FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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SST174
Abstract: J174 J175 J176 J177 SST175 SST176 SST177 EQUIVALENT FOR J174
Text: J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176
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J/SST174/175/176/177
SST174
SST175
SST176
SST177
J/SST174
J/SST175
J/SST176
J/SST177
Elimina/175/176/177
SST174
J174
J175
J176
J177
SST175
SST176
SST177
EQUIVALENT FOR J174
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EQUIVALENT FOR J174
Abstract: SST174 SST177 an104 siliconix J174 J175 J176 J177 SST175 SST176
Text: J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176
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J/SST174/175/176/177
SST174
SST175
SST176
SST177
J/SST174
J/SST175
J/SST176
J/SST177
08-Apr-05
EQUIVALENT FOR J174
SST174
SST177
an104 siliconix
J174
J175
J176
J177
SST175
SST176
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J177
Abstract: SST177 SST174 SST176 VISHAY J177 "P-Channel JFETs" J177 equivalent J174 J175 J176
Text: J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176
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J/SST174/175/176/177
SST174
SST175
SST176
SST177
J/SST174
J/SST175
J/SST176
J/SST177
18-Jul-08
J177
SST177
SST174
SST176
VISHAY J177
"P-Channel JFETs"
J177 equivalent
J174
J175
J176
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Untitled
Abstract: No abstract text available
Text: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •
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O-220,
O-263,
O-220F,
O247AD,
O-247AC
SiHP21N60EF
SiHB21N60EF
SiHA21N60EF
SiHG21N60EF
SiHG47N60EF
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SUD50P04-40P
Abstract: S-80151Rev
Text: SPICE Device Model SUD50P04-40P Vishay Siliconix P-Channel 40-V D-S 150°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50P04-40P
18-Jul-08
SUD50P04-40P
S-80151Rev
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4561DY Vishay Siliconix N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4561DY
18-Jul-08
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SUD50NP04-77P
Abstract: No abstract text available
Text: SPICE Device Model SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50NP04-77P
18-Jul-08
SUD50NP04-77P
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Untitled
Abstract: No abstract text available
Text: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TO-220 FullPAK STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS 85/85 625 504 668 85 °C, 85 % RH FAIL PERCENTAGE 0.00 HAST 1090 109 000 130 C, 85 % RH
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O-220
M2003
15-May-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7780DP
S-81924-Rev.
25-Aug-08
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Si4925DY
Abstract: No abstract text available
Text: SPICE Device Model Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4925DY
0-to-10V
20-May-02
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SUP80N15-20L
Abstract: No abstract text available
Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP80N15-20L
0-to10V
11-Aug-03
SUP80N15-20L
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Si6924EDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6924EDQ
22-Aug-02
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SUM110P04-04L
Abstract: p-channel Mosfet 110A SUM110P04-04L SPICE Device Model
Text: SPICE Device Model SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110P04-04L
0-to-10V
27-Oct-03
SUM110P04-04L
p-channel Mosfet 110A
SUM110P04-04L SPICE Device Model
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SUP80N15-20L
Abstract: No abstract text available
Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP80N15-20L
S-71516Rev.
23-Jul-07
SUP80N15-20L
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SUP80N15-20L
Abstract: No abstract text available
Text: SPICE Device Model SUP80N15-20L Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP80N15-20L
12-Jun-04
SUP80N15-20L
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SUP90P06-09L
Abstract: No abstract text available
Text: SPICE Device Model SUP90P06-09L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP90P06-09L
capacita255
S-52635Rev.
02-Jan-06
SUP90P06-09L
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Si6544DQ
Abstract: Si6544DQ SPICE Device Model 72161
Text: SPICE Device Model Si6544DQ Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6544DQ
0-to-10V
19-Mar-03
Si6544DQ SPICE Device Model
72161
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Si4544DY
Abstract: No abstract text available
Text: SPICE Device Model Si4544DY Vishay Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4544DY
S-52396Rev.
21-Nov-05
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Si4544DY
Abstract: No abstract text available
Text: SPICE Device Model Si4544DY Vishay Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4544DY
07-May-01
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7780DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7780DP
18-Jul-08
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Si6924EDQ
Abstract: No abstract text available
Text: SPICE Device Model Si6924EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6924EDQ
18-Jul-08
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EQUIVALENT FOR J175
Abstract: 176 siliconix "P-Channel JFETs" Siliconix P-Channel JFETs P-Channel JFETs J177. P-CHANNEL. TO-92 equivalent SST174
Text: J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number VGS oH (V) rDS(on) Max (Q) •iHoff) Typ (pA) J/SST174 5 to 10 85 -1 0 25 J/SST175 3 to 6 125 -1 0 25 J/SST176 1 to 4
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OCR Scan
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J/SST174/175/176/177
SST174
SST175
SST176
SST177
J/SST174
J/SST175
J/SST176
J/SST177
S-04030--
EQUIVALENT FOR J175
176 siliconix
"P-Channel JFETs"
Siliconix P-Channel JFETs
P-Channel JFETs
J177. P-CHANNEL. TO-92 equivalent
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DV2840S
Abstract: DV2840W DV2840T DV2880 DV2820 dv2840 DV28120 lv 02a DV2810 SEMCO
Text: Siliconix N-Channel Enhancement Mode RF Power FETs FEATURES • In fin ite VSW R ■ N o Therm al Runaway ■ Broadband Capability Package T y p e T Package T y p e S Package T y p e W .500 SOE Flange .380 SOE Flange C -2 2 0 ■ Class A , B, C, D , E ■
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OCR Scan
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DV2840S
DV2840T
DV2840W
DV280S,
DV2810,
DV2820,
DV2880,
DV28120
0-35V
C-220
DV2840S
DV2840W
DV2840T
DV2880
DV2820
dv2840
DV28120
lv 02a
DV2810
SEMCO
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