°C, VGE = 15V • Switching-ioss rating includes all "tail" losses
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-10ns
10kHz)
IRGBC30MD2-S
C-379
SMD-220
C-380
c380 transistor
transistor c380
transistor c373
transistor c380 o
transistor c374
transistor T C380
transistor c377
smd transistor 18E
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transistor c374
Abstract: transistor c373 transistor c377
Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30MD2-S
10kHz)
high-volta379
SMD-220
C-380
transistor c374
transistor c373
transistor c377
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A/smd diode t53
Abstract: No abstract text available
Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,
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IRG4ZC70UD
SMD-10
A/smd diode t53
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transistor c925
Abstract: DIODE C921
Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
-10ns
D020717
SMD-220
C-928
transistor c925
DIODE C921
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
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c918
Abstract: C918 diode C913
Text: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses
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IRGBC20KD2-S
i002070
SMD-220
C-920
c918
C918 diode
C913
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Untitled
Abstract: No abstract text available
Text: PD - 91723 International I R Rectifier IRG4ZC71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, ts c =10ns, V c c = 3 6 0 V , T j = 125°C,
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IRG4ZC71KD
SMD-10
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TRANSISTOR SMD 9bb
Abstract: TI 42A
Text: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
TRANSISTOR SMD 9bb
TI 42A
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Untitled
Abstract: No abstract text available
Text: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
SMD-10
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diode smd ED 68
Abstract: transistor smd 4.z ttp 916
Text: I International IG R Rectifier PD -9.16 68 A IR G 4 Z Q 7 0 U D preliminary INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Surface Mountable UltraFast CoPack IGBT Features • U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies
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t 317 transistor
Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
Text: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,
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IRG4ZH71KD
t 317 transistor
bjc 2100
diode um 42A
smd diode sm 3c
kd smd transistor
IOR 451
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