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    16N50C3 Search Results

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    16N50C3 Price and Stock

    Infineon Technologies AG SPW16N50C3FKSA1

    MOSFET N-CH 560V 16A TO247-3
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    DigiKey SPW16N50C3FKSA1 Tube 162 1
    • 1 $3.51
    • 10 $2.327
    • 100 $1.8091
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    Avnet Americas SPW16N50C3FKSA1 Tube 4 Weeks 173
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    SPW16N50C3FKSA1 Tube 15 Weeks 240
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    Newark SPW16N50C3FKSA1 Bulk 236 1
    • 1 $2.83
    • 10 $2.63
    • 100 $2.08
    • 1000 $1.92
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    Rochester Electronics SPW16N50C3FKSA1 155 1
    • 1 $2.11
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    • 100 $1.98
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    Chip1Stop SPW16N50C3FKSA1 Tube 240
    • 1 $1.81
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    SPW16N50C3FKSA1 180
    • 1 $4.72
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    • 100 $1.97
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    SPW16N50C3FKSA1 22
    • 1 $2.174
    • 10 $1.941
    • 100 $1.941
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    EBV Elektronik SPW16N50C3FKSA1 16 Weeks 240
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    Infineon Technologies AG SPA16N50C3XKSA1

    MOSFET N-CH 560V 16A TO220-3
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    DigiKey SPA16N50C3XKSA1 Tube 35 1
    • 1 $4.24
    • 10 $2.79
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    Newark SPA16N50C3XKSA1 Bulk 1
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    Chip1Stop SPA16N50C3XKSA1 450
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    Rochester Electronics LLC SPI16N50C3

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPI16N50C3 Bulk 300
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    Infineon Technologies AG SPB16N50C3ATMA1

    MOSFET N-CH 560V 16A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPB16N50C3ATMA1 Digi-Reel 1
    • 1 $2.82
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    SPB16N50C3ATMA1 Reel
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    Infineon Technologies AG SPI16N50C3HKSA1

    MOSFET N-CH 560V 16A TO262-3
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    DigiKey SPI16N50C3HKSA1 Tube
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    Find more 16N50C3 price and stock on Findchips.com

    16N50C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16n50c3

    Abstract: 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3
    Text: 16N50C3, 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		PDF SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 16n50c3 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3

    smd diode B4

    Abstract: 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 sg6961 16N50
    Text: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION Boundary Mode PFC Controller Low Input Current THD Controlled On-Time PWM Zero-Current Detection Cycle-by-Cycle Current Limiting Leading-Edge Blanking instead of RC Filtering Low Start-up Current 10uA TYP.


    Original     		PDF SG6961 SG6961 IRO33 smd diode B4 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 16N50

    16N50C3

    Abstract: No abstract text available
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-T220-3-31 PG-TO262 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 PG-T220-3-31 PG-TO262 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP16N50C3 16N50C3

    16n50c3

    Abstract: 16N50 16N50C 16n50c3 equivalent PG-TO263-3-2 SPB16N50C3 SPP16N50C3
    Text: 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 16n50c3 16N50 16N50C 16n50c3 equivalent PG-TO263-3-2 SPB16N50C3 SPP16N50C3

    16n50c3

    Abstract: 16n50c3 equivalent SPW16N50C3 Q67040-S4584 16N50C WA-140
    Text: 16N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW16N50C3 P-TO247 Q67040-S4584 16N50C3 16n50c3 16n50c3 equivalent SPW16N50C3 Q67040-S4584 16N50C WA-140

    16n50c3

    Abstract: diode 1N4148 SMD electrolytic capacitor, .1uF 50v varistor MOV1 SG6961SZ Electrolytic Capacitor 120uf 450v SG6961 8PINSS DIODE smd marking R12 TRN0193
    Text: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ The SG6961 is an 8-pin boundary mode PFC controller IC intended for controlling PFC pre-regulators. The SG6961 provides a controlled on-time to regulate the output DC


