MHW1810
Abstract: MHW1810-1 MHW1810-2
Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers • Specified 26 Volts, 1805–1880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts MHW1810–1
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MHW1810/D
MHW1810-1
MHW1810-2
MHW1810
301AW
MHW1810-1
MHW1810-2
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1810-1 MHW1810-2 PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit
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MHW1810/D
MHW1810-1
MHW1810-2
301AWâ
MHW1810â
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Untitled
Abstract: No abstract text available
Text: JRC SAW FILTER NSVS718 Application PCS USA TX HALF BAND ( 2 IN - 2 OUT ) Electrical Specification: (Table 1) The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Parameter Input and Output Impedance Nominal Center Frequency(f0)
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NSVS718
1880MHz
1910MHz
1500MHz
1750MHz
1960MHz
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MHW1810
Abstract: MHW1810-1 MHW1810-2
Text: MOTOROLA Order this document by MHW1810/D SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF Line PCS Band RF Power LDMOS Amplifiers 1805ā–ā1880 MHz, 10 W RF POWER LDMOS AMPLIFIERS CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit
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MHW1810/D
MHW1810-1
MHW1810-2
301AW
MHW1810
MHW1810-1
MHW1810-2
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zo 405 mf
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030A
MRF18030AR3
MRF18030AS
MRF18030ASR3
zo 405 mf
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SMD Transistor z6
Abstract: MRF18060A BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to
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MRF18060A/D
MRF18060A
MRF18060AS
GSM1805
MRF18060A
SMD Transistor z6
BC847
GSM1800
GSM1805
LP2951
MRF18060
MRF18060AS
465A-04
smd 4-pin
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030A
MRF18030AR3
MRF18030AS
MRF18030ASR3
MRF18030A/D
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RF POWER TRANSISTOR NPN, motorola
Abstract: MRF18060 MRF18060A
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060A/D
GSM1805
MRF18060A
MRF18060AR3
MRF18060ASR3
RF POWER TRANSISTOR NPN, motorola
MRF18060
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IRL 724 N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030A
MRF18030AR3
MRF18030AS
MRF18030ASR3
IRL 724 N
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400S
Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030AR3
MRF18030ASR3
400S
MRF18030A
MRF18030ASR3
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MRF18030A
Abstract: IRL 724 N 400S MRF18030ALR3 MRF18030ALSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3
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MRF18030A/D
MRF18030ALR3
MRF18030ALSR3
MRF18030ALR3
MRF18030A
IRL 724 N
400S
MRF18030ALSR3
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MRF18030A
Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030AR3
MRF18030ASR3
MRF18030A
2019 gain
400S
MRF18030ASR3
1003 c2
J1022
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Transistor z1
Abstract: MRF18060A
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from
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MRF18060A/D
MRF18060A
MRF18060AR3
MRF18060AS
MRF18060ASR3
GSM1805
MRF18060ASR3
Transistor z1
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MRF18030ALSR3
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies
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MRF18030A/D
MRF18030AR3
MRF18030ALR3
MRF18030ASR3
MRF18030ALSR3
MRF18030ALSR3
MRF18030A/D
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transistor smd z3
Abstract: BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060ALSR3 MRF18060AR3 MRF18060ASR3 SMD transistor Z2
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from
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MRF18060A/D
GSM1805
MRF18060AR3
MRF18060ASR3
MRF18060ALSR3
transistor smd z3
BC847
GSM1800
LP2951
MRF18060
MRF18060ALSR3
SMD transistor Z2
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DEMO 0365 R
Abstract: SMD Transistor z6 Transistor z1 MRF18060A transistor smd z3 BC847 SOT-23 PACKAGE 0805 smd z5 transistor 927 SOT23 GSM1805 LP2951
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from
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MRF18060A/D
MRF18060A
MRF18060AR3
MRF18060ALSR3
MRF18060ASR3
GSM1805
MRF18060A
MRF18060AR3
MRF18060ALSR3
DEMO 0365 R
SMD Transistor z6
Transistor z1
transistor smd z3
BC847 SOT-23 PACKAGE 0805
smd z5 transistor
927 SOT23
GSM1805
LP2951
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J5-18
Abstract: MRF18085A
Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with
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MRF18085A/D
MRF18085A
MRF18085AR3
MRF18085ALSR3
J5-18
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MRF18085ALS
Abstract: MRF18085A
Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with
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MRF18085A/D
MRF18085A
MRF18085AR3
MRF18085ALSR3
MRF18085ALS
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MRF18085A
Abstract: GSM1800 MRF18085ALSR3 MRF18085AR3 MRF18085ALS
Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with
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MRF18085A/D
MRF18085A
MRF18085AR3
MRF18085ALSR3
MRF18085A
MRF18085AR3
GSM1800
MRF18085ALSR3
MRF18085ALS
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MRF18085A
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with
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MRF18085AR3
MRF18085ALSR3
MRF18085A
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smd transistor wb1
Abstract: wb1 sot package sot-23
Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090A/D
MRF18090A
MRF18090AS
smd transistor wb1
wb1 sot package sot-23
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smd wb1
Abstract: smd diode wb1 smd wb2 wb1 sot package sot-23 465B BC847 GSM1800 LP2951 MRF18090A MRF18090AS
Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090A/D
MRF18090A
MRF18090AS
MRF18090A
smd wb1
smd diode wb1
smd wb2
wb1 sot package sot-23
465B
BC847
GSM1800
LP2951
MRF18090AS
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MRF18085A
Abstract: AN1955 GSM1800 MRF18085ALSR3 MRF18085AR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3
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MRF18085ALSR3
MRF18085AR3
MRF18085A
AN1955
GSM1800
MRF18085ALSR3
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MRF18085A
Abstract: AN1032 AN1938 GSM1800 motorola application note amplifier power power rf transistor study
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1938/D AN1938 Sensitivity of High Power RF Transistors to Source and Output Loads Freescale Semiconductor, Inc. Prepared by: Béatrice Branger and Olivier Lembeye
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AN1938/D
AN1938
MRF18085A
AN1032
AN1938
GSM1800
motorola application note amplifier power
power rf
transistor study
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