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    18CM3 Search Results

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    18CM3 Price and Stock

    Linear Technology LT1018CM 3.3

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    Bristol Electronics LT1018CM 3.3 19
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    Bourns Inc CM322522-1R5KL

    Power Inductors - SMD 1.5uH 10% Wirewound
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    TTI CM322522-1R5KL Reel 8,000 2,000
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    Bourns Inc CM322522-680KL

    Power Inductors - SMD 68uH 10% Wirewound
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    TTI CM322522-680KL Reel 10,000
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    Bourns Inc CM322522-6R8JL

    Power Inductors - SMD 6.8uH 5% 150mA
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    TTI CM322522-6R8JL Reel 10,000
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    Bourns Inc CM322522-4R7JL

    Power Inductors - SMD CHIP INDUCTOR SMT 4.7uH
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    TTI CM322522-4R7JL Reel 10,000
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    18CM3 Datasheets Context Search

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    AN2386

    Abstract: Atlas silvaco 14047 silvaco
    Text: AN2386 Application note How to achieve the threshold voltage thermal coefficient of the MOSFET acting on design parameters Introduction Today, the MOSFET devices are used mainly as switches in electronic circuits. In such operational conditions, the MOSFET device works in switch on and switch off modes.


    Original     		PDF AN2386 AN2386 Atlas silvaco 14047 silvaco

    pn junction diode structure

    Abstract: "punchthrough voltage" AND ESD design ideas TVS diode Application Note
    Text: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations


    Original     		PDF SI96-06 18cm-3) pn junction diode structure "punchthrough voltage" AND ESD design ideas TVS diode Application Note

    SI96-06

    Abstract: pn junction diode structure "punchthrough voltage" AND ESD design ideas 3.3V TVS diode
    Text: SI96-06 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS EPD Transient Voltage Suppressors for Low Voltage Electronics passivation At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages below 5V, very high impurity concentrations


    Original     		PDF SI96-06 18cm-3) SI96-06 pn junction diode structure "punchthrough voltage" AND ESD design ideas 3.3V TVS diode

    Untitled

    Abstract: No abstract text available
    Text: Surging Ideas TVS Diode Application Note SI96-06 TEL: 805-498-2111 FAX: 805-498-3804 SLV Series Transient Voltage Suppressors for Low Voltage Electronics At voltages below 5V, conventional avalanche technology is impractical. In order to achieve stand-off voltages


    OCR Scan     		PDF SI96-06 18cm3)