ADS1605
Abstract: ADS1606 ADS1625 ADS1625I ADS1626 TMS320C6000 TQFP-64
Text: ADS1625 ADS1626 SBAS280E − JUNE 2003 − REVISED MAY 2007 18ĆBit, 1.25MSPS AnalogĆtoĆDigital Converter FEATURES D Data Rate: 1.25MSPS D Signal-to-Noise Ratio: 93dB D Total Harmonic Distortion: −101dB D Spurious-Free Dynamic Range: 103dB D Linear Phase with 615kHz Bandwidth
|
Original
|
PDF
|
ADS1625
ADS1626
SBAS280E
18Bit,
25MSPS
-101dB
103dB
615kHz
0025dB
ADS1605
ADS1606
ADS1625
ADS1625I
ADS1626
TMS320C6000
TQFP-64
|
Untitled
Abstract: No abstract text available
Text: LDS3985 series Ultra low drop-low noise BICMOS 300mA V. Reg. for use with very low ESR output capacitor Features • Input voltage from 2.5V to 6V ■ Stable with low ESR ceramic capacitors ■ Ultra low dropout voltage 150mV typ. at 300mA load, 0.4mV typ. at 1mA load
|
Original
|
PDF
|
LDS3985
300mA
150mV
100KHz
10KHz
|
NE555
Abstract: TLC555 TLC555Q TLC555-Q1 TLC555QDRQ1
Text: TLC555-Q1 LinCMOS TIMER www.ti.com SLFS078 – OCTOBER 2006 FEATURES • • • • • • Qualified for Automotive Applications Very Low Power Consumption – 1 mW Typ at VDD = 5 V Capable of Operation in Astable Mode CMOS Output Capable of Swinging Rail to
|
Original
|
PDF
|
TLC555-Q1
SLFS078
NE555;
TLC555
NE555
TLC555Q
TLC555-Q1
TLC555QDRQ1
|
744312150
Abstract: PM6641 PM6641TR 13510 1s05 PM6641EVAL
Text: PM6641 Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC UMPC applications Features • 0.8 V ±1% internal voltage reference ■ 2.7 V to 5.5 V input voltage range ■ Fast response, constant frequency, current mode control ■ Three independent, adjustable, out-of-phase
|
Original
|
PDF
|
PM6641
744312150
PM6641
PM6641TR
13510
1s05
PM6641EVAL
|
Untitled
Abstract: No abstract text available
Text: LD2979xx Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.2 V typ. at 50 mA load ■ Very low quiescent current (typ. 500 µA at 50 mA load) ■ Output current up to 50 mA ■ Logic-controlled electronic shutdown ■
|
Original
|
PDF
|
LD2979xx
OT23-5L
LD2979
OT23-5L.
|
Untitled
Abstract: No abstract text available
Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection
|
Original
|
PDF
|
PD85035-E
2002/95/EC1
PowerSO-10RF
PD85035-E
|
Untitled
Abstract: No abstract text available
Text: SN74LVC1G58 CONFIGURABLE MULTIPLE-FUNCTION GATE www.ti.com SCES415K – NOVEMBER 2002 – REVISED JANUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V
|
Original
|
PDF
|
SN74LVC1G58
SCES415K
24-mA
000-V
A114-A)
A115-A)
|
JESD97
Abstract: LD2979 LD2979M30TR LD2979M33TR LD2979M38TR LD2979M50TR LD2979XX30 LD2979XX33 LD2979XX38 LD2979XX50
Text: LD2979xx Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.2 V typ. at 50 mA load ■ Very low quiescent current (typ. 500 µA at 50 mA load) ■ Output current up to 50 mA ■ Logic-controlled electronic shutdown ■
|
Original
|
PDF
|
LD2979xx
OT23-5L
LD2979
OT23-5L.
JESD97
LD2979M30TR
LD2979M33TR
LD2979M38TR
LD2979M50TR
LD2979XX30
LD2979XX33
LD2979XX38
LD2979XX50
|
Untitled
Abstract: No abstract text available
Text: SN74AHC1G04 SINGLE INVERTER GATE SCLS318Q − MARCH 1996 − REVISED JUNE 2005 D D D D D Schmitt Trigger Action at All Inputs Makes Operating Range of 2 V to 5.5 V Max tpd of 6.5 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V D
|
Original
|
PDF
|
SN74AHC1G04
SCLS318Q
|
744312150
Abstract: PM6641 PM6641TR VFQFPN-48 VFQFPN48
Text: PM6641 Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC UMPC applications Features • 0.8 V ±1 % internal voltage reference ■ 2.7 V to 5.5 V input voltage range ■ Fast response, constant frequency, current mode control ■ Three independent, adjustable, out-of-phase
|
Original
|
PDF
|
PM6641
744312150
PM6641
PM6641TR
VFQFPN-48
VFQFPN48
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2002 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2002 REVISIONS ALL RIGHTS RESERVED. P LTR E -X- 6 ROW FG GROUND 10 6 5 1.50 ROW DG (GROUND) ROW D 0.20 1.5 ROW C ROW BG (GROUND) BSC 6 -Y- REFERENCE APPLICATION SPEC 114-13059 FOR RECOMMENDED
|
Original
|
PDF
|
13MAY2002
11APR2014
ECO-14-005095
|
C900
Abstract: STLM75 STTS75 STTS751 0034D
Text: STTS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±0.5°C (typ) accuracy – ±2°C (max) accuracy from –25°C to +100°C ■ Low operating current: 75 µA (typ)
|
Original
|
PDF
|
STTS75
C900
STLM75
STTS75
STTS751
0034D
|
ADS1605
Abstract: ADS1606 ADS1625 ADS1625I ADS1626 TMS320C6000 TQFP-64
