JCIQ-1880D
Abstract: No abstract text available
Text: I&Q Demodulator JCIQ-1880D Typical Performance Data FREQUENCY LO=1842MHz MHz RF I&Q 1842.30 1842.55 1842.79 1843.04 1843.29 1843.54 1843.78 1844.03 1844.20 1844.53 1844.77 1845.02 1845.27 1845.52 1845.76 1846.01 1846.26 1846.51 1846.75 1847.00 0.30 0.55
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JCIQ-1880D
1842MHz
JCIQ-1880D
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1090Mhz LNA
Abstract: GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 MAX2338 measurement rf gsm
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lnas, low noice amplifiers, mixer, rf, rfic, cdma, gsm, wireless, rf ics, front end ic Sep 07, 2001 APPLICATION NOTE 797 MAX2338 LNAs and Downconverters Optimized for GSM Front-End REP027 Abstract: The MAX2338 front-end IC is tuned to support GSM and DCS operation at 942MHz and 1842MHz. A
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MAX2338
REP027)
942MHz
1842MHz.
270MHz
com/an797
MAX2338:
AN797,
1090Mhz LNA
GSM LNA
AN797
GSM ic
REP027
gsm amplifier schematic
APP797
measurement rf gsm
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X3DC18E2S
Abstract: No abstract text available
Text: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier
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X3DC18E2S
X3DC18E2S
RF-35,
RO4350
20log
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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Untitled
Abstract: No abstract text available
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
10mil
EDS-105436
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SPB2026Z
Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
Text: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
10mil
EDS-105436
SPB-2026Z
SPB2026Z
TL 188 TRANSISTOR PIN DIAGRAM
SPB-2026
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BP65R1505S112
Abstract: No abstract text available
Text: DIELECTRIC FILTER SPECIFICATION China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: BP65R1505S112 www.sipatsaw.com 1. MODEL NUMBER MODEL NUMBER. CUSTOMER PART NO. BP65R1505S112 2. TEST CONDITION 2-1 TYPICAL CONDITION
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BP65R1505S112
BP65R1505S112
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MQE9
Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265A
HD155121F
48-pin
MQE9
74674
HITEC 623
Hitachi DSA002752
GSM53
Nippon capacitors
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315 MHz Power Amplifier
Abstract: No abstract text available
Text: Model X3DC18E2S RevA Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as
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X3DC18E2S
X3DC18E2S
RF-35,
RO4350
20log
315 MHz Power Amplifier
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GSM400
Abstract: RF8889A RFMD ASM RF8889 RFMD LTE Band 40
Text: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features GSM Rx3 TRX1 Broadband Performance Suitable for all Cellular Modulation Schemes up to
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RF8889A
SP10T
RF8889A
B13-2Fo,
DS111017
GSM400
RFMD ASM
RF8889
RFMD LTE Band 40
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GSM 1800 receiver
Abstract: image rejection mixer X Band GSM1800 G1800 typ35 G900 GSM900 mixer X band
Text: 9091 Data Sheet Version 1 9091: PCS 1800/900 Downconverter DESCRIPTION The 9091 integrates a 900MHz Low Noise Amplifier and a 1800MHz Low Noise Amplifier driving image-reject, downconversion mixers, generating a common IF output of about 240 MHz. The 9091 also integrates a
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900MHz
1800MHz
2200MHz
GSM1800
942MHz,
450MHz
2088MHz,
246MHz
typ40/min35
1847MHz,
GSM 1800 receiver
image rejection mixer X Band
GSM1800
G1800
typ35
G900
GSM900
mixer X band
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Untitled
Abstract: No abstract text available
Text: Model X3DC18E2S Rev B Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as
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X3DC18E2S
X3DC18E2S
20log
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HD155121F
Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265A
HD155121F
48-pin
Common PCN Handset Specification Phase
