Untitled
Abstract: No abstract text available
Text: VLMRGB343. Vishay Semiconductors Multi SMD LED RGB FEATURES • High brightness tricolor SMD LED • RGB individual control • Compact package outline e3 • Black surface • Qualified according to JEDEC moisture sensitivity level 2 • Compatible to IR reflow soldering
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VLMRGB343.
AEC-Q101
2002/95/EC
2002/96/EC
JESD22-A114-B
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TLHE/G/K/P510. Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle
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TLHE/G/K/P510.
08-Apr-05
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PDF
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SOT 143 footprint
Abstract: VMN-PT9045-0711 SCHEMATIC L
Text: Model MPD/ MPDA Key Benefits • 1:1 Resistance ratio 1 K to 100 K standard offering • Ratio Match: ± 0.05 % • Ratio Tracking: ± 2 ppm/ºC • Current Noise: < - 30 dB • Voltage Coefficient: < 0.1 ppm/V • Three resistor series connected customs available
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OT-143
17-Sep-07
VMN-PT9045-0711
SOT 143 footprint
VMN-PT9045-0711
SCHEMATIC L
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PDF
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TLHP5100
Abstract: TLHE5100 TLHG5100 TLHG5101 TLHG5102 TLHK51 TLHK5100 TLHP5101 TLHP5102
Text: TLHE/G/K/P510. Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused FEATURES • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle
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Original
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TLHE/G/K/P510.
18-Jul-08
TLHP5100
TLHE5100
TLHG5100
TLHG5101
TLHG5102
TLHK51
TLHK5100
TLHP5101
TLHP5102
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PDF
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BD 669
Abstract: transistor BD 140 BD 149 transistor XB1008-BD XB1008-BD-000V XB1008-BD-EV1 DM6030HK TS3332LD
Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias
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Original
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B1008-BD
17-Sep-07
MIL-STD-883
XB1008-BD-000V
XB1008-BD-EV1
XB1008
BD 669
transistor BD 140
BD 149 transistor
XB1008-BD
XB1008-BD-000V
XB1008-BD-EV1
DM6030HK
TS3332LD
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PDF
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a1710
Abstract: No abstract text available
Text: SPICE Device Model SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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SiA421DJ
S-71914Rev.
17-Sep-07
a1710
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PDF
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Untitled
Abstract: No abstract text available
Text: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package FEATURES • • • • • • • • 19222 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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TLHB420.
08-Apr-05
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PDF
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Buffer Amplifier Ghz
Abstract: B1007 bd 25 701 BD 329 DM6030HK TS3332LD XB1007-BD XB1007-BD-000V XB1007-BD-EV1
Text: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier B1007-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias
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Original
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B1007-BD
17-Sep-07
MIL-STD-883
XB1007-BD-000V
XB1007-BD-EV1
XB1007
Buffer Amplifier Ghz
B1007
bd 25 701
BD 329
DM6030HK
TS3332LD
XB1007-BD
XB1007-BD-000V
XB1007-BD-EV1
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PDF
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TLHB420
Abstract: TLHB4200 TLHB4201 blue led vishay
Text: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package FEATURES • • • • • • • • 19222 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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Original
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TLHB420.
18-Jul-08
TLHB420
TLHB4200
TLHB4201
blue led vishay
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PDF
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Si3458BDV
Abstract: No abstract text available
Text: SPICE Device Model Si3458BDV Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3458BDV
18-Jul-08
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PDF
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1535 SD
Abstract: Si4890BDY
Text: SPICE Device Model Si4890BDY Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4890BDY
18-Jul-08
1535 SD
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PDF
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TLHG5200
Abstract: TLHG5201 TLHG5205 TLHR5200 TLHR5201 TLHR5205 TLHY5200 TLHY5201 TLHY5205
Text: TLHG/R/Y520. Vishay Semiconductors High Efficiency LED, ∅ 5 mm Tinted Non-Diffused Package FEATURES • Choice of three bright colors • Standard T-1¾ package • Small mechanical tolerances • Suitable for DC and high peak current • Small viewing angle
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Original
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TLHG/R/Y520.
18-Jul-08
TLHG5200
TLHG5201
TLHG5205
TLHR5200
TLHR5201
TLHR5205
TLHY5200
TLHY5201
TLHY5205
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PDF
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Untitled
Abstract: No abstract text available
Text: TLHG/R/Y520. Vishay Semiconductors High Efficiency LED, ∅ 5 mm Tinted Non-Diffused Package FEATURES • Choice of three bright colors • Standard T-1¾ package • Small mechanical tolerances • Suitable for DC and high peak current • Small viewing angle
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Original
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TLHG/R/Y520.
