ct60am18b
Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A
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CT60AM-18B
ct60am18b
BR 101 Transistor
IGBT 900v 60a
CT60AM-18B
diode 18B
Diode Transistor
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ct60am
Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V
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CT60AM-18B
20MAX.
ct60am
resonant inverter
CT60AM-18B
MITSUBISHI Microwave Transistors
IGBT 900v 60a
8600V
TRANSISTOR ct60am
microwave inverter ic
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Untitled
Abstract: No abstract text available
Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details HSD2-18B Product Details Military/Aerospace High Performance Relays
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HSD2-18B
HSD2-18B
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Untitled
Abstract: No abstract text available
Text: T-1 3/4 5mm SOLID STATE LAMP Part Number: L-7113CGCK Green Features Description z Low power consumption. The Green source color devices are made with AlGaInP on z Popular T-1 3/4 diameter package. GaAs substrate Light Emitting Diode. z General purpose leads.
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L-7113CGCK
DSAA9469
MAR/18/2013
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Untitled
Abstract: No abstract text available
Text: T-1 3mm SOLID STATE LAMP Part Number: L-34GD Green Features Description z Low power consumption. The Green source color devices are made with Gallium z Popular T-1 diameter package. Phosphide Green Light Emitting Diode. z General purpose leads. z Reliable and rugged.
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L-34GD
DSAA7904
MAR/30/2013
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012CGCK Green Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode. z Wide viewing angle.
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KP-2012CGCK
2000pcs
surface11
DSAB1331
DEC/29/2011
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KPT-1608SYCK Super Bright Yellow Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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KPT-1608SYCK
2000pcs
DEC/22/2011
DSAB0858
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KP-1608SYCK Super Bright Yellow Features Description z 1.6mmX0.8mm SMT LED, 1.1mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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KP-1608SYCK
2000pcs
DSAB5347
SEP/26/2012
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Untitled
Abstract: No abstract text available
Text: 3.4mm RIGHT ANGLE LED INDICATOR Part Number: L-1384AD/1GD Green Features Description z Ideal for card edge status indication. The Green source color devices are made with Gallium z Wide viewing angle. Phosphide Green Light Emitting Diode. z High reliability-life measured in years.
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L-1384AD/1GD
DSAA0503
SEP/05/2013
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Untitled
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: KPH-1608SYCK Super Bright Yellow Features Description 1.6mmX0.8mm SMT LED, 0.65mm thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip.
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KPH-1608SYCK
2000pcs
DSAA7843
FEB/21/2014
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Untitled
Abstract: No abstract text available
Text: 3.0mmx1.0 mm RIGHT ANGLE SMD CHIP LED LAMP Part Number: KPA-3010CGCK Green Features Description z 3.0mmx1.0mm right angle SMT LED, 2.0mm thickness. The Green source color devices are made with AlGaInP on z Low power consumption. GaAs substrate Light Emitting Diode.
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KPA-3010CGCK
2000pcs
DSAA6516
MAY/07/2014
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Untitled
Abstract: No abstract text available
Text: 3.4mm RIGHT ANGLE LED INDICATOR Part Number: L-1384AD/1GD Green Features Description z Ideal for card edge status indication. The Green source color devices are made with Gallium z Wide viewing angle. Phosphide Green Light Emitting Diode. z High reliability-life measured in years.
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L-1384AD/1GD
DSAA0503
18Blication
SEP/05/2013
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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KPT-2012SYCK
2000pcs
DSAB1887
NOV/19/2013
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Untitled
Abstract: No abstract text available
Text: 2.1x0.6mm RIGHT ANGLE SURFACE LED LAMP Part Number: KPA-2106CGCK Green Features Description 2.1mmX0.6mm right angle SMT LED, 1.0mm thickness. The Green source color devices are made with AlGaInP on Low power consumption. GaAs substrate Light Emitting Diode.