74674
GSM LNA
BFP420
GSM ic
gsm transceiver
transceiver gsm
MA 68698
pcn 8.5
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Untitled
Abstract: No abstract text available
Text: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features GSM Rx3 Broadband Performance Suitable for all Cellular Modulation Schemes up to 2.7GHz TRX1 Excellent Insertion Loss and
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RF8889A
SP10T
SP10T
B13-2Fo,
DS111017
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SPB-2026
Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Text: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
SPB-2026Z
SOF-26
EDS-105436
SPB-2026
zo 107
TL 188 TRANSISTOR PIN DIAGRAM
SPB2026Z
SPB2026
0722
ER39
ML200D
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SPB-2026Z
Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated
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SPB2026Z
SPB2026Z
SOF-26
SPB2026ZSQ
SPB2026ZSR
SPB2026ZPCK1
SPB-2026Z
SPB-2026ZSR
ER39
s-parameters
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LTC6946-3
Abstract: LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06
Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise
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LTC6946
37GHz
226dBc/Hz
274dBc/Hz
157dBc/Hz
600MHz
LTC5590/LTC5591
LTC5592/LTC5593
LTC5569
LTC6946-3
LTC6946
1810MHz VCO 16 pin
TB 112MA
sdi 0818
LTC5541
QFN-28
LTC6946IUFD-1
CI LM 4800
Marking Code h06
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NGK Spark Plug
Abstract: NTK 20 mHZ ntk filter 2808 transistor DCS1800 MFE1842BBU22 SPARK S21L
Text: COMMUNICATION MEDIA COMPONENTS GROUP NGK SPARK PLUG CO.,LTD. 2808 IWASAKI, KOMAKI-SHI, AICHI, JAPAN 485-8510 Dielectric Filter with Attenuation Pole P / N : MFE1842BBU22 Application : DCS1800 Rx Features 1.High attenuation for using pole in stop band. 2.Extreme mechanical stability
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MFE1842BBU22
DCS1800
S11logMAG
S21logMAG
1842MHz
400MHz
NGK Spark Plug
NTK 20 mHZ
ntk filter
2808 transistor
MFE1842BBU22
SPARK
S21L
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SPB2026Z
Abstract: SPB-2026Z SPB-2026 SPB-2026Z-EVB3 ML200D SOF-26 spb2026zevb3 0.7GHz to 2.2GHz InGaP AMPLIFIER 1805-1880MHz power amplifier EDS-105436
Text: SPB-2026Z SPB-2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: SOF-26 Product Description Features RFMD’s SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar
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SPB-2026Z
SOF-26
SPB-2026Z
SPB2026Z
SPB-2026Z-EVB1
1805-1880MHz
SPB-2026Z-EVB2
1930-1990MHz
SPB-2026
SPB-2026Z-EVB3
ML200D
SOF-26
spb2026zevb3
0.7GHz to 2.2GHz InGaP AMPLIFIER
1805-1880MHz power amplifier
EDS-105436
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SPB-2026Z
Abstract: SPB-2026 2W High Linearity Amplifier spb2026z
Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is
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SPB-2026Z
10mil
EDS-105436
SPB-2026Z
SPB-2026
2W High Linearity Amplifier
spb2026z
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Hitachi DSA002743
Abstract: Nippon capacitors
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265
HD155121F
48-pin
Hitachi DSA002743
Nippon capacitors
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LTC5541
Abstract: LTC5588-1 LTC6946
Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise
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LTC6946
37GHz
226dBc/Hz
274dBc/Hz
157dBc/Hz
600MHz
LTC5590/LTC5591
LTC5592/LTC5593
LTC5569
LTC5541
LTC5588-1
LTC6946
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: 1. OUTLINE FILTER TDFM3A-1890D-16 DIMENSION 2. ELECTRICAL CHARACTERISTICS Center Frequency Fo Passband Width Input Output Impedance Insertion Loss in Passband Ripple in Passband V.S.W.R in Passband Attenuation : : :
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TDFM3A-1890D-16
1674MHz
1842MHz
00MHz
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Untitled
Abstract: No abstract text available
Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF
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HD155121F
ADE-207-265
HD155121F
48-pin
cop12
cop22
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