z12 smd code sot23
Abstract: SMD MARKING code 613 sot23 smd code Z70 SMD marking Z4 SMD MARKING CODE Z2 smd code z16 Y11 smd code smd z17 z67 smd marking Z58
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX84 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 18 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation:
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M3D088
BZX84
BZX84-A)
BZX84-B)
BZX84-C)
BZX84-C11
BZX84-C12
BZX84-C13
BZX84-C6V8
BZX84-C15
z12 smd code sot23
SMD MARKING code 613 sot23
smd code Z70
SMD marking Z4
SMD MARKING CODE Z2
smd code z16
Y11 smd code
smd z17
z67 smd
marking Z58
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Untitled
Abstract: No abstract text available
Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV16UN
O-236AB)
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Zener diode smd marking code .18 SOT23
Abstract: Zener diode smd marking code w1
Text: COMCHIP SMD Zener Diode SMD Diodes Specialist CZRT5222B-G Thru. CZRT5256B-G Voltage: 2.5 to 30 Volts Power: 300 mWatts RoHS Device Features SOT-23 - Planar die construction. - 300mW power dissipation on FR-4 PCB. 0.119 3.00 0.110(2.80) 3 - Ideally suited for automated assembly
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CZRT5222B-G
CZRT5256B-G
OT-23
300mW
OT-23,
MIL-STD202G
QW-BZ013
CZRT5223B-G
Zener diode smd marking code .18 SOT23
Zener diode smd marking code w1
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smd code marking WV
Abstract: BBY39
Text: BBY39 UHF variable capacitance double diode Rev. 02 — 30 June 2004 Product data sheet 1. Product profile 1.1 General description The BBY39 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.
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BBY39
BBY39
sym032
smd code marking WV
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BB804
Abstract: smd code marking C8
Text: BB804 VHF variable capacitance double diode Rev. 03 — 1 July 2004 Product data sheet 1. Product profile 1.1 General description The BB804 is a variable capacitance double diode with a common cathode, fabricated in planar technology and encapsulated in the SOT23 small plastic SMD package.
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BB804
BB804
sym032
smd code marking C8
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KJ3 smd code
Abstract: No abstract text available
Text: SMD Zener Diode CZRT5222B-G Thru. CZRT5256B-G Voltage: 2.5 to 30 Volts Power: 300 mWatts RoHS Device Features SOT-23 - Planar die construction. - 300mW power dissipation on FR-4 PCB. 0.119 3.00 0.110(2.80) 3 - Ideally suited for automated assembly process.
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CZRT5222B-G
CZRT5256B-G
OT-23
300mW
OT-23,
MIL-STD202G
QW-BZ013
CZRT5223B-G
KJ3 smd code
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ZENER 5V2
Abstract: No abstract text available
Text: SMD Zener Diode CZRT5222B-HF Thru. CZRT5256B-HF Voltage: 2.5 to 30 Volts Power: 300 mWatts RoHS Device Halogen Free SOT-23 Features - Planar die construction. 0.118 3.00 0.110(2.80) 3 - 300mW power dissipation on FR-4 PCB. 0.055(1.40) 0.047(1.20) - Ideally suited for automated assembly
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CZRT5222B-HF
CZRT5256B-HF
OT-23
300mW
OT-23,
MIL-STD202G
QW-JZ002
CZRT5222B-HF
ZENER 5V2
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CZRT5233B-G
Abstract: CZRT5222B-G
Text: SMD Zener Diode CZRT5222B-G Thru. CZRT5256B-G Voltage: 2.5 to 30 Volts Power: 300 mWatts RoHS Device Features SOT-23 - Planar die construction. - 300mW power dissipation on FR-4 PCB. 0.119 3.00 0.110(2.80) 3 - Ideally suited for automated assembly process.