Text: ADS1625 ADS1626 SBAS280E − JUNE 2003 − REVISED MAY 2007 18ĆBit, 1.25MSPS AnalogĆtoĆDigital Converter FEATURES D Data Rate: 1.25MSPS D Signal-to-Noise Ratio: 93dB D Total Harmonic Distortion: −101dB D Spurious-Free Dynamic Range: 103dB D Linear Phase with 615kHz Bandwidth
|
Original
|
PDF
|
ADS1625
ADS1626
SBAS280E
18Bit,
25MSPS
-101dB
103dB
615kHz
0025dB
ADS1605
ADS1606
ADS1625
ADS1625I
ADS1626
TMS320C6000
TQFP-64
|
JESD97
Abstract: LDS3985 LDS3985XX28 LDS3985XX33 TSOT23 TSOT23-5L LDS3985M18R ultra drop lds3985m33r LDS3985PU33R
Text: LDS3985xx Ultra low drop-low noise BiCMOS 300 mA volt. reg. for use with very low ESR output capacitor Features • Input voltage from 2.5 V to 6 V ■ Stable with low ESR ceramic capacitors ■ Ultra low dropout voltage 150 mV typ. at 300 mA load, 0.4 mV typ. at 1 mA load
|
Original
|
PDF
|
LDS3985xx
JESD97
LDS3985
LDS3985XX28
LDS3985XX33
TSOT23
TSOT23-5L
LDS3985M18R ultra drop
lds3985m33r
LDS3985PU33R
|
|
|
Untitled
Abstract: No abstract text available
Text: LDS3985xx Very low drop and low noise BiCMOS 300 mA voltage regulator Datasheet - production data and high quality tantalum capacitor. The ultra low drop voltage, low quiescent current and low noise make it suitable for low power applications and battery-powered systems. Regulator ground
|
Original
|
PDF
|
LDS3985xx
OT23-5L
DocID11039
|
NV SMD TRANSISTOR
Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
Text: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package
|
Original
|
PDF
|
PD85035-E
PD85035S-E
870MHz
2002/93/EC
PowerSO-10RF
PD85035-E
NV SMD TRANSISTOR
PD85035
PD85035S
PD85035S-E
AN1294
JESD97
J-STD-020B
PD85035STR-E
PD85035TR-E
|
Monopack 2 manual
Abstract: lt 5217 ic485-I sim 5218 LT 5224 LT 5212 A250 TMC453 ic485-lp-1f LT 5216
Text: MONOPACK 2 Manual Version: 1.04 Jan 29th, 2010 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20357 Hamburg, Germany http://www.trinamic.com Monopack 2 Manual V1.04 Version Version 1.00 1.01 1.01 1.02 1.03 1.04 Date 2-Nov-05 18-Aug-06 21-Aug-06 16-May-2007
|
Original
|
PDF
|
2-Nov-05
18-Aug-06
21-Aug-06
16-May-2007
15-Feb-08
29-Jan-10
D-21079
Monopack 2 manual
lt 5217
ic485-I
sim 5218
LT 5224
LT 5212
A250
TMC453
ic485-lp-1f
LT 5216
|
Untitled
Abstract: No abstract text available
Text: PD84001 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 1 W with 15 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel
|
Original
|
PDF
|
PD84001
2002/95/EC
OT-89
PD84001
PD84001â
|
GW39NC60
Abstract: No abstract text available
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■
|
Original
|
PDF
|
STGW39NC60VD
O-247
STGW39NC60VD
O-247
GW39NC60
|
Untitled
Abstract: No abstract text available
Text: LDS3985xx Ultra low drop-low noise BiCMOS 300 mA volt. reg. for use with very low ESR output capacitor Features • Input voltage from 2.5 V to 6 V ■ Stable with low ESR ceramic capacitors ■ Ultra low dropout voltage 150 mV typ. at 300 mA load, 0.4 mV typ. at 1 mA load
|
Original
|
PDF
|
LDS3985xx
|
schematic diagram "induction heating"
Abstract: schematic diagram induction heating diagram induction schematic diagram induction
Text: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■
|
Original
|
PDF
|
STGW39NC60VD
O-247
STGW39NC60VD
O-247
schematic diagram "induction heating"
schematic diagram induction heating
diagram induction
schematic diagram induction
|
Untitled
Abstract: No abstract text available
Text: SN74LVC1G332 SINGLE 3-INPUT POSITIVE-OR GATE www.ti.com SCES489D – SEPTEMBER 2003 – REVISED SEPTEMBER 2006 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V
|
Original
|
PDF
|
SN74LVC1G332
SCES489D
24-mA
000-V
A114-A)
A115-A)
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2003 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2003 REVISIONS ALL RIGHTS RESERVED. P 1 -X- 6 12 ROW HG GROUND ROW H 7 ROW FG (GROUND) ROW F 5 ROW E 1.50 ROW DG (GROUND) 1.5 ROW C ROW BG (GROUND) TYP ROW B ROW A
|
Original
|
PDF
|
ECO-14-005095
GR-1217-CORE,
13FEB2003
16MAY2007
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2002 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2002 REVISIONS ALL RIGHTS RESERVED. P LTR E 1 -X- 6 20 11 10 1.50 1 0.20 ROW D REVISED PER ECO-14-005095 DWN APVD AP 11APR2014 RP 5 1.50 TYP ROW C ROW BG GROUND ROW B
|
Original
|
PDF
|
ECO-14-005095
11APR2014
25APR2002
16MAY2007
|