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    Untitled

    Abstract: No abstract text available
    Text: 123415678429ABCD58 123415678429ABCD58 1234546 1789ABCDBEF  4C457457DC7  234C25DC4E4E    F56 ! 6"6 6#" $$52%  17E &4C3F' 53 A48*  7CD45+4DCCBC54B4F565  A7+ 7$,C24 E x × 1B7F8BEF  10.1 Max.


    Original     		123415678429ABCD58 1789ABCDBEF 53C3C EC745 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO6408 20V N-Channel MOSFET General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use


    Original     		AO6408 AO6408 1789ABCD PDF