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    TT Electronics plc OP133

    Infrared Emitters - High Power High Intensity 935nm
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    TTI OP133 Bulk 8,700 50
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    • 100 $2.95
    • 1000 $2.69
    • 10000 $2.58
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    TT Electronics plc OP265A

    Infrared Emitters High Intensity 890nm
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    TTI OP265A Bulk 8,396 4
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    • 10 $1.27
    • 100 $1.16
    • 1000 $1.07
    • 10000 $1.03
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    Vishay Intertechnologies VLDTG1232R-08

    Standard LEDs - SMD Green 16K mcd; 515nm Dome Lens 3V; 20mA
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    TTI VLDTG1232R-08 Reel 7,500 1,500
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    TT Electronics plc OP266A

    Infrared Emitters Infrared 890nm
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    TTI OP266A Bulk 5,600 100
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    • 100 $1.2
    • 1000 $1.09
    • 10000 $0.94
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    ams OSRAM Group Q65111A3903

    Infrared Emitters - High Power Infrared, 940nm
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    TTI Q65111A3903 Reel 4,000 2,000
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    18DEG Datasheets Context Search

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    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    Untitled

    Abstract: No abstract text available
    Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


    Original     		PDF SIR-320ST3F SIR-320ST3F 940nm 18deg. 940nm)

    Untitled

    Abstract: No abstract text available
    Text: SIR-320ST3F SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


    Original     		PDF SIR-320ST3F SIR-320ST3F 940nm 18deg.

    MI-MV13

    Abstract: M4T11 cmos 3.1 megapixel 18 pin image sensor V7514 "Micron Technology" cmos c16
    Text: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic


    Original     		PDF MI-MV13 10-bit 10-bit-wide 09005aef806807ca MT9M413C36STC M4T11 cmos 3.1 megapixel 18 pin image sensor V7514 "Micron Technology" cmos c16

    PB-MV40

    Abstract: Photobit MV40 D100 D109 D110 D119 D120 D129 D130
    Text: PB-MV40 4 Megapixel CMOS Active-Pixel Digital Image Sensor 2001 Photobit Technology Corporation. All rights reserved. Photobit Technology Corporation is a wholly owned subsidiary of Photobit Corporation. Photobit, the wave and binary symbol, Behind Every Great Digital Image, and TrueBit are registered trademarks-and TrueColor, TrueSNAP Shuttered-Node


    Original     		PDF PB-MV40 prod05 D-263 PB-MV40 Photobit MV40 D100 D109 D110 D119 D120 D129 D130

    PB-MV13

    Abstract: Photobit PB-1024 PHILIPS mpr24 8097 architecture MV13 DATA-71 data61 Data72 Photobit 720
    Text: PB-MV13 20mm CMOS Active-Pixel Digital Image Sensor 2000 Photobit Corporation. All rights reserved. Photobit, the wave and binary symbol, and Behind Every Great Digital Image are registered trademarks, and TrueBit, TrueColor, TrueSNAP Shuttered-Node Active Pixel , Fully Flexible Open Architecture, Serial Host Interface Port, and Leading the Active Pixel Revolution are trademarks, of Photobit Corporation in


    Original     		PDF PB-MV13 PB-MV13 280-Pin Photobit PB-1024 PHILIPS mpr24 8097 architecture MV13 DATA-71 data61 Data72 Photobit 720

    GLW3801C

    Abstract: GSB3801C GSG3801C GSW3801C
    Text: G□□3801C φ3 Flush Mount Type LED Features Package φ3 Flush Mount Type. Water clear resin Product features ・Outer Dimension φ3 Flush Mount Type. ・Low power consumption type ・Operation temperature range Storage Temperature Operating Temperature


    Original     		PDF G3801C 31TYP. 32TYP 470nm 530nm 40deg. 45deg. 18deg. GLW3801C GSB3801C GSG3801C GSW3801C

    GaAs 850 nm Infrared Emitting Diode

    Abstract: toy IR remote control circuit diagram SIR-320ST3F
    Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


    Original     		PDF SIR-320ST3F SIR-320ST3F 940nm 18deg. 940nm) GaAs 850 nm Infrared Emitting Diode toy IR remote control circuit diagram

    PD015F52

    Abstract: No abstract text available
    Text: epitex PHOTO-DIODE Opto-Device & Custom LED PD015F52 Lead Pb Free Product – RoHS Compliant PD015F52 hermetical sealing type photo-diode PD015F52 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 1.3x1.3mm active area mounted


    Original     		PDF PD015F52 PD015F52 18degrees. 1000Lx

    SIR-320ST3F

    Abstract: No abstract text available
    Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,


    Original     		PDF SIR-320ST3F SIR-320ST3F 940nm 18deg. 940nm)

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor


    Original     		PDF AN4399

    L3374

    Abstract: No abstract text available
    Text: ODRKGF1283P-01 Electronic Components KGF1283P Issue Date:Sep 1, 2005 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1283P, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power, high gain, and high efficiency. The KGF1283P specifications are guaranteed to a fixed


    Original     		PDF KGF1283P ODRKGF1283P-01 KGF1283P, OT-89 KGF1283P 850MHz; L3374

    HCS08 code example assembly

    Abstract: HCS08 ADC code example assembly HCS08 c code example AN3031 HCS08 c code example interrupt HCS08 c code ATD function example microcontroller based temperature sensor temp sensor project IC Temperature Sensors Silicon temperature sensors
    Text: Freescale Semiconductor Application Note Document Number: AN3031 Rev. 0, 09/2006 Temperature Sensor for the HCS08 Microcontroller Family by: Donnie Garcia MCD Applications, Austin, Texas Rafael Peralez RTAC Americas, Guadalajara, Mexico 1 Introduction This document explains how to use the temperature