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CZRT5222B-G
CZRT5256B-G
OT-23
300mW
OT-23,
MIL-STD202G
QW-BZ013
CZRT5223B-G
CZRT5233B-G
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDTR0324V0U-HF RoHS Device Halogen Free Features SOT-23F-3P - Uni-directional ESD protection 0.118 3.00 0.110(2.80) - Working voltage: 24V - High component density. 0.100(2.50) 0.090(2.30) Mechanical data
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CPDTR0324V0U-HF
OT-23F-3P
OT-23F-3P
MIL-STD-750
23F-3P
QW-G7040
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDTR035V0H-HF RoHS Device Halogen Free SOT-23F-3P Features 0.118 3.00 0.110(2.80) -Bi-directional ESD protection -IEC 61000-4-5 (surge) ; IPP=7A -IEC 61000-4-2 (ESD) ; ±30KV(contact) 0.100(2.50) 0.090(2.30)
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CPDTR035V0H-HF
OT-23F-3P
OT-23F-3P
MIL-STD-750
Electr23F-3P
QW-G7050
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDTR0324V0U-HF RoHS Device Features Halogen free. Uni-directional ESD protection SOT-23F-3P IEC 61000-4-2 15kV(contact), 20kV(air). 0.118(3.00) 0.110(2.80) Working voltage: 24V High component density. Mechanical data
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CPDTR0324V0U-HF
OT-23F-3P
OT-23F-3P
MIL-STD-750
QW-G7040
CPDTR0312V0U-HF
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDTR0324V0U-HF RoHS Device Halogen Free Features SOT-23F-3P - Uni-directional ESD protection 0.118 3.00 0.110(2.80) - Working voltage: 24V - High component density. 0.100(2.50) 0.090(2.30) Mechanical data
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CPDTR0324V0U-HF
OT-23F-3P
OT-23F-3P
MIL-STD-750
23F-3P
QW-G7040
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDTR0324V0U-HF RoHS Device Features Halogen free. Uni-directional ESD protection SOT-23F-3P IEC 61000-4-2 15kV(contact), 20kV(air). 0.118(3.00) 0.110(2.80) Working voltage: 24V High component density. Mechanical data
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CPDTR0324V0U-HF
OT-23F-3P
OT-23F-3P
MIL-STD-750
QW-G7040
CPDTR0312V0U-HF
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CPDTR0324V0U-HF RoHS Device Features Halogen free. Uni-directional ESD protection SOT-23F-3P IEC 61000-4-2 15kV(contact), 20kV(air). 0.118(3.00) 0.110(2.80) Working voltage: 24V High component density. Mechanical data
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CPDTR0324V0U-HF
OT-23F-3P
OT-23F-3P
MIL-STD-750
QW-G7040
CPDTR0324V0U-HF
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65UN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV50UPE
O-236AB)
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TRANSISTOR SMD MARKING CODE p1
Abstract: TRANSISTOR SMD MARKING CODE 2A A O TRANSISTOR SMD MARKING CODE Transistor 03 smd smd transistor MARKING 2A smd transistor code 2a TRANSISTOR SMD MARKING CODE MARKING SMD TRANSISTOR W1 TRANSISTOR SMD MARKING M Y 2A transistor smd SOT-23
Text: General Purpose Transistor SMD Diodes Specialist MMBT3906-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) 1 2
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MMBT3906-G
OT-23
MMBT3904-G
XXX2-02
XXX1-03
XXX2-03
XXX1-04
XXX2-04
XXX1-05
XXX2-05
TRANSISTOR SMD MARKING CODE p1
TRANSISTOR SMD MARKING CODE 2A
A O TRANSISTOR SMD MARKING CODE
Transistor 03 smd
smd transistor MARKING 2A
smd transistor code 2a
TRANSISTOR SMD MARKING CODE
MARKING SMD TRANSISTOR W1
TRANSISTOR SMD MARKING M Y
2A transistor smd SOT-23
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Untitled
Abstract: No abstract text available
Text: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0P RoHs Device Features ESD Protect for 4 high-speed I/O channels. SOT-23-6 IEC61000-4-2 ESD ±14kV(Contact),±18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. 0.119(3.02) 0.111(2.82) Working voltage: 5V
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CSRS065V0P
OT-23-6
IEC61000-4-2
IEC61000-4-4
OT-23-6
MIL-STD-750
QW-BP018
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marking 62z SOT23
Abstract: 24Z SOT23 smd code marking 18Y marking 2AX
Text: SMD 3-Terminal SOT-23 Zener - 200mW 200mW Marking Code Part No. TZT2.0W TZT2.0XW TZT2.0ZW TZT2.2W TZT2.2XW TZT2.2ZW TZT2.4W TZT2.4XW TZT2.4ZW TZT2.7W TZT2.7XW TZT2.7ZW TZT3.0W TZT3.0XW TZT3.0ZW TZT3.3W TZT3.3XW TZT3.3ZW TZT3.6W TZT3.6XW TZT3.6ZW TZT3.9W TZT3.9XW
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OT-23
200mW
marking 62z SOT23
24Z SOT23
smd code marking 18Y
marking 2AX
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smd transistor w1a
Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the
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CX-49G,
CX-40F
HC-49/U
HC-49U-S
31-Dec-04
CX-49L
smd transistor w1a
smd transistor w1a 25
W1A smd transistor
smd transistor gz
smd transistor marking A14
SMD W1A transistor
AVX tantalum marking
MARKING w1a SOT-23
smd transistor w1a 50
marking code NJ SMD Transistor
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P5D SMD
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PMBD914 High-speed diode FEATURES DESCRIPTION • Small plastic SMD package The PMBD914 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package. • High switching speed: max. 4 ns
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PMBD914
PMBD914
BD914
P5D SMD
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