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    17E PART MARKING Search Results

    17E PART MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    17E PART MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TDC 1013

    Abstract: z80 sio d217e FL404 17e PART MARKING Z84C4X Z84C4X08 Z84C4X04
    Text: ZILOG INC 17E D Zilog TJfl4D43 001Q54A h Product S pecification 'T - S Z - > _ 3 - 0 3 January 1989 Z8440/1/2/4, Z84C40/1/2/3/4 NMOS/ CMOS Z80 SIO Serial Input/Output Controller FEATURES \ ^ • Two independent full-duplex channels, with separate control and status lines for modems or other devices.


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    TJfl4D43 001Q54A Z8440/1/2/4, Z84C40/1/2/3/4 NMOSZ0844x04- MHzZ0844x06 Z84C4X04 Z84C4x06 Z84C4x08 TDC 1013 z80 sio d217e FL404 17e PART MARKING Z84C4X PDF

    Untitled

    Abstract: No abstract text available
    Text: Z I L OG INC 17E D • ^ “104043 0011*173 4 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features Low power CMOS. Pin compatible to NMOS versions. Two independent, 0 to 2.5M bit/second, full-duplex


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    68-Pin 84-Pin PDF

    E0823

    Abstract: z603
    Text: ZI LO G INC 17E D • G012004 1 U ^34043 Z8030 Z-BUS SCC/ Z8530 SCC Serial Communications Controller October 1987 Features ■ Two independent, 0 to 2M bit/second, fullduplex channels, each with a separate crystal oscillator, baud rate generator, and Digital


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    G012004 Z8030 Z8530 68-Pin 84-Pin E0823 z603 PDF

    Z8671

    Abstract: z8671 zilog Microprocessor z8671 Z8671 basic w5T marking R/S3C9004/P9004/C9014/Z8671
    Text: 17E D ZILOG INC -V-T- '•& tâCC:^ *?£'&•&:« tV>>*W5t ^04043 000^413 □ »rodùct Specification' Z8671 Z8 MCU with BASIC/Debug Interpreter _ , -T - q o \ - i i - o 7 June 1987 • The Z8671 MCU is a complete microcomputer


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    Z8671 Z8671-8 z8671 zilog Microprocessor z8671 Z8671 basic w5T marking R/S3C9004/P9004/C9014/Z8671 PDF

    5ts8

    Abstract: IN SDLC PROTOCOL CRC-16 Z80C30 Z85C30
    Text: ZILOG INC 17E 3> T=1640Li3 0011173 4 T - 7 5 '3 7 '¿ > 7 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features • Low power CMOS. ■ Pin compatible to NMOS versions. ■ T w o independent, 0 to 2.5M bit/second, fu ll-du p le x


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    1B4043 Z80C30 Z85C30 68-Pin 0070c 84-Pin 5ts8 IN SDLC PROTOCOL CRC-16 PDF

    Z8000

    Abstract: z851
    Text: Z I L O G I NC 17E D • =HfiMÜ43 G01 2 1 3 7 b ZS516/Z9516 DMA Transfer Controller DTC October 1988 FEATURES Optional automatic chaining of operations ■ Two independent multi-function channels ■ Transfer Modes: single, demand dedicated with bus hold, demand dedicated with bus release, demand


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    ZS516/Z9516 68-Pin 84-Pin Z8000 z851 PDF

    0082ZR14-3

    Abstract: stetron relay 765NR 0056ZR14 47ZR 0068ZR07-1 ZR 720 relay stetron 0033ZR07-1 0039ZR05-0
    Text: STETRON INTERN ATION AL INC 17E D • Metal Oxide Varistors fibSmSD DGD01?b Ü ■ Applications Applications of MNR Varistors As mentioned in the introduction, MNRs have many and varied applications, some of which are listed below for easy reference: •Telephone and PABX equipment.


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    QGDQ17b microprocessorR10-5 05S0NR10-5 0700NR10-5 0765NR10-5 0800NR10-5 0850NR10-5 1000NR10-5 0082ZR14-3 stetron relay 765NR 0056ZR14 47ZR 0068ZR07-1 ZR 720 relay stetron 0033ZR07-1 0039ZR05-0 PDF

    bcm2835

    Abstract: BROADCOM BCM2835
    Text: 1 1 1 1 1 1 BCM2835 ARM Peripherals 2012 Broadcom Corporation. All rights reserved Broadcom Europe Ltd. 406 Science Park Milton Road Cambridge CB4 0WW Table of Contents 11 Introduction 1.11 Overview 1.21 Address map 1.2.11 Diagrammatic overview 1.2.21 ARM virtual addresses standard Linux kernel only


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    BCM2835 BROADCOM BCM2835 PDF

    smd diode wv4

    Abstract: SMD wv4 Diode BFT smd wv4 diode wv4 smd marking WV4 smd diode WV1 IRL540 IRL540S J-10
    Text: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling


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    IRL540 T0-220 O-220 smd diode wv4 SMD wv4 Diode BFT smd wv4 diode wv4 smd marking WV4 smd diode WV1 IRL540S J-10 PDF

    marking WV4

    Abstract: smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd
    Text: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling


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    IRL540 T0-220 O-220 marking WV4 smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd PDF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA100TS120UPbF E78996 2002/95/EC 11-Mar-11 GA100TS120UPBF PDF

    GA100TS120UPBF

    Abstract: No abstract text available
    Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA100TS120UPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GA100TS120UPBF PDF

    RG2 DIODE

    Abstract: t4vd
    Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA75TS120UPbF E78996 2002/95/EC 11-Mar-11 RG2 DIODE t4vd PDF

    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 GA100NA60UP PDF

    Untitled

    Abstract: No abstract text available
    Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA75TS120UPbF E78996 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA75TS120UPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    application notes igbt induction heating

    Abstract: VS-GA100NA60UP
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    VS-GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 application notes igbt induction heating VS-GA100NA60UP PDF

    application notes igbt induction heating

    Abstract: VS-GA100NA60UP
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    VS-GA100NA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 application notes igbt induction heating VS-GA100NA60UP PDF

    VS-GA100TS120UPBF

    Abstract: No abstract text available
    Text: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode


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    VS-GA100TS120UPbF E78996 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VS-GA100TS120UPBF PDF

    TRANSISTOR TC 100

    Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


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    GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 TRANSISTOR TC 100 GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf PDF

    mosfet 4456

    Abstract: p94a marking U6 SOD123 GRM55RR
    Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and


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    SC4910A/B features302A SC4911 TSSOP-20 SC4910A/B TSSOP-20 mosfet 4456 p94a marking U6 SOD123 GRM55RR PDF

    CT7343

    Abstract: pa016 SC1302
    Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and


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    SC4910A/B features302A SC4911 TSSOP-20 SC4910A/B TSSOP-20 CT7343 pa016 SC1302 PDF

    C3678

    Abstract: PA016 2C16
    Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and


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    SC4910A/B features8208T 31414R SC4911 TSSOP-20 SC4910A/B TSSOP-20 C3678 PA016 2C16 PDF

    4456 mosfet

    Abstract: mosfet 4456 SC4910 SC4910A SC4201 SC4910AITSTR SC4910B SC4910BITSTR c4910 SC4911
    Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and


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    SC4910A/B SC4910A/B PA0168 8208T 31414R TSSOP-20 SC4911 4456 mosfet mosfet 4456 SC4910 SC4910A SC4201 SC4910AITSTR SC4910B SC4910BITSTR c4910 SC4911 PDF