08-Apr-05
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PDF
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tray 8 x 8
Abstract: shinon ST-bg0 FBGA package tray dwg 25A1 D257 SECTION tray 25 x 25 ST-BG080810TJ-1 ASTM-D-257
Text: Package Information Vishay Siliconix FBGA MLF 8 x 8 MM PACKAGE TRAY C 322.6 315.0 ST-BG080810TJ-1 PPE 92.1 B A 12.7 * 150 °C MAX. 10.35 12.80 FBGA 8 x 8 1.0 mm A TRAY MADE IN JAPAN 135.9 * SHINON B see Detail 25.4 3.8 1 2.5 11.0 8.25 7.40 7.0 6.1 20° (3°) 3
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ST-BG080810TJ-1
T-07542
17-Sep-07
tray 8 x 8
shinon
ST-bg0
FBGA package tray dwg
25A1
D257
SECTION
tray 25 x 25
ST-BG080810TJ-1
ASTM-D-257
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PDF
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SOT 143 footprint
Abstract: sot-143 vishay
Text: SURFACE MOUNT NETWORKS MPD/MPDA Vishay Thin Film Molded, SOT-143 Resistor Network FEATURES • • • • • Lead Pb -free available Tight Ratio Tolerances to 0.05 % ± 2 ppm Tracking Standard Values Stocked Standard SOT-143 Footprint Pb-free Available
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Original
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OT-143
18-Jul-08
SOT 143 footprint
sot-143 vishay
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PDF
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Si7316DN
Abstract: si7316
Text: SPICE Device Model Si7316DN Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7316DN
18-Jul-08
si7316
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PDF
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Si7186DP
Abstract: No abstract text available
Text: SPICE Device Model Si7186DP Vishay Siliconix N-Channel 80V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7186DP
18-Jul-08
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PDF
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mosfet 0018
Abstract: No abstract text available
Text: SPICE Device Model SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM90N03-2m2P
18-Jul-08
mosfet 0018
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PDF
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Si4660DY
Abstract: No abstract text available
Text: SPICE Device Model Si4660DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4660DY
18-Jul-08
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PDF
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UM0097 User manual STR71x firmware library About this manual
Abstract: ADC12 M24C08 TQFP144 TIM_TO_IT 71XT 71XM
Text: UM0097 User manual STR71x firmware library Introduction About this manual This document is the STR71x firmware library user manual. It describes the STR71x peripheral firmware library: a collection of routines, data structures and macros that cover the features of each peripheral.
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UM0097
STR71x
STR71x
UM0097 User manual STR71x firmware library About this manual
ADC12
M24C08
TQFP144
TIM_TO_IT
71XT
71XM
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PDF
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TLHB420
Abstract: TLHB4200 TLHB4201
Text: TLHB420. Vishay Semiconductors High Efficiency Blue LED, ∅ 3 mm Tinted Non-Diffused Package FEATURES • • • • • • • • 19222 DESCRIPTION This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
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Original
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TLHB420.
11-Mar-11
TLHB420
TLHB4200
TLHB4201
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PDF
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V30150C
Abstract: 89047
Text: New Product V30150C, VF30150C & VI30150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses
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V30150C,
VF30150C
VI30150C
O-220AB
ITO-220AB
O-220AB,
ITO-220AB
O-262AA
V30150C
V30150C
89047
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. LPU COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION 5 4 2 3 - BY TYCO ELECTRONICS CORPORATION. REVISIONS DIST ALL RIGHTS RESERVED. 00 P LTR 03 DESCRIPTION R E V IS E D PER E C O - 07- 021880 DATE DWN APVD 17SEP07 DH RP HOUSING: POLYESTER, GRAY. UL 9 4 V - 0 .
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OCR Scan
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17SEP07
290CT04
18SEP2007
US077239
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR P U B L IC A T IO N ALL B Y TYCO E L E C T R O N IC S R IG H T S RESERVED. C O R P O R A T IO N . "A’ 1.65 [.065] D A A TRAVEL MAX 2.48 [.097] TRAVEL TYP 3.00 [.1 18 ] 3.99 5.00 [.197] r [-1 5 7 ]
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OCR Scan
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STS260PC
STS220PC
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PDF
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