    Original     		PDF AN3031 HCS08 S08ADCV1) HCS08 code example assembly HCS08 ADC code example assembly HCS08 c code example AN3031 HCS08 c code example interrupt HCS08 c code ATD function example microcontroller based temperature sensor temp sensor project IC Temperature Sensors Silicon temperature sensors

    C214P

    Abstract: KGF1191 CB 0925 C107P cc 3061
    Text: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の 小信号2段アンプです。


    Original     		PDF J2Q0016-38-71 KGF1191 KGF1191 KGF1191UHFL 3V850MHz -35dBm Z075W, C214P CB 0925 C107P cc 3061

    GaAs FET sot89

    Abstract: L3374
    Text: ODRKGF1283-03 Electronic Components KGF1283 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power, high gain, and high efficiency. The KGF1283 specifications are guaranteed to a fixed


    Original     		PDF KGF1283 ODRKGF1283-03 KGF1283, OT-89 KGF1283 850MHz; GaAs FET sot89 L3374

    GaAS fet sot89

    Abstract: No abstract text available
    Text: ODRKGF1313-03 Electronic Components KGF1313 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete driver FET with frequency ranging from UHF-band to L-band. This device features high output power and high efficiency. The KGF1313


    Original     		PDF KGF1313 ODRKGF1313-03 KGF1313, OT-89 KGF1313 27dBm) GaAS fet sot89

    HCS08 ADC code example assembly

    Abstract: HCS08 c code ATD function example HCS08 code example assembly HCS08 c code example HCS08 c code example interrupt VTEMP25 AN3031 microcontroller based temperature sensor HCS08 MC9S08QG8
    Text: Freescale Semiconductor Application Note Document Number: AN3031 Rev. 1, 04/2010 Temperature Sensor for the HCS08 Microcontroller Family by: Donnie Garcia MCD Applications, Austin, Texas Rafael Peralez RTAC Americas, Guadalajara, Mexico 1 Introduction This document explains how to use the temperature


    Original     		PDF AN3031 HCS08 S08ADCV1) HCS08 ADC code example assembly HCS08 c code ATD function example HCS08 code example assembly HCS08 c code example HCS08 c code example interrupt VTEMP25 AN3031 microcontroller based temperature sensor MC9S08QG8

    PD1300-130D32-I

    Abstract: No abstract text available
    Text: epitex 5 STEM TYPE InGaAs PD Opto-Device & Custom LED Lead Pb Free Product RoHS compliant PD1300-130D32-I InGaAs PIN-PD PD1300-130D32-I is InGaAs PIN-photodiode featuring excellent responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 1mm dia. of active area mounted


    Original     		PDF PD1300-130D32-I PD1300-130D32-I 18degrees.

    MI-MV13

    Abstract: 14 pin cmos IMAGE SENSOR 3-pin IR sensor monochrome cmos digital image image sensor MT9M413 mt9m413 CMOS digital image sensor with global shutter sensor g18 13-megapixel MT9M413C36STC
    Text: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic


    Original     		PDF MT9M413 MT9M413C36STC MI-MV13 10-bit 10-bit-wide 09005aef806807ca MT9M413C36STC 14 pin cmos IMAGE SENSOR 3-pin IR sensor monochrome cmos digital image image sensor MT9M413 mt9m413 CMOS digital image sensor with global shutter sensor g18 13-megapixel

    N305

    Abstract: Radian
    Text: A C INTERFACE INC IDE D | 0023303 000041S 7 | ÂN305 N ia m e y . T -H I-H . STAN LEY IN FR A R ED LED unit:mm±o.2 > • P ackage Dim ensions ■FEATURES (1 High radiant power GaAs type (Po = 8m W TYP.) (2) 950nm peak wavelength (3) Narrow directivity(A0=18deg.)achieves a


    OCR Scan     		PDF 000041S 950nm 18deg. 25mW/sr) 0D533fl3 0DGG417 lF-50mA S1/100 T-41-1 50roA) N305 Radian

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TA12 11 N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 121 1N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G /B. To cope with bi-scan, this IC has w ide Y band. And


    OCR Scan     		PDF TA1211N 068//F 10/uF SDIP54-P-600-1

    contrans

    Abstract: TA1211N digital analog convertor hbcq
    Text: TO SHIBA TA1211N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 2 1 SILICON MONOLITHIC 1 N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G /B. To cope with bi-scan, this IC has wide Y band. And


    OCR Scan     		PDF TA1211N ta121 TA1211N 300kfà 110kfà 470kfà 068//F SDIP54-P-600-1 contrans digital analog convertor hbcq

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGF1313 Power FET for UHF-Band and PCS Frequencies Plastic Mold Type GENERAL DESCRIPTION The KGF1313, housed in an SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF band to the L band. This device features high efficiency and


    OCR Scan     		PDF KGF1313 KGF1313, OT-89 KGF1313 2424D D227c

    LN57

    Abstract: LN58 fl37
    Text: PANASONIC INDL/ELEKÍSEÍIIJ 7EC D | t,T3Efi54 6932852 PANASONIC INDLtELECTRONIC 7 f? h lU C 7 h D - ^ 0 ^ 1 W X □ □ □ ‘iñBL. 72C 0 9 8 3 Ó ñ J~ _ _ D _ _ LN5 7 T-Hi-ll LN57 GaAs -f K /G a A s Infrared Light Emitting Diode


    OCR Scan     		PDF 950nm 18deg. 18deg LN57 LN58 fl37