180NM MOS Search Results

180NM MOS Result Highlights (6)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

180NM MOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
180NM Abstract: 180-nm 180NM mos 100nM 90 nm CMOS 180nm be Text: Scaling Challenges and Device Design Requirements for High Performance Sub-50nm Gate Length Planar CMOS Transistors T. Ghani, K. Mistry, P. Packan#, S. Thompson, M. Stettler#, S. Tyagi, M. Bohr Portland Technology Development, #TCAD Intel Corporation 2000 VLSI Symposium	Original	PDF	Sub-50nm 180nm 100nm 15-20nm 100nm 180-nm 180NM mos 90 nm CMOS 180nm be
180NM mos Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Global Engineering Solutions Highlights offers a leading-edge CMOS image sensor CIMG technology based on Standard features: Optional features: IBM’s industry-standard 180-nm CMOS	Original	PDF	180-nm TGD01612-USEN-07 180NM mos 180NM IBM 180NM aluminium 6351 IBM efuse polysilicon resistor International CMOS Technology
180-nm Abstract: 180NM mos CMOS/0.18-um CMOS technology Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Semiconductor solutions offers a Highlights leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features: •	Original	PDF	180-nm TGD01612-USEN-02 180NM mos CMOS/0.18-um CMOS technology
130nm CMOS Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR Text: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:	Original	PDF	130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
intel flash date code marking Abstract: date code marking intel strataflash js28f320j3d75 PC28F320J3D75 28f320j3d JS28F320J3D-75 Intel StrataFlash Memory j3 28F320J3C 130nm RC28F320J3D-75 Text: Product Change Notification 105488 - 00 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no	Original	PDF	ma3D75 RC28F320J3D75 TE28F320J3D75 100pc 144pc intel flash date code marking date code marking intel strataflash js28f320j3d75 PC28F320J3D75 28f320j3d JS28F320J3D-75 Intel StrataFlash Memory j3 28F320J3C 130nm RC28F320J3D-75
AN 1213 Abstract: NIKON Asahi Glass Text: 157 nm Mask Technology Development Status Update Giang Dao*a, Ronald Kuseb, Kevin Orvek a, Eric Panninga, Roswitha Remlingb, Jun Fei Zhenga, Munehiko Tsubosakic, and Fu-Chang Loa Intel Corporation, aComponents Research, bIntel Mask Operations, Santa Clara, CA 95052	Original	PDF	157-nm 100-nm 70-nm 157nm 180-nm 157-nm AN 1213 NIKON Asahi Glass
SPARC64 Abstract: 180NM 400M GS21 sparc64 gp Text: SPARC64 VII Fujitsu’s Next Generation Quad-Core Processor August 26, 2008 Takumi Maruyama LSI Development Division Next Generation Technical Computing Unit Fujitsu Limited All Rights Reserved,Copyright FUJITSU LIMITED 2008 Fujitsu Processor Development	Original	PDF	SPARC64TM 130nm 180nm 150nm SPARC64 180nm GS8800B SPARC64 400M GS21 sparc64 gp
180NM Abstract: FPGA 456 CS3112 fpga implementation using rs(255,239) IESS-308 code CS3110 02HEX DS3110 N1 ASIC K3025 Text: CS3110/12 TM Reed-Solomon Encoders Virtual Components for the Converging World The CS3110 and CS3112 Reed-Solomon encoders are designed to provide high performance solutions for a broad range of applications requiring forward error correction. These application specific cores are developed for high	Original	PDF	CS3110/12 CS3110 CS3112 CS3110) CS3112) DS3110 180NM FPGA 456 fpga implementation using rs(255,239) IESS-308 code 02HEX N1 ASIC K3025
