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    1850 TRANSISTOR Search Results

    1850 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1850 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    transistor 1850

    Abstract: transistor s 623 1850 transistor
    Text: 1719-35 35 Watt - 28 Volts, Class C Microwave 1725 - 1850 MHz Preliminary Issue GENERAL DESCRIPTION CASE OUTLINE The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1725 -1850 MHz. This transistor is


    Original     		PDF 1850MHz, transistor 1850 transistor s 623 1850 transistor

    Untitled

    Abstract: No abstract text available
    Text: !" PRELIMINARY DATASHEET WS1413 Power Amplifier Module for CDMA PCS 1850-1910MHz DATASHEET (DEVICE : WS1413, 4x4 US-PCS PAM) Issued Date : January 29, 2005 1 Preliminary Information WM0501-14 !" PRODUCT DESCRIPTION WS1413 Power Amplifier Module for CDMA PCS (1850-1910MHz)


    Original     		PDF WS1413 1850-1910MHz) WS1413, WM0501-14 10pin 1850-1910MHz

    ACPM5

    Abstract: No abstract text available
    Text: ACPM-5202 UMTS Band2 1850-1910MHz 3x3mm Power Amplifier Module Data Sheet Description Features The ACPM-5202 is a fully matched 10-pin surface mount module developed for UMTS Band2. This power amplifier module operates in the 1850-1910MHz bandwidth. The


    Original     		PDF ACPM-5202 1850-1910MHz) ACPM-5202 10-pin 1850-1910MHz 28dBm Rel99) 50ohm ACPM5

    1718-32L

    Abstract: No abstract text available
    Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier


    Original     		PDF 1718-32L 1718-32L

    smd transistor rc1

    Abstract: SMD MARKING CODE g25 SMD Transistor g25 ACPM5 AVAGO PA LTE
    Text: ACPM-5002-TR1 Multimode PA - UMTS Band2 and CDMA PCS 1850-1915MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5002-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band2 (1850-1910MHz)


    Original     		PDF ACPM-5002-TR1 1850-1915MHz) ACPM-5002-TR1 10-pin 1850-1910MHz) 50ohm AV02-2477EN smd transistor rc1 SMD MARKING CODE g25 SMD Transistor g25 ACPM5 AVAGO PA LTE

    100 watt transistor

    Abstract: No abstract text available
    Text: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF 1850MHz, 100 watt transistor

    CX77107

    Abstract: ACP1H
    Text: DATA SHEET CX77107: PA Module for CDMA / PCS 1850–1910 MHz The CX77107 Power Amplifier Module (PAM) is a fully matched 10-pin surface mount module developed for Personal Communications Service (PCS) and Wireless Local Loop (WLL) applications. This small and efficient Power Amplifier packs full 1850–1910 MHz


    Original     		PDF CX77107: CX77107 10-pin ACP1H

    capacitor 226 20V

    Abstract: ECJ-1VB1H102K RMPA2265 SN63 SN96
    Text: RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description Features The RMPA2265 power amplifier module PAM is designed for WCDMA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to


    Original     		PDF RMPA2265 RMPA2265 capacitor 226 20V ECJ-1VB1H102K SN63 SN96

    umts uplink

    Abstract: No abstract text available
    Text: ACPM-5202 UMTS Band2 1850-1910MHz 3x3mm Power Amplifier Module Data Sheet Description The ACPM-5202 is a fully matched 10-pin surface mount module developed for UMTS Band2. This power amplifier module operates in the 1850-1910MHz bandwidth. The ACPM-5202 meets stringent UMTS linearity requirements


    Original     		PDF ACPM-5202 1850-1910MHz) ACPM-5202 10-pin 1850-1910MHz 28dBm Rel99) 50ohm umts uplink

    LME49830

    Abstract: an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 AN-1850 SNAA058B
    Text: Application Report SNAA058B – July 2008 – Revised May 2013 AN-1850 LME49830TB Ultra-High Fidelity High Power Amplifier Reference Design .


