bcm2835
Abstract: BROADCOM BCM2835
Text: 1 1 1 1 1 1 BCM2835 ARM Peripherals 2012 Broadcom Corporation. All rights reserved Broadcom Europe Ltd. 406 Science Park Milton Road Cambridge CB4 0WW Table of Contents 11 Introduction 1.11 Overview 1.21 Address map 1.2.11 Diagrammatic overview 1.2.21 ARM virtual addresses standard Linux kernel only
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BCM2835
BROADCOM BCM2835
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
GA100TS120UPBF
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GA100TS120UPBF
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RG2 DIODE
Abstract: t4vd
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS120UPbF
E78996
2002/95/EC
11-Mar-11
RG2 DIODE
t4vd
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GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
GA100NA60UP
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width50s
Abstract: GA100TS120UPBF
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
11-Mar-11
width50s
GA100TS120UPBF
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS120UPbF
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA75TS120UPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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VS-GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
application notes igbt induction heating
VS-GA100NA60UP
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application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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Original
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PDF
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VS-GA100NA60UP
E78996
2002/95/EC
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
application notes igbt induction heating
VS-GA100NA60UP
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VS-GA100TS120UPBF
Abstract: No abstract text available
Text: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode
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Original
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PDF
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VS-GA100TS120UPbF
E78996
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-GA100TS120UPBF
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TRANSISTOR TC 100
Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
TRANSISTOR TC 100
GA100NA60UP
ga100na60
bipolar transistor td tr ts tf
6000uf
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mosfet 4456
Abstract: p94a marking U6 SOD123 GRM55RR
Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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SC4910A/B
features302A
SC4911
TSSOP-20
SC4910A/B
TSSOP-20
mosfet 4456
p94a
marking U6 SOD123
GRM55RR
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CT7343
Abstract: pa016 SC1302
Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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SC4910A/B
features302A
SC4911
TSSOP-20
SC4910A/B
TSSOP-20
CT7343
pa016
SC1302
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4456 mosfet
Abstract: mosfet 4456 SC4910 SC4910A SC4201 SC4910AITSTR SC4910B SC4910BITSTR c4910 SC4911
Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and
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SC4910A/B
SC4910A/B
PA0168
8208T
31414R
TSSOP-20
SC4911
4456 mosfet
mosfet 4456
SC4910
SC4910A
SC4201
SC4910AITSTR
SC4910B
SC4910BITSTR
c4910
SC4911
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TDC 1013
Abstract: z80 sio d217e FL404 17e PART MARKING Z84C4X Z84C4X08 Z84C4X04
Text: ZILOG INC 17E D Zilog TJfl4D43 001Q54A h Product S pecification 'T - S Z - > _ 3 - 0 3 January 1989 Z8440/1/2/4, Z84C40/1/2/3/4 NMOS/ CMOS Z80 SIO Serial Input/Output Controller FEATURES \ ^ • Two independent full-duplex channels, with separate control and status lines for modems or other devices.
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TJfl4D43
001Q54A
Z8440/1/2/4,
Z84C40/1/2/3/4
NMOSZ0844x04-
MHzZ0844x06
Z84C4X04
Z84C4x06
Z84C4x08
TDC 1013
z80 sio
d217e
FL404
17e PART MARKING
Z84C4X
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Untitled
Abstract: No abstract text available
Text: Z I L OG INC 17E D • ^ “104043 0011*173 4 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features Low power CMOS. Pin compatible to NMOS versions. Two independent, 0 to 2.5M bit/second, full-duplex
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68-Pin
84-Pin
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E0823
Abstract: z603
Text: ZI LO G INC 17E D • G012004 1 U ^34043 Z8030 Z-BUS SCC/ Z8530 SCC Serial Communications Controller October 1987 Features ■ Two independent, 0 to 2M bit/second, fullduplex channels, each with a separate crystal oscillator, baud rate generator, and Digital
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G012004
Z8030
Z8530
68-Pin
84-Pin
E0823
z603
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Z8671
Abstract: z8671 zilog Microprocessor z8671 Z8671 basic w5T marking R/S3C9004/P9004/C9014/Z8671
Text: 17E D ZILOG INC -V-T- '•& tâCC:^ *?£'&•&:« tV>>*W5t ^04043 000^413 □ »rodùct Specification' Z8671 Z8 MCU with BASIC/Debug Interpreter _ , -T - q o \ - i i - o 7 June 1987 • The Z8671 MCU is a complete microcomputer
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Z8671
Z8671-8
z8671 zilog
Microprocessor z8671
Z8671 basic
w5T marking
R/S3C9004/P9004/C9014/Z8671
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5ts8
Abstract: IN SDLC PROTOCOL CRC-16 Z80C30 Z85C30
Text: ZILOG INC 17E 3> T=1640Li3 0011173 4 T - 7 5 '3 7 '¿ > 7 October 1988 Z80C 30 C M O S Z - B U S S C C / Z 85C 30 C M O S SCC Serial ' Communications Controller Features • Low power CMOS. ■ Pin compatible to NMOS versions. ■ T w o independent, 0 to 2.5M bit/second, fu ll-du p le x
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1B4043
Z80C30
Z85C30
68-Pin
0070c
84-Pin
5ts8
IN SDLC PROTOCOL
CRC-16
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Z8000
Abstract: z851
Text: Z I L O G I NC 17E D • =HfiMÜ43 G01 2 1 3 7 b ZS516/Z9516 DMA Transfer Controller DTC October 1988 FEATURES Optional automatic chaining of operations ■ Two independent multi-function channels ■ Transfer Modes: single, demand dedicated with bus hold, demand dedicated with bus release, demand
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OCR Scan
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ZS516/Z9516
68-Pin
84-Pin
Z8000
z851
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0082ZR14-3
Abstract: stetron relay 765NR 0056ZR14 47ZR 0068ZR07-1 ZR 720 relay stetron 0033ZR07-1 0039ZR05-0
Text: STETRON INTERN ATION AL INC 17E D • Metal Oxide Varistors fibSmSD DGD01?b Ü ■ Applications Applications of MNR Varistors As mentioned in the introduction, MNRs have many and varied applications, some of which are listed below for easy reference: •Telephone and PABX equipment.
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QGDQ17b
microprocessorR10-5
05S0NR10-5
0700NR10-5
0765NR10-5
0800NR10-5
0850NR10-5
1000NR10-5
0082ZR14-3
stetron relay
765NR
0056ZR14
47ZR
0068ZR07-1
ZR 720 relay
stetron
0033ZR07-1
0039ZR05-0
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smd diode wv4
Abstract: SMD wv4 Diode BFT smd wv4 diode wv4 smd marking WV4 smd diode WV1 IRL540 IRL540S J-10
Text: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRL540
T0-220
O-220
smd diode wv4
SMD wv4
Diode BFT smd
wv4 diode
wv4 smd
marking WV4
smd diode WV1
IRL540S
J-10
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marking WV4
Abstract: smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd
Text: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRL540
T0-220
O-220
marking WV4
smd diode wv4
1RL540
SMD wv4
DIODE smd marking WV4
smd diode WV1
diode wv4
jb0 marking
DIODE 28A
Diode BFT smd
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