Untitled
Abstract: No abstract text available
Text: TGF2018 180um Discrete GaAs pHEMT Applications • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features Functional Block Diagram Frequency Range: DC - 20 GHz
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TGF2018
180um
TGF2018
180-Micron
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Untitled
Abstract: No abstract text available
Text: TGF2018 180um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz
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TGF2018
180um
TGF2018
180-Micron
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0.3mm pitch csp package
Abstract: 0.3mm pitch package bga 0.3mm pitch BGA jp smd code AN100926-26-JP AN-1112 micro pitch BGA ALIVH ic micro AN1112
Text: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。
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AN-1112
0.3mm pitch csp package
0.3mm pitch package bga
0.3mm pitch BGA
jp smd code
AN100926-26-JP
AN-1112
micro pitch BGA
ALIVH
ic micro
AN1112
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k351
Abstract: common-drain
Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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K3519PQ-XH
K3519PQ-XH
180um
470ea
k351
common-drain
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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Untitled
Abstract: No abstract text available
Text: FPF3003 IntelliMAX Full Functional Input Power Path Management Switch for Dual-Battery Portable System Features Description • • The FPF3003 is a single-chip solution for dual-battery power-path switching, including integrated P-channel switches and analog control features. The input voltage
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FPF3003
FPF3003
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AN-1112
Abstract: 0.3mm pitch BGA ALIVH 0.3mm pitch csp package SMD CODE AN-1112 national
Text: ご注意 ：日本語のア プ リ ケーシ ョ ン ・ ノ ー ト は参考資料 と し て提供 し てお り 内容が 最新で ない場合があ り ます。 製品のご使用に際 し ては、 必ず最新の英文ア プ リ ケーシ ョ ン ・ ノ ー ト を ご確認 く だ さ い。
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AN-1112
AN-1112
0.3mm pitch BGA
ALIVH
0.3mm pitch csp package
SMD CODE
AN-1112 national
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Untitled
Abstract: No abstract text available
Text: 2KG028075JL_Datasheet 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION ¾ 2KG028075JL is a high speed switching diode chip for plastic package fabricated in planar technology. ¾ The chip can be encapsulated as 1N4148 switching diode. ¾ The chip has several thicknesses for choice, the top
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2KG028075JL
1N4148
2KG028XXX
2KG028075JL
2KG028075JL-155
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Untitled
Abstract: No abstract text available
Text: OPA8745H Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8745H
--------------------180um
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ED-714IRP
Abstract: No abstract text available
Text: ED-714IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-714IRP
105um
320um
180um
335um
x335um
ED-714IRP
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ED-712IRV
Abstract: No abstract text available
Text: ED-712IRV AlGaAs/AlGaAs Highspeed IrED Chips 880 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-712IRV
120um
270um
180um
285um
x285um
ED-712IRV
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ed-914irp
Abstract: No abstract text available
Text: ED-914IRP AlGaAs/AlGaAs Highspeed IrED Chips 850 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-914IRP
105um
320um
180um
335um
335um
100mA
ed-914irp
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ED-712IRP
Abstract: No abstract text available
Text: ED-712IRP AlGaAs/AlGaAs Highspeed IrED Chips 865 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • High speed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-712IRP
120um
270um
180um
285um
x285um
ED-712IRP
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Untitled
Abstract: No abstract text available
Text: 外形寸法図・参考パターン寸法 ●SOD-123A Unit: mm •外形寸法図 1.50-1.70 0.45-0.65 0.08-0.15 3.55-3.85 2.60-2.80 0-0.1 1.05-1.25 Cathode Bar SOD-123A Unit: mm ■参考パターンレイアウト 2.0 1.5 1.5 はんだ厚： 180 m 参考）
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OD-123A
000pcs/reel
OD123A
OD123A
UL94V-0
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.
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K3519PQ-XH
K3519PQ-XH
180um
470ea
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Untitled
Abstract: No abstract text available
Text: 2ES032XXXJL 2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION ¾ 2ES032XXXJL series are transient voltage suppressors diode chips for plastic package that fabricated in silicon epitaxial planar technology; ¾ Excellent clamping capability; ¾ Fast response time ;
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2ES032XXXJL
2ES032XXXJL
2ES032XXX
2ES032025JL
2ES032033JL
2ES032050JL
2ES032060JL
2ES032070JL
2ES032120JL
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mitsubishi APD
Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
Text: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD839C4
PD839C4
10MHz-1
488G/s,
180um
mitsubishi APD
PD8* APD
Photo Diodes
tia amplifier ghz
mitsubishi receiver
"photo diodes"
APD 1550nm
PD839C4 equivalent
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HI155G1S02X
Abstract: HI155G1S14X HI155G HI155G1S07X
Text: High Intensity Pulsed Laser Diodes 1550 HI-Series FEATURES • High intensity output • Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability APPLICATIONS Eye safe range finding
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1550-hi-series
HI155G1S02X
HI155G1S14X
HI155G
HI155G1S07X
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LSI LOGIC
Abstract: 700UM
Text: Chip Planning w/ Avant! Planet -PL Workbook G11 Copyright LSI Logic Corporation 1999, 2000 All Rights Reserved. Chip Planning w/ Avant! Planet -PL Software Training Workbook (G11) Produced by the Customer Education Group May 2000 Copyright LSI Logic Corporation 1999, 2000. All rights reserved.
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yb 0d
Abstract: No abstract text available
Text: Chip EMI Filters Chip EMI Filters Type: EXCCET • Features ■ Recommended Applications ● Rated current 2 A max. ● Eight capacitance values in a wide range, related to the noise frequency ● Suitable for narrow pitch insertion ● Suitable for applications requiring thin design
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Untitled
Abstract: No abstract text available
Text: ED-714IR AlGaAs/AlGaAs Highspeed IrED Chips 870 nm Features : Typical Applications : • AlGaAs/AlGaAs wafer • Very high power • Highspeed • High performance • Superior thermal stability • IrDA • Encoder • Data Communication Outline Dimensions : Unit: um
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ED-714IR
105um
320um
180um
335um
335um
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION — CONFIDENTIAL AND PROPRIETARY — DO NOT DISTRIBUTE FPF3003 IntelliMAX Full Functional Input Power Path Management Switch for Dual-Battery Portable System Features Description • • The FPF3003 is a single-chip solution for dual-battery
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FPF3003
FPF3003
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Photo Diodes
Abstract: tia amplifier ghz PD739C13 mitsubishi receiver
Text: MITSUBISHI PHOTO DIODES PD739C13 InGaAs PIN PHOTO DIODES PD739C13 Feature DESCRIPTION PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD739C13
PD739C13
488G/s,
180um
Photo Diodes
tia amplifier ghz
mitsubishi receiver
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D739A
Abstract: PD739A13
Text: MITSUBIS]HI ELECTR] C CORPORATION * DATE: SPECIFICATION -SHEET July 20,’00 PREPARED BY: S.Funaba CHECKED BY: S.Minamihara Y.Tanaka APPROVED BY: A.Takemoto 1. TYPE : PD739A13 2. APPLICATOIN : OPTICAL COMMUNICATION 3. STRUCTURE : <>20 \im InGaAs PIN PHOTODIODE with PRE-AMPLIFIER
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PD739A13
G480698
739A13
54GHz
D739A
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