    Original     		PDF SNAA058B AN-1850 LME49830TB LME49830 an1850 150W TRANSISTOR AUDIO AMPLIFIER LM49830 SNAA058B

    Untitled

    Abstract: No abstract text available
    Text: Model 511075 COAXIAL RESONATOR OSCILLATOR 1850 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Maximum Ratings Voltage Tuning Option Specifications CHARACTERISTIC TYPICAL


    Original     		PDF

    MLO81100-01810

    Abstract: No abstract text available
    Text: Preliminary Specifications Surface Mount Voltage Controlled Oscillator PCS 1770 - 1850 MHz MLO81100-01810 V1.00 LSM1 Package Features ● ● ● ● Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Highly Linear Tuning 4.0 12.7 11.8


    Original     		PDF MLO81100-01810 MLO81100-01810

    TRANSISTOR SMD MARKING CODE WM

    Abstract: TRANSISTOR WM 9 smd electrolytic capacitors marking
    Text: !" PRELIMINARY DATASHEET WS2411 Power Amplifier Module for UMTS1900 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS2411, 4x4 UMTS1900 PAM) Issued Date : September 8th, 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0409-06 !" PRODUCT DESCRIPTION


    Original     		PDF WS2411 UMTS1900 1850-1910MHz) WS2411, UMTS1900 WM-0409-06 TRANSISTOR SMD MARKING CODE WM TRANSISTOR WM 9 smd electrolytic capacitors marking

    SKY77157

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SUMMARY SKY77157: Smart System PA Module for CDMA / PCS 1850–1910 MHz APPLICATIONS • Personal Communications Services (PCS) • Full U.S. PCS coverage • Wireless local loop (WLL) FEATURES • Low voltage positive bias supply


    Original     		PDF SKY77157: 10-pin IS95/CDMA2000/EVDO SKY77157 10-pin

    murata REEL label lot number

    Abstract: TRANSISTOR SMD MARKING CODE WM ROHM polystyrene capacitor WS1401 smd transistor marking PA IPC-7711 smd rf transistor marking SMT code WM
    Text: !" PRELIMINARY DATASHEET WS1401 Power Amplifier Module for CDMA PCS 1850-1910MHz DATASHEET (DEVICE : WS1401, 3x3 US PCS PAM) Issued Date : January 21, 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM-0501-10 !" PRODUCT DESCRIPTION WS1401


    Original     		PDF WS1401 1850-1910MHz) WS1401, WM-0501-10 1850-1910MHz murata REEL label lot number TRANSISTOR SMD MARKING CODE WM ROHM polystyrene capacitor smd transistor marking PA IPC-7711 smd rf transistor marking SMT code WM

    IPC-7721

    Abstract: J-STD-033 PCB JEDEC J-STD-033 TAPE AND REEL IPC-7711
    Text: !" PRELIMINARY DATASHEET WS1411 Power Amplifier Module for CDMA PCS 1850-1910MHz PRELIMINARY DATASHEET (DEVICE : WS1411, 4x4 US PCS PAM) Issued Date : July 5th , 2004 S. W. Paek Director, Module Group 1 Preliminary Information WM-0407-03 !" PRODUCT DESCRIPTION


    Original     		PDF WS1411 1850-1910MHz) WS1411, WM-0407-03 10pin 1850-1910MHz IPC-7721 J-STD-033 PCB JEDEC J-STD-033 TAPE AND REEL IPC-7711

    Untitled

    Abstract: No abstract text available
    Text: 1719-8 8 Watts, 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-8 is a COMMON BASE transistor capable of providing 8 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: • POUT 8.0 W  Gain 6.0 dB min.  Silicon Nitride Passivated


    Original     		PDF PTB20156B PTB20156B

    transistor 1850

    Abstract: No abstract text available
    Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP


    Original     		PDF 1-877-GOLDMOS 1301-PTB transistor 1850

    RF POWER TRANSISTOR NPN

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP


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    N4050

    Abstract: 1350 transistor
    Text: ERICSSON $ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Preliminary Key Features Description • • • • • The 20156 is a class C, NPN, common base RF PowerTransistor intended for 22 VDC operation across the 1350 -1850 MHz frequency band. It is rated at 8 Watts minimum output power


    OCR Scan     		PDF