    Original     		PDF SG6961 SG6961 IRO33 381X45° 015X45° 16n50c3 diode 1N4148 SMD electrolytic capacitor, .1uF 50v varistor MOV1 SG6961SZ Electrolytic Capacitor 120uf 450v 8PINSS DIODE smd marking R12 TRN0193

    b5 SMD zener

    Abstract: varistor 14 471 SG6961SZ diode 1N4148 SMD 16N50C3 16n50 capacitor 0.47uf 275v Electrolytic Capacitor 120uf 450v TRN0193 2n7002 smd
    Text: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION „ „ „ „ „ „ „ „ „ „ „ „ The SG6961 is an 8-pin boundary mode PFC controller IC intended for controlling PFC pre-regulators. The SG6961 has many new features. It provides a


    Original     		PDF SG6961 SG6961 IRO33 b5 SMD zener varistor 14 471 SG6961SZ diode 1N4148 SMD 16N50C3 16n50 capacitor 0.47uf 275v Electrolytic Capacitor 120uf 450v TRN0193 2n7002 smd

    16N50C3

    Abstract: Q67040-S4581 16N50 SPA16N50C3 SPI16N50C3 SPP16N50C3 AN-TO220-3-31-01 P-TO220-3-31
    Text: 16N50C3, 16N50C3 16N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		PDF SPP16N50C3, SPI16N50C3 SPA16N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP16N50C3 16N50C3 Q67040-S4581 16N50 SPA16N50C3 SPI16N50C3 SPP16N50C3 AN-TO220-3-31-01 P-TO220-3-31

    16N50C3

    Abstract: No abstract text available
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-T220-3-31 PG-TO262 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 PG-T220-3-31 PG-TO262 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP16N50C3 16N50C3

    Q67040-S4581

    Abstract: 16N50C3 PG-T220-3-31
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-T220-3-31 PG-TO262 PG-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 PG-T220-3-31 PG-TO262 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: SPP16N50C3 Q67040-S4581 16N50C3

    Untitled

    Abstract: No abstract text available
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31

    16N50C3

    Abstract: No abstract text available
    Text: 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB16N50C3 P-TO263-3-2 SPB16N50C3 Q67040-S4642 16N50C3 16N50C3

    16N50C3

    Abstract: No abstract text available
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-1 PG-TO-220-3-31 SPP16N50C3 16N50C3

    16n50c3

    Abstract: SPI16N50C3 10s3 16n50c3 equivalent SPA16N50C3 SPP16N50C3 16n50 SP000216351
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 16n50c3 SPI16N50C3 10s3 16n50c3 equivalent SPA16N50C3 SPP16N50C3 16n50 SP000216351

    16N50C3

    Abstract: SPP16N50C3 SPA16N50C3 SPI16N50C3 Q67040-S4582
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 16N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 Q67040-S4582

    SPB16N50C3

    Abstract: No abstract text available
    Text: 16N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 SPB16N50C3

    16n50c3

    Abstract: AN-TO220-3-31-01 SPA16N50C3 SPI16N50C3 SPP16N50C3
    Text: 16N50C3, 16N50C3 16N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP16N50C3, SPI16N50C3 SPA16N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP16N50C3 16n50c3 AN-TO220-3-31-01 SPA16N50C3 SPI16N50C3 SPP16N50C3

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    16n50c3

    Abstract: SPP16N50C3 16n50c3 equivalent SPA16N50C3 SPI16N50C3
    Text: 16N50C3 16N50C3, 16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-T220-3-31 PG-TO262 PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-T220-3-31 PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 16n50c3 SPP16N50C3 16n50c3 equivalent SPA16N50C3 SPI16N50C3

    SPW16N50C3

    Abstract: Q67040-S4584 16N50C3
    Text: 16N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW16N50C3 P-TO247 Q67040-S4584 16N50C3 SPW16N50C3 Q67040-S4584 16N50C3