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    E1751E20

    Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features


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    PDF EDJ2108DEBG-MQ 2133Mbps) EDJ2116DEBG-MQ EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) E1751E20 EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L

    j2108

    Abstract: EDJ2116DEBG-JQ EDJ2108DEBG-JQ EDJ2108DEBG EDJ2116DEBG DDR3-1866L persistent write 96-ball FBGA Elpida DDR3 DDR3 2G 1866 elpida
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization:  32M words × 8 bits × 8 banks (EDJ2108DEBG)  16M words × 16 bits × 8 banks (EDJ2116DEBG)


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    PDF EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) 78-ball 96-ball j2108 EDJ2116DEBG-JQ EDJ2108DEBG-JQ EDJ2108DEBG EDJ2116DEBG DDR3-1866L persistent write 96-ball FBGA Elpida DDR3 DDR3 2G 1866 elpida

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization: ⎯ 32M words × 8 bits × 8 banks (EDJ2108DEBG) ⎯ 16M words × 16 bits × 8 banks (EDJ2116DEBG)


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    PDF EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) 78-ball 96-ball

    DDR3-1866

    Abstract: IS46TR DDR3-1600 IS43TR16640A DDR3 IS43TR16128A IS43TR16640 DDR3 timing parameters IS43TR82560A 128Mx16
    Text: DDR3 SDRAM Up to 1866Mbps data rate ► Applications: • Telecom/Networking Access Nodes PON OLT, DSLAM, CMTS, Wireless Aggregation Nodes Switches and Routers Packet Optical Transport Network Storage • Automotive Infotainment Telematics Driver Information Systems


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    PDF 1866Mbps 96-ball 78-ball IS43TR16640A IS43TR81280A IS43TR16128A IS43TR82560A 64Mx16 128Mx8 128Mx16 DDR3-1866 IS46TR DDR3-1600 DDR3 IS43TR16640 DDR3 timing parameters

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


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    PDF EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: M392B5670GB0-CF8
    Text: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC M392B5670GB0-CF8

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64

    M471B5173

    Abstract: No abstract text available
    Text: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M471B5173CB0 M471B1G73CB0 204pin 78FBGA estoppel512M K4B4G0846C 512Mx8 1Gx64 M471B5173

    K4B4G0446D-MC

    Abstract: k4b4g0446d M393B5270DH0
    Text: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


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    PDF M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin 78FBGA K4B4G0446D-MC k4b4g0446d

    M378B5273EB0

    Abstract: K4B2G0846E-BC
    Text: Rev. 1.0, Jan. 2012 M378B5773EB0 M391B5773EB0 M378B5273EB0 M391B5273EB0 240pin Unbuffered DIMM based on 2Gb E-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M378B5773EB0 M391B5773EB0 M378B5273EB0 M391B5273EB0 240pin 78FBGA 256Mbx8 512Mx64/x72 M378/91B5273EB0 K4B2G0846E-BC K4B2G0846E-BC

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC

    JESD-79

    Abstract: ddr3 2133 jesd79 JESD79-3E
    Text: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM


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    PDF NT4GC72B89C0NL NT4GC72C89C0NL NT8GC72B4PC0NL NT8GC72C4PC0NL NT8GC72B8PC0NL NT8GC72C8PC0NL NT16GC72B4NC0NL NT16GC72C4NC0NL 512Mx72 1024Mx72 JESD-79 ddr3 2133 jesd79 JESD79-3E

    M378B

    Abstract: No abstract text available
    Text: Rev. 1.0, Aug. 2013 M378B5173DB0 M378B1G73DB0 240pin Unbuffered DIMM based on 4Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M378B5173DB0 M378B1G73DB0 240pin 78FBGA K4B4G0846D-BCï 512Mbx8 1Gx64 M378B

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF M471B1G73BH0 204pin 78FBGA 135mv 125mV) 512Mx8 1Gx64 K4B4G0846B

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin 78FBGA 128Mbx8 256Mx64/x72 M378/91B5673GB0 K4B1G0846G-BCâ

    m378b5773dh0-c

    Abstract: samsung ddr3 m378b5773dh0 K4B2G0846D-HC M378B5273DH0 spd M378
    Text: Rev. 1.4, Jul. 2011 M378B5773DH0 M391B5773DH0 M378B5273DH0 M391B5273DH0 240pin Unbuffered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M378B5773DH0 M391B5773DH0 M378B5273DH0 M391B5273DH0 240pin 78FBGA 256Mbx8 512Mx64/x72 M378/91B5273DH0 K4B2G0846D-HC m378b5773dh0-c samsung ddr3 K4B2G0846D-HC spd M378

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 16GB VLP Registered DDR3 SDRAM DIMM EBJ17RH4B6NA 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 18 pieces of 8G bits DDR3 SDRAM with DDP (FBGA)


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    PDF EBJ17RH4B6NA 2048M 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E2044E10

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 16GB Registered DDR3 SDRAM DIMM EBJ17RG4BFWD EBJ17RG4BFWP 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 36 pieces of 4G bits DDR3 SDRAM sealed in


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    PDF EBJ17RG4BFWD EBJ17RG4BFWP 2048M 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E2004E10

    K4W2G1646E-BC11

    Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
    Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K4W2G1646E 96FBGA K4W2G1646E-BC11 K4W2G1646E-BC1A k4w2g1646 K4W2G1646E

    NT5CB256M8bN-cg

    Abstract: calibration of dvm specifications NT5CB128M16BP-DI
    Text: 2Gb DDR3 SDRAM NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP Feature Table 1: CAS Latency Frequency -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Speed Bins Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max.


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    PDF NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12 DDR3-1600 DDR3-1866 NT5CB256M8bN-cg calibration of dvm specifications NT5CB128M16BP-DI

    M471B5273DH0

    Abstract: No abstract text available
    Text: Rev. 1.31. Dec. 2010 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M471B5773DH0 M471B5273DH0 204pin 78FBGA K4B2G0846D 256Mbx8 512Mx64 M471B5273DH0

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    PDF M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin 78FBGA 128Mbx8 256Mx64 K4B1G0846G-BC

    M378B5173CB0

    Abstract: m378b5173 Samsung ddr3 1600 SDRAM
    Text: Rev. 1.1, Apr. 2012 M378B5173CB0 240pin Unbuffered DIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF M378B5173CB0 240pin 78FBGA 125mV 135mv 125mV) 512Mbx8 K4B4G0846C-BC M378B5173CB0 m378b5173 Samsung ddr3 1600 SDRAM

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M393B1G70BH0 M393B1G73BH0 M393B2G70BH0 M393B2G73BH0 M393B4G70BM0 240pin Registered DIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


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    PDF M393B1G70BH0 M393B1G73BH0 M393B2G70BH0 M393B2G73BH0 M393B4G70BM0 240pin 78FBGA