U1ZB24
Abstract: diode code marking 220Y U1ZB330-Z U1ZB75 U1ZB200-Z 270z
Text: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.0 W z Zener Voltage : VZ = 6.8 V ~ 390 V z Surface Mounting Plastic Mold Package ABSOLUTE MAXIMUM RATINGS Ta = 25°C
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U1ZB390
U1ZB24
diode code marking 220Y
U1ZB330-Z
U1ZB75
U1ZB200-Z
270z
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U1ZB10
Abstract: U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB18 U1ZB20 U1ZB22 U1ZB390
Text: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 6.8 V ~ 390 V Surface Mounting Plastic Mold Package MAXIMUM RATINGS Ta = 25°C
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U1ZB390
U1ZB10
U1ZB11
U1ZB12
U1ZB13
U1ZB15
U1ZB16
U1ZB18
U1ZB20
U1ZB22
U1ZB390
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1ZB220-Y
Abstract: 1ZB36 1ZB200-Y DIODE 1zb36 1ZB220Y 1ZB200Y Zener IT 243 1ZB20 zener diode zener 441 1ZB20
Text: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage : VZ = 6.8~390V
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1ZB390
1ZB220-Y
1ZB36
1ZB200-Y
DIODE 1zb36
1ZB220Y
1ZB200Y
Zener IT 243
1ZB20 zener
diode zener 441
1ZB20
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1ZB220-Y
Abstract: diode zener 441 DIODE 1zb36 1ZB220Y
Text: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1.0W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs l Zener Voltage : VZ = 6.8~390V
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1ZB390
1ZB10
1ZB11
1ZB12
1ZB13
1ZB15
1ZB16
1ZB220-Y
diode zener 441
DIODE 1zb36
1ZB220Y
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Zener IT 243
Abstract: U1ZB10 U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB18 U1ZB20 U1ZB22
Text: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 6.8~390 V Surface Mounting Plastic Mold Package MAXIMUM RATINGS Ta = 25°C
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U1ZB390
Zener IT 243
U1ZB10
U1ZB11
U1ZB12
U1ZB13
U1ZB15
U1ZB16
U1ZB18
U1ZB20
U1ZB22
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U1ZB10
Abstract: U1ZB11 U1ZB12 U1ZB13 U1ZB15 U1ZB16 U1ZB18 U1ZB20 U1ZB22 U1ZB390
Text: U1ZB6.8~U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8~U1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1.0 W l Zener Voltage : VZ = 6.8~390 V l Surface Mounting Plastic Mold Package MAXIMUM RATINGS Ta = 25°C
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U1ZB390
U1ZB10
U1ZB11
U1ZB12
U1ZB13
U1ZB15
U1ZB16
U1ZB18
U1ZB20
U1ZB22
U1ZB390
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z390
Abstract: 1ZB200-Y 1ZB220-Y 1ZB200Y 1ZB10 1ZB11 1ZB12 1ZB13 1ZB15 1ZB16
Text: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200 µs Zener Voltage : VZ = 6.8 V ~ 390 V
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1ZB390
z390
1ZB200-Y
1ZB220-Y
1ZB200Y
1ZB10
1ZB11
1ZB12
1ZB13
1ZB15
1ZB16
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PDF
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z390
Abstract: 1ZB220-Y DIODE 1zb36 1ZB200Y
Text: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.0W z Peak Reverse Power Dissipation : PRSM = 200W at tw = 200 µs z Zener Voltage : VZ = 6.8 V ~ 390 V
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1ZB390
z390
1ZB220-Y
DIODE 1zb36
1ZB200Y
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DL110
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
DL110
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF275L
VK200
sony+IMX+179
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PDF
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5251f
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
5251f
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UNELCO
Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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MRF275L/D
MRF275L
UNELCO
S11 zener diode
motorola MOSFET 935
AN211A
MRF275L
VK200
VK200 4B inductor
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PDF
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IN4960
Abstract: IN4964 1N4954-1N4996 1N4954 1N4955 1N4956 1N5968 1N5969 1N4989 JANTX 1N4968 JANTX
Text: POWER ZENERS 1N4954-1N4996 1N5968-1N5969 JAN, JANTX & JANTXV 5 Watt, Military FEATURES DESCRIPTION • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size Fused-in-glass, metallurgically-bonded 5 watt zeners, qualified to MIL-S -19500/356.