180NM nmos Abstract: Pmos transistor 180nm CMOS transistor 180NM n 410 transistor 180-nm Text: 100 nm Gate Length High Performance / Low Power CMOS Transistor Structure T. Ghani, S. Ahmed, P. Aminzadeh*, J. Bielefeld, P. Charvat, C. Chu, M. Harper, P. Jacob, C. Jan, J. Kavalieros, C. Kenyon, R. Nagisetty, P. Packan# , J. Sebastian, M. Taylor, J. Tsai, S. Tyagi, S. Yang , M. Bohr	Original	PDF	100nm 180nm 180NM nmos Pmos transistor 180nm CMOS transistor n 410 transistor 180-nm
TSMC 180nm dual port sram Abstract: TSMC 90nm sram tsmc 180nm sram voltage regulator I2C 10GBASE-T TSMC 90nm flash energy consumption in DVS TN1010 120C ARM926EJ-S Text: PowerWise Adaptive Voltage Scaling AVS Technology Webinar Rick Zarr, PowerWise® Technologist Joy Taylor, Marketing Manager Feb 25, 2009 Webinar Objectives • Review power consumption of digital subsystems in various applications • Discuss PowerWise® Adaptive Voltage Scaling (AVS)	Original	PDF
ST10F275 Abstract: ST10F296 ST10F276 180NM ST10F2xx ST10F275 QFP ST10F273 ST10F251 st10 family TQFP100 Text: ST10 family 16-bit microcontrollers for automotive applications June 2006 www.st.com 16-bit microcontroller for automotive applications The ST10 family, STMicroelectronics’ industry-standard 16-bit microcontrollers, provide pin-compatible alternatives with enhanced scalable Flash	Original	PDF	16-bit BRST10AU0306 ST10F275 ST10F296 ST10F276 180NM ST10F2xx ST10F275 QFP ST10F273 ST10F251 st10 family TQFP100
180NM cmos process parameters Abstract: circuit diagram for Design and Fabrication of 5V 130nm CMOS design of digital PLL using 180nm technology of digital PLL using 180nm technology 180NM rs232 schematic diagram Text: RadHard ASIC Products RadHard Mixed-Signal ASICs Datasheet July 2007 INTRODUCTION SEU-immune to less than 1.0E-12 errors/bits-day available using special library cells Aeroflex Colorado Springs’ RadHard Mixed-Signal ASICs combine high-density, high-speed digital logic with analog and	Original	PDF	0E-12 180NM cmos process parameters circuit diagram for Design and Fabrication of 5V 130nm CMOS design of digital PLL using 180nm technology of digital PLL using 180nm technology 180NM rs232 schematic diagram
MPC823 Abstract: MPC823E MPC850 MPC852T MPC855T MPC857DSL MPC857T MPC859DSL MPC859T MPC860 Text: Integrated Communications Processors PowerQUICC I and PowerQUICC II Families Overview Freescale Semiconductor's PowerQUICC architecture contains a PowerPC™ processing core together with a communications processor module CPM and system interface unit (SIU).	Original	PDF	MPC860, 2X10/100, MPC866 MPC862 MPC860 MPC850 10BaseT, MPC8280 MPC8272 MPC8266 MPC823 MPC823E MPC850 MPC852T MPC855T MPC857DSL MPC857T MPC859DSL MPC859T MPC860
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Abstract: 180NM IBM Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE	Original	PDF	11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM

pressure sensor MATLAB program Abstract: CCGA 472 CCGA -CG 472 actel 1020 datasheet fpga radiation mixed signal fpga datasheet RH1020 actel rad pressure sensor 90nm cmos Text: A passion for performance. Digital and Mixed-Signal custom, semi-custom and off-the-shelf designs Guaranteed radiation performance QML-V, QML-Q, military, medical, industrial grades We connect the real world to the digital world RadHard ASICs Digital and Mixed-Signal	Original	PDF	25-year pressure sensor MATLAB program CCGA 472 CCGA -CG 472 actel 1020 datasheet fpga radiation mixed signal fpga datasheet RH1020 actel rad pressure sensor 90nm cmos
CCGA 472 Abstract: pressure sensor MATLAB program CCGA -CG 472 rtax250 fpga radiation mixed signal fpga datasheet RH1280 RH1020 Text: A passion for performance. Digital and Mixed-Signal custom, semi-custom, off-the-shelf designs Guaranteed radiation performance QML-V, QML-Q, military, medical, industrial grades Category 1A Trusted Accreditation We connect the real world to the digital world	Original	PDF	25-year CCGA 472 pressure sensor MATLAB program CCGA -CG 472 rtax250 fpga radiation mixed signal fpga datasheet RH1280 RH1020
14 pin ic 7404 datasheet Abstract: 306667 TPS79918 TPS79918DDC 1Q 2006 Analog Applications Journal Text: Power Management Texas Instruments Incorporated TPS79918 RF LDO supports migration to StrataFlash Embedded Memory P30 By Michael Day (Email: m-day@ti.com) Power Management Products/Portable Power dc/dc Applications Introduction The Texas Instruments (TI) TPS79918 low dropout (LDO)	Original	PDF	TPS79918 180-nm 130-nm SLYT233 14 pin ic 7404 datasheet 306667 TPS79918DDC 1Q 2006 Analog Applications Journal
180NM cmos process parameters Abstract: 180NM nmos Germanium audio Amplifier diagram "BJT Transistors" spice high frequency SiGe bicmos transistor circuit diagram for simple RF transceiver BJT Transistors CMOS Stacked RF 130NM cmos process parameters AUDIO MOSFET POWER AMPLIFIER SCHEMATIC Text: Motivation for RF Integration W H I T E P A P E R Motivation for RF Integration Introduction While CMOS technology has made great strides in its ability to fabricate radio frequency RF circuitry, many RF chip designers have yet to take advantage of this	Original	PDF	WFS-FS-21329-9/2008 180NM cmos process parameters 180NM nmos Germanium audio Amplifier diagram "BJT Transistors" spice high frequency SiGe bicmos transistor circuit diagram for simple RF transceiver BJT Transistors CMOS Stacked RF 130NM cmos process parameters AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
verilog code for 2-d discrete wavelet transform Abstract: wavelet transform verilog vhdl code for discrete wavelet transform jpeg encoder vhdl code source code verilog for park transformation dwt verilog code verilog source code for park transformation xilinx dwt image compression verilog code for dwt transform verilog code for amba ahb bus Text: CS6510 TM JPEG2000 Encoder Virtual Components for the Converging World The CS6510 JPEG2000 Encoder is a high performance application specific solution enabling leading edge image compression and transmission applications. The core is fully compliant with the ISO/IEC 15444-1 JPEG2000	Original	PDF	CS6510 JPEG2000 CS6510 JPEG2000 720x480) DS6510 verilog code for 2-d discrete wavelet transform wavelet transform verilog vhdl code for discrete wavelet transform jpeg encoder vhdl code source code verilog for park transformation dwt verilog code verilog source code for park transformation xilinx dwt image compression verilog code for dwt transform verilog code for amba ahb bus
TAG 9344 Abstract: car Speed Sensor using RFID CS200 FUJITSU FRAM CAR HORN Specification CMOS image sensor fingerprint circuit wimax soc CS100 CS200A CS300 Text: 2005 Executive Briefing Fujitsu Microelectronics America, Inc Program Introduction Emi Igarashi Corporate Overview Kazuyuki Kawauchi Business Update Keith Horn Summary / Q&A Keith Horn 09/20/2005, Executive Briefing 2 Fujitsu Microelectronics America, Inc. 2005	Original	PDF	10GbE, IDB1394, TAG 9344 car Speed Sensor using RFID CS200 FUJITSU FRAM CAR HORN Specification CMOS image sensor fingerprint circuit wimax soc CS100 CS200A CS300
0201 capacitor footprint Abstract: No abstract text available Text: Smallest and Lowest Profile Tantalum Capacitors T. Zednicek , I. Paukert, I. Zednickova AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Tel.: +420 465 358 111, Fax: +420 465 358 701, e-mail: tomas.zednicek@eur.avx.com ABSTRACT Tantalum capacitor technology has been recognized for its parametric stability and	Original	PDF
transistor MTBF Abstract: METASTABILITY synchronizer megafunction altera MTBF SIGNAL PATH designer dcfifo Text: White Paper Understanding Metastability in FPGAs This white paper describes metastability in FPGAs, why it happens, and how it can cause design failures. It explains how metastability MTBF is calculated, and highlights how various device and design parameters affect the result.	Original	PDF
180NM Abstract: FPGA programmable switch capacitor HCM Series of digital PLL using 180nm technology signal path designer Text: White Paper Generating Functionally Equivalent FPGAs and ASICs With a Single Set of RTL and Synthesis/Timing Constraints Electronic systems designers use FPGAs for their prototype implementations, taking advantage of the devices’ reprogrammability to validate hardware and software. Once the design is ready for volume production, designers are	Original	PDF
CGY2108GS Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2 Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services	Original	PDF	500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2

180NM MOS Search Results

180NM MOS Result Highlights (6)

180NM MOS Datasheets Context Search

180NM

180NM mos

180-nm

130nm CMOS

intel flash date code marking

AN 1213

SPARC64

180NM

180NM nmos

TSMC 180nm dual port sram

ST10F275

180NM cmos process parameters

MPC823

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

pressure sensor MATLAB program

CCGA 472

14 pin ic 7404 datasheet

180NM cmos process parameters

verilog code for 2-d discrete wavelet transform

TAG 9344

0201 capacitor footprint

transistor MTBF

180NM

CGY2108GS