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    1878 TRANSISTOR Search Results

    1878 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1878 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH3L10

    Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795
    Text: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)


    Original     		PDF ITO-220 2SC4310 O-220 TH3L10 c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795

    U893BS

    Abstract: U832BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR
    Text: U832BS 3-GHz Frequency Divider Description U832BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. Features Benefits D U832BS divides by 2


    Original     		PDF U832BS U832BS D-74025 02-Oct-98 U893BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR

    U832BS

    Abstract: D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC
    Text: U832BS 3-GHz Frequency Divider Description U832BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. Features Benefits D U832BS divides by 2


    Original     		PDF U832BS U832BS D-74025 07-Jun-99 D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC

    U891BS

    Abstract: 1878 TRANSISTOR D 1878 TRANSISTOR U891 TRANSISTOR 7812 U893BSE U832BS 7812 ACT datasheet RS 7812 U834BS
    Text: U832BS / U834BS 3-GHz Frequency Divider Description U832BS and U834BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. D U832BS divides by 2


    Original     		PDF U832BS U834BS U834BS U834BS) D-74025 27-Jan-97 U891BS 1878 TRANSISTOR D 1878 TRANSISTOR U891 TRANSISTOR 7812 U893BSE 7812 ACT datasheet RS 7812

    D 1878 TRANSISTOR

    Abstract: TRANSISTOR B 834 7812 pin out U834BS Telefunken u 690 ic 7848 Transistor 834 pin diagram of three pin ic 7812 7812 MAX INPUT VOLTAGE U834B
    Text: U 832 BS-FP U 834 BS-FP TELEFUNKEN Semiconductors 3-GHz Frequency Divider Description U 832 BS and U 834 BS use TELEFUNKEN’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application.


    Original     		PDF D-74025 D 1878 TRANSISTOR TRANSISTOR B 834 7812 pin out U834BS Telefunken u 690 ic 7848 Transistor 834 pin diagram of three pin ic 7812 7812 MAX INPUT VOLTAGE U834B

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


    Original     		PDF OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24

    kc 2462

    Abstract: ED36 symposium ED-36 gunn diode datasheet Betel d 1878 transistors A102
    Text: ADI Reliability Handbook Table XII. 1200 ؎500 ppm 38 @ 90% C.I. ELFR FIT Rate No Failures Occurred in Other Stress Tests Conducted, e.g., HAST, T/C, etc. The ppm figure obtained in Table XII was at the time of qualification and based on a limited sample size. Recent figures based on statistically valid sample sizes indicate that the ELFR is running at less


    Original     		PDF

    2N6758

    Abstract: 2N6902 QPL-19500
    Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan     		PDF 2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500

    BOW83

    Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
    Text: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited. UK • AUGUST 1878 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D • 150 W at 2S°C Case Temperature


    OCR Scan     		PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BOW83 BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d

    23A18

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors E-pack SMD E-pack (Lead type) ITO-220 Bipolar transistors HSV series Bipolar transistors Absolute Maximum Ratings Type No. Electrical Characteristics VcEO VcBO VcEO V ebo Ic Ib Pt Tstg Tj [V] [V] [V ] [A ] [A ]


    OCR Scan     		PDF ITO-220 23A1876 SC4978 ITO-220 23A18

    tf s 544 a

    Abstract: 2sc4978 2sc497
    Text: Low Saturation Voltage Sw itching Transistors L S V series Bipolar transistors Parts No. EIAJ No. Absolute Maximum Ratings V cbo VCEO V eb o lc Ib Pt [V] [V] [V] [A] [A] [W ] -5 1796 -7 1679 -5 -60 -7 1600 -12 1601 -15 2SC4668 7 4669 10 4148 7 60 7 40 12 4151


    OCR Scan     		PDF 2SA1795 2SC4668 2SA1876 2SC4978 ITO-220 IT0-220 tf s 544 a 2sc497

    Untitled

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)


    OCR Scan     		PDF ITO-220 2SA1795 Fig79-3 2SA1876 2SC4978 ITO-220

    SM 4151

    Abstract: 2sc497
    Text: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo


    OCR Scan     		PDF ITO-220 2SA1795 2SC4668 P1880 2SC4978 Fig78-3 SM 4151 2sc497

    2sa1876

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]


    OCR Scan     		PDF 2SA1795 2SC4668 2SA1876 2SC4978 Fig79-3

    Untitled

    Abstract: No abstract text available
    Text: bbS3^31 DDaSa^fi 126 • APX N AUER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E » 7 V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.


    OCR Scan     		PDF PMBTA92 PMBTA93

    TO-92variant

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)


    OCR Scan     		PDF OT54variant O-92variant) O-220AB) OT96-1 OT137-1 T0-220 OT186A O-220) OT223 OT226 TO-92variant

    k-band gaas schottky diode

    Abstract: transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES
    Text: SIEMENS HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 1870 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 1870 1870 1871 1871


    OCR Scan     		PDF BAS40, BXY42, BFY180, BFY193, BFY405, CFY25, CFY66, CLY29, CLY27, HPAC140 k-band gaas schottky diode transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES

    SGSP256

    Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
    Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156

    2SC1871

    Abstract: n 1895 1878 TRANSISTOR 2SA893
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF frc-25 2SC1871 n 1895 1878 TRANSISTOR 2SA893

    D 1878 TRANSISTOR

    Abstract: No abstract text available
    Text: TtP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS CopyrlaW 0 1997, Power Innovations Llmltsd. UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 • D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102


    OCR Scan     		PDF TtP105, TIP106, TIP107 TIP100, TIP101 TIP102 O-220 T1P105 TIP106 TIP105 D 1878 TRANSISTOR

    BDW740

    Abstract: BDW748 B0W74B D 1878 TRANSISTOR BOW74C
    Text: BDW74, BDW74A, BDW74B, BOW74C, BDW74D PNP SILICON POWER DARLINGTONS CopyilgW 0 1997. Power Innovations UmHed, UK AUG UST 1978 - REVISED M ARCH 1997 Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D TO-220 PACKAGE TOP VIEW 80 W at 25°C Case Temperature


    OCR Scan     		PDF BDW74, BDW74A, BDW74B, BOW74C, BDW74D BDW73, BDW73A, BDW73B, BDW73C BDW73D BDW740 BDW748 B0W74B D 1878 TRANSISTOR BOW74C

    lmd18245

    Abstract: stepper motor driver full bridge 6A 230v dc motor drive circuit diagram 4000 watts power amplifier circuit diagram LMD18245T TA15A 12 dc to 8v dc chopper electrical diagrams 12V BIPOLAR STEPPER MOTOR LT1234 12v DC SERVO MOTOR CONTROL circuit 2A
    Text: N a t i o n a l LMD18245 & S e m i c o n d u c t o r LMD18245 3A, 55V DMOS Full-Bridge Motor Driver General Description Features The LMD18245 full-bridge power amplifier incorporates all the circuit blocks required to drive and control current In a brushed type DC motor or one phase of a bipolar stepper


    OCR Scan     		PDF LMD18245 LMD18245 DTb30b b50112M stepper motor driver full bridge 6A 230v dc motor drive circuit diagram 4000 watts power amplifier circuit diagram LMD18245T TA15A 12 dc to 8v dc chopper electrical diagrams 12V BIPOLAR STEPPER MOTOR LT1234 12v DC SERVO MOTOR CONTROL circuit 2A

    c4460

    Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
    Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4


    OCR Scan     		PDF 1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895

    MSC 5010

    Abstract: Microwave Semiconductors MIL883 leak
    Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and


    OCR Scan     		PDF