173 MHZ RF CHIP Search Results

173 MHZ RF CHIP Result Highlights (5)

Part	Manufacturer	Description
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
GCM188D70E226ME36D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for Automotive
GRM022C71A472KE19L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM033C81A224KE01W	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

173 MHZ RF CHIP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: nRF24LU1 Single Chip 2.4GHz Transceiver with USB Microcontroller and Flash Memory Product Specification v1.1 Key Features • • • • • • • • • • • • • • • • • • • • • • • • • nRF24L01 compatible RF transceiver	Original	nRF24LU1 nRF24L01 nRF2401A 60ppm 16MHz nRF2401/nRF2402/nRF24E1/nRF24E2 nRF2401/nRF24E1	PDF
24lu1 Abstract: nRF24L01 pa lna WJ88 C600-C61F nRF24LU1 nRF24l01 mouse nRF24L01 PRX C770 arcon arc em c7aa Text: nRF24LU1 Single Chip 2.4GHz Transceiver with USB Microcontroller and Flash Memory Product Specification v1.1 Key Features • • • • • • • • • • • • • • • • • • • • • • • • • nRF24L01 compatible RF transceiver	Original	nRF24LU1 nRF24L01 nRF2401A 60ppm 16MHz nRF2401/nRF2402/nRF24E1/nRF24E2 nRF2401/nRF24E1 24lu1 nRF24L01 pa lna WJ88 C600-C61F nRF24l01 mouse PRX C770 arcon arc em c7aa	PDF
transistor C4 Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier Text: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;	Original	BFR740L3RH 11b/g BFP620 AN173) transistor C4 Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier	PDF
equivalent for transistor tt 2206 Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts	OCR Scan	MRF163, MRF163 AN215A equivalent for transistor tt 2206 equivalent transistor TT 2206 transistor tt 2206 TT 2206 transistor	PDF
XRF184 Abstract: MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistor MRF184 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device	Original	MRF184/D MRF184 MRF184/D* XRF184 MRF184 173 MHz RF CHIP 305 Power Mosfet MOTOROLA	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184 MRF184S, 31JUL04 31JAN05	PDF
MRF184 Abstract: MRF184S MRF184SR1 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184S MRF184SR1 173 MHz RF CHIP	PDF
Motorola 0936 Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP Text: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of this device	OCR Scan	945rola, X34873Q-2 MRF184/D Motorola 0936 305 Power Mosfet MOTOROLA 173 MHz RF CHIP	PDF
a06t Abstract: A07T MRF1508 AN721 MRF1508T1 diode zener Z11 AN4005 A05T AN211A 200 pF air variable capacitor Text: MOTOROLA MRF1508 Cancelled The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.	Original	MRF1508 MRF1508 DEVICEMRF1508/D a06t A07T AN721 MRF1508T1 diode zener Z11 AN4005 A05T AN211A 200 pF air variable capacitor	PDF
a06t Abstract: MRF1508 A07T MRF1508T1 AN721 A05T AN211A 173 MHz RF CHIP 34 0010 TRANSISTOR 187 Text: MOTOROLA Order this document by MRF1508/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1508/D MRF1508 MRF1508T1 DEVICEMRF1508/D a06t A07T MRF1508T1 AN721 A05T AN211A 173 MHz RF CHIP 34 0010 TRANSISTOR 187	PDF
A07T Abstract: MRF1508 MRF1508T1 a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508 Text: MOTOROLA RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY The MRF1508 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source	Original	MRF1508/D MRF1508 MRF1508T1 DEVICEMRF1508/D A07T a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508	PDF
RF184 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POW ER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of these devices	OCR Scan	RF184 RF184S RF184S	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz. The high gain and broadband performance of these devices	OCR Scan	MRF184/D MRF184	PDF
945 mosfet n Abstract: motorola MOSFET 935 mrf184 MRF184S MRF184SR1 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.	Original	MRF184/D MRF184 MRF184S, MRF184 945 mosfet n motorola MOSFET 935 MRF184S MRF184SR1 173 MHz RF CHIP	PDF

MRF184 Abstract: MRF184R1 MRF184SR1 173 MHz RF CHIP Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	945roperty MRF184R1 MRF184SR1 MRF184/D MRF184 MRF184SR1 173 MHz RF CHIP	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184SR1	PDF
MRF184 Abstract: MRF184R1 MRF184SR1 Text: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	945roperty MRF184R1 MRF184SR1 MRF184/D MRF184 MRF184SR1	PDF
motorola MOSFET 935 Abstract: XRF184 MRF184 MRF184S 173 MHz RF CHIP Text: MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184 MRF184S motorola MOSFET 935 XRF184 MRF184S 173 MHz RF CHIP	PDF
CGB7016-BD Abstract: CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7016-BD Features Chip Layout Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz 18.4 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature	Original	04-Apr-07 CGB7016-BD CGB7016-BD CGB7016-BD-000V CGB7016-BD-000V DM6030HK TS3332LD tanaka gold wire current	PDF
Untitled Abstract: No abstract text available Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 04-Apr-07 CGB7016-BD Features Chip Layout Low Operating Voltage: 5V 34.0 dBm Output IP3 @ 850 MHz 3.8 dB Noise Figure @ 850 MHz 22.4 dB Gain @ 850 MHz 18.4 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature	Original	04-Apr-07 CGB7016-BD CGB7016-BD CGB7016-BD-000V	PDF
VK200 19 4B INDUCTOR Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor	PDF
MOTOROLA 934 Abstract: MOTOROLA 935 MRF184 MRF184R1 MRF184SR1 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF184/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices	Original	MRF184/D MRF184R1 MRF184SR1 MOTOROLA 934 MOTOROLA 935 MRF184 MRF184SR1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF184/D SEMICONDUCTOR TECHNICAL DATA MRF184 MRF184S, R1 The RF MOSFET Line RF POWER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen	OCR Scan	RF184/D	PDF
UNELCO Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor	PDF

173 MHZ RF CHIP Search Results

173 MHZ RF CHIP Result Highlights (5)

173 MHZ RF CHIP Datasheets Context Search

Untitled

24lu1

transistor C4

equivalent for transistor tt 2206

XRF184

Untitled

MRF184

Motorola 0936

a06t

a06t

A07T

RF184

Untitled

945 mosfet n

MRF184

Untitled

MRF184

motorola MOSFET 935

CGB7016-BD

Untitled

VK200 19 4B INDUCTOR

MOTOROLA 934

Untitled

UNELCO