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1N4954-1N4996
1N5968-1N5969
MIL-S-19500/356.
IN4960
IN4964
1N4954
1N4955
1N4956
1N5968
1N5969
1N4989 JANTX
1N4968 JANTX
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1ZB36
Abstract: diode zener 441 DIODE 1zb36 IZB36 zener 1ZB20 zener Zener IT 243 1ZB36 zener 1zb43 IZB20 zener zener 1ZB220-y
Text: T O S H IB A 1 Z B 6 .8 -1 Z B 3 9 0 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : P r s m —200W at tw = 200/^s
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OCR Scan
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8-1ZB390
1ZB330-Z)
961001EAA2
1ZB36
diode zener 441
DIODE 1zb36
IZB36 zener
1ZB20 zener
Zener IT 243
1ZB36 zener
1zb43
IZB20 zener
zener 1ZB220-y
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diode yz 140 zener
Abstract: AZ6 ZENER DIODE 1AZ11 1AZ15 1/a/diode yz 140 zener 1AZ6,8 1AZ10 1AZ12 1AZ13 1AZ16
Text: TOSHIBA 1A Z 6.8-1A Z330 T O SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1AZ6.8-1AZ330 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS a Nl Average Power Dissipation : P = 1.0W Zener Voltage : Vz = 6.8—330V Withstand Hard Environment Plastic Mold Package
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OCR Scan
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8-1AZ330
961001EAA1
1AZ300
1AZ300-Z
1AZ330
1AZ330
1AZ330-Z
diode yz 140 zener
AZ6 ZENER DIODE
1AZ11
1AZ15
1/a/diode yz 140 zener
1AZ6,8
1AZ10
1AZ12
1AZ13
1AZ16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package
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OCR Scan
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8-U1ZB390
1ZB390
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PDF
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3Z27 DIODE
Abstract: 3Z12 3Z27 3Z68 3Z200 3Z47 3Z110 3Z36 rd 3z27 3Z13
Text: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 3Z12-3Z390 Unit in mm VOLTAGE DETECTOR AN D SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package -o - P = 3W
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OCR Scan
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3Z12-3Z390
D0-201AD
961001EAA2
3Z27 DIODE
3Z12
3Z27
3Z68
3Z200
3Z47
3Z110
3Z36
rd 3z27
3Z13
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PDF
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DIODE RK 306
Abstract: 1ZB200 1ZB20 zener
Text: T O S H IB A 1 Z B 6 .8 -1 Z B 3 9 0 TO SHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8-1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package
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OCR Scan
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8-1ZB390
1ZB330-Z)
DIODE RK 306
1ZB200
1ZB20 zener
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PDF
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zener diode 7c3
Abstract: electrolytic capacitor 470 Nippon capacitors MRF255 equivalent
Text: MOTOROLA O rder th is docum ent by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Efffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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OCR Scan
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MRF255/D
2PHX34608Q
zener diode 7c3
electrolytic capacitor 470
Nippon capacitors
MRF255 equivalent
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PDF
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MRF255 equivalent
Abstract: electrolytic capacitor 470 mrf255
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies
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OCR Scan
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MRF255
MRF255 equivalent
electrolytic capacitor 470
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PDF
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731 MOSFET
Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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OCR Scan
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MRF275L/D
MRF275L/D
731 MOSFET
511 MOSFET TRANSISTOR motorola
Motorola AN211
VK200 20/4B inductor
0946 HC
039 E 31 motorola
AN211
motorola MOSFET 935
MOTOROLA SEMICONDUCTOR 928 B 360
MRF275L
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PDF
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J360
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband
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OCR Scan
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MRF175GV
MRF175GU
MRF175GU
RF175GV
MRF175G
MRF175GV
J360
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PDF
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sp 0937
Abstract: VK200 inductor of high frequencies Nippon capacitors
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
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OCR Scan
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MRF275L/D
MRF275L
sp 0937
VK200 inductor of high frequencies
Nippon capacitors
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PDF
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SU 179 transistor
Abstract: SU 179
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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OCR Scan
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RF275L/D
SU 179 transistor
SU 179
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PDF
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vk200 choke
Abstract: MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors
Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics
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OCR Scan
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MRF140/D
MRF140
vk200 choke
MRF140
motorola MRF140
511 MOSFET TRANSISTOR motorola
2204B
J101
VK200-4B
MRF140 equivalent
Nippon capacitors
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PDF
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