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    Untitled

    Abstract: No abstract text available
    Text: ADS1224 SBAS286A − JUNE 2003 − REVISED MARCH 2004 24ĆBit AnalogĆtoĆDigital Converter with 4ĆChannel Differential Input Multiplexer FEATURES D 240SPS Data Rate with 4MHz Clock D 20-Bit Effective Resolution D Input Multiplexer with Four Differential


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    PDF ADS1224 SBAS286A 240SPS 20-Bit

    STS3DPF60L

    Abstract: S3DPF
    Text: STS3DPF60L DUAL P-CHANNEL 60V - 0.10 Ω - 3A SO-8 STripFET MOSFET Table 1: General Features TYPE VDSS RDS on ID 60 V < 0.12 Ω 3A STS3DPF60L • ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.10 Ω @ 10V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT


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    PDF STS3DPF60L STS3DPF60L S3DPF

    ST M29W800DT

    Abstract: M29W800D M29W800DB M29W800DT TFBGA48
    Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks


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    PDF M29W800DT M29W800DB 512Kb 64-and ST M29W800DT M29W800D M29W800DB M29W800DT TFBGA48

    n-channel so8 60v

    Abstract: STS4C3F60L s4c3f60l Back Light Inverter
    Text: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •


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    PDF STS4C3F60L n-channel so8 60v STS4C3F60L s4c3f60l Back Light Inverter

    Untitled

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P 24.5 22.5 LTR E 20.5 6.75 DESCRIPTION DATE REVISED PER ECO-14-00xxxx DWN APVD DD 24JAN2014 SA 1. APPLIED CONTACT PART NUMBERS: 175265 TIN PLATING, 040 CONTACT


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    PDF ECO-14-00xxxx 24JAN2014 16SEP2004 22-WAY

    M29W800D

    Abstract: M29W800DB M29W800DT TFBGA48
    Text: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME


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    PDF M29W800DT M29W800DB 512Kb M29W800D M29W800DB M29W800DT TFBGA48

    S3DPF

    Abstract: STS3DPF60L
    Text: STS3DPF60L DUAL P-CHANNEL 60V - 0.10 Ω - 3A SO-8 STripFET MOSFET Table 1: General Features TYPE VDSS RDS on ID 60 V < 0.12 Ω 3A STS3DPF60L • ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.10 Ω @ 10V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT


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    PDF STS3DPF60L S3DPF STS3DPF60L

    Untitled

    Abstract: No abstract text available
    Text: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access times: 45, 70, 90 ns „ Programming time – 10 s per byte/word typical


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    PDF M29W800DT M29W800DB 64-bit

    M29W800D

    Abstract: M29W800DB M29W800DT TFBGA48
    Text: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read ■ Access times: 45, 70, 90 ns ■ Programming time – 10 µs per byte/word typical


    Original
    PDF M29W800DT M29W800DB M29W800D M29W800DB M29W800DT TFBGA48