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KPA-2106CGCK
2000pcs
DSAC0136
MAR/31/2014
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IGBT 200V 50A
Abstract: No abstract text available
Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz IGBT co-packaged with HEXFREDTM ultrafast,
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IRG4PC50SDPbF
O-247AC
IGBT 200V 50A
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diode T-77
Abstract: T-72 diode 5.6B ZENER MTZJ T-72 16B 5.6B DIODE 24B ZENER DIODE 9.1B 7.5B 35 DIODE MTZJ-8.2B 36b 75
Text: MTZJ36B Diodes Zener diode MTZJ36B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ36B
DO-34
30pcs
082nA
10pcs
diode T-77
T-72 diode
5.6B ZENER
MTZJ T-72 16B
5.6B
DIODE 24B
ZENER DIODE 9.1B
7.5B 35
DIODE MTZJ-8.2B
36b 75
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MTZJ T-72 16B
Abstract: MTZJ18B T-77 T-72 diode MTZJ 15 T-72 MTZJ 7.5 B T-72 diode T-77 diode T-72 5.1B mtzj diode T77 MTZJ T-72 12B
Text: MTZJ30B Diodes Zener diode MTZJ30B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2
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MTZJ30B
DO-34
30pcs
084nA
10pcs
MTZJ T-72 16B
MTZJ18B T-77
T-72 diode
MTZJ 15 T-72
MTZJ 7.5 B T-72
diode T-77
diode T-72
5.1B mtzj
diode T77
MTZJ T-72 12B
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CT60AM-18B
Abstract: resonant inverter IGBT CT60AM CT60AM18B ct60am
Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT60AM-18B RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 2 •— ' V c e s . 900V ' l e .60A
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CT60AM-18B
20MAX.
57KH23
CT60AM-18B
resonant inverter
IGBT CT60AM
CT60AM18B
ct60am
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR
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CT60AM-18B
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Marking 18A
Abstract: MARKING 8S SOT-23
Text: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C
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OT-23
MMBZ5221BLT1
MMBZ5222BLT1
MMBZ5223BLT1
MMBZ5224BLT1
MMBZ5225BLT1
MMBZ5226BLT1
MMBZ5227BLT1
MMBZ5228BLT1
MMBZ5229BLT1
Marking 18A
MARKING 8S SOT-23
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ZENER DIODES SOT-23
Abstract: marking 18j sot23 MARKING 8S SOT-23
Text: CÎ! |t y p e n o . ZENER DIODES SOT-23 CASE ZZK TEST ZENER CURRENT VOLTAGE IZ=.25mA @10%Mod MAX VR V MARKING VZ +5% Nominal ohms MAX ohms Max MMBZ5221BL 20 2.4 1200 30 100 1.0 18A MMBZ5222BL MMBZ5223BL MMBZ5224BL 20 20 20 20 20 2.5 2.7 30 30 18B 30 29 28
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MMBZ5221BL
MMBZ5222BL
MMBZ5223BL
MMBZ5224BL
MMBZ5225BL
MMBZ5226BL
MMBZ5227BL
MMBZ5228BL
MMBZ5229BL
MMBZ5230BL
ZENER DIODES SOT-23
marking 18j sot23
MARKING 8S SOT-23
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DS75-08B
Abstract: No abstract text available
Text: |B B j J Rectifier Diodes Avalanche Diodes DS75 DSI75 DSA75 DSAI75 ^FRMS ^FAVM v¥ 1 .Anode vR R U . B R , r f n v’ R S M V on stud V V V 1 ^ •f- on stud - DS75-08B DS75-12B DSI75-08B DSI 75-12B 1300 1760 1950 1200 1600 1800* DSA75-12B DSA75-16B DSA75-18B
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DSI75
DSA75
DSAI75
-DO-203
DS75-08B
DS75-12B
DSI75-08B
75-12B
DSA75-12B
DSA75-16B
DS75-08B
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gz zener
Abstract: 39A zener diode RZ33A 6AR6 GZ33AR GZ47A GZ27AR 34 GZ gz 77 diodes 415 39a
Text: y zener diodes diodes zener THOMSON-CSF Type» Vc min 10 W / Tease GZ 6A, GZ 8A, GZ 10A, GZ 12A, GZ 15A, GZ 18A, GZ 22A, GZ 27A, GZ 33A, GZ39A, GZ 47A, GZ 56A, GZ68A, GZ 82A, GZ 10B, GZ 12B, GZ 15B, GZ 18B, R (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R) (R)
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10-4/OC)
gz39a,
cb-33)
rz68a,
1/4-28UNF"
cb-34)
gz zener
39A zener diode
RZ33A
6AR6
GZ33AR
GZ47A
GZ27AR
34 GZ
gz 77
diodes 415 39a
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RZ18B
Abstract: RZ39A RZ47A RZ15A RZ12BR
Text: STC D I S G S— THOMSON 7 ^ 2 3 7 QÜÜSSQQ 4 f ? ^ 590 02500 O D T H O M S O N -C S F R Z 6 A DIVISION SEMICONDUCTEURS — R Z 18B . • ZENER DIODES DIODES ZENER 50 W silicon Zener diodes : • • • Hermetically sealed metal according to normalization CCTU : F 10'and JEDEC DO-5.
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RZ18B
RZ18B
RZ39A
RZ47A
RZ15A
RZ12BR
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