Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-2E
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
D-63303
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MBM29LV160TE70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA
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DS05-20883-5E
MBM29LV160TE/BE70/90
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
F0306
MBM29LV160TE70
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-2E
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-4E
MBM29LV160TE/BE70/90
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
F0201
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
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DS05-20883-4E
MBM29LV160TE/BE70/90
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
F0201
FPT-48P-M19
FPT-48P-M20
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MBM29F160
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-2E
MBM29F160TE/BE-55/-70/-90
MBM29F160TE/BE
16M-bit,
48-pin
MBM29F160
FPT-48P-M19
FPT-48P-M20
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FPT-48P-M19
Abstract: FPT-48P-M20 mbm29f160be-70-90 20/MBM29F160TE/BE
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (1) package. The device is designed to be
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DS05-20879-6E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0404
FPT-48P-M19
FPT-48P-M20
mbm29f160be-70-90
20/MBM29F160TE/BE
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-2E
MBM29F160TE/BE-55/-70/-90
MBM29F160TE/BE
16M-bit,
48-pin
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-5E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
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20/MBM29F160TE/BE
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-4E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0203
20/MBM29F160TE/BE
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MBM29F160BE-90
Abstract: MBM29F160BE90 FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE55/70/90 MBM29F160BE55/70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-3E
MBM29F160TE55/70/90
MBM29F160BE55/70/90
MBM29F160TE/BE
16M-bit,
48-pin
MBM29F160BE-90
MBM29F160BE90
FPT-48P-M19
FPT-48P-M20
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-5E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0207
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm
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K9F2808U0C
K9F2816U0C
48-Ball,
63-Ball,
K9F28XXQ0C
K9F2808U0C-FCB0
K9F2808Q0C-HCB0
K9F2816U0C-HCB0
K9F2816U0C-PCB0
K9F2816Q0C-HCB0
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flash 8m*16bit
Abstract: K9F2808Q0C-HCB0 K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0
Text: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm
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K9F2808U0C
K9F2816U0C
48-Ball,
63-Ball,
K9F28XXQ0C
Pb-fre2816U0C
flash 8m*16bit
K9F2808Q0C-HCB0
K9F2808U0C
K9F2808U0C-FCB0
K9F2808U0C-HCB0
K9F2808U0C-PCB0
K9F2816Q0C-HCB0
K9F2816U0C-HCB0
K9F2816U0C-PCB0
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K9F2808Q0C-HCB0
Abstract: K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0
Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002
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K9F2808U0C
48-Ball,
63-Ball,
K9F28XXQ0C
K9F2808Q0C-HCB0
K9F2808U0C
K9F2808U0C-FCB0
K9F2808U0C-HCB0
K9F2808U0C-PCB0
K9F2816Q0C-HCB0
K9F2816U0C-HCB0
K9F2816U0C-PCB0
K9F2808U0C-YCB0
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The
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DS05-20872-3E
MBM29PL160TD/BD-75/90
MBM29PL160TD/BD
48-pin
44-pin
MBM29PL160TD/160BD
F0306
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: A23L36166/A23L361662 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Preliminary Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue September 15, 2008 Preliminary 0.1 Add 56-pin TSOP 1 package type
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A23L36166/A23L361662
56-pin
48-pin
56-pin
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Untitled
Abstract: No abstract text available
Text: A23L36166/A23L361662 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Preliminary Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM WITH PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue September 15, 2008 Preliminary 0.1 Add 56-pin TSOP 1 package type
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A23L36166/A23L361662
56-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: A23L3616/A23L36161 Series 8M X 16 / 16M X 8 BIT CMOS MASK ROM Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM Revision History History Issue Date Remark 0.0 Initial issue November 3, 2003 Preliminary 0.1 Add A23L36161 flash type August 27, 2004 0.2 Modify A23L36161V pin configuration:
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A23L3616/A23L36161
A23L36161
A23L36161V
100ns
120ns
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A23L36161
Abstract: A23L36161V
Text: A23L3616/A23L36161 Series Preliminary 8M X 16 / 16M X 8 BIT CMOS MASK ROM Document Title 8M X 16 / 16M X 8 BIT CMOS MASK ROM Revision History History Issue Date Remark 0.0 Initial issue November 3, 2003 Preliminary 0.1 Add A23L36161 flash type August 27, 2004
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A23L3616/A23L36161
A23L36161
A23L36161V
44-pin
48-pin
A23L36161
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56-PIN
Abstract: LH28F008SA LH28F016SU
Text: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19
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LH28F016SU
56-PIN
J63428
SMT96111
LH28F008SA
LH28F016SU
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KM29U128AIT
Abstract: KM29U128AT NAND flash memory
Text: Advanced Information FLASH MEMORY KM29U128AT, KM29U128AIT Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark April 10th 1999 Advanced Information The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29U128AT,
KM29U128AIT
KM29U128AA16M
48-pin
KM29U128AIT
KM29U128AT
NAND flash memory
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TSOP 48 Package nand memory
Abstract: NAND flash memory nor flash 1Mx16 flash TSOP I KM29N040T KM28U800
Text: 1. INTRODUCTION <NOR FLASH MEMORY> <NAND FLASH MEMORY> 2. PRODUCT GUIDE < NOR FLASH MEMORY > Density Org. Supply 2.7V-3.6V 8M bit 16M bit Part Number KM28U800 Features 2Mx8 1Mx16 4.5V-5.5V KM28N800 55/70/90 2.7V-3.6V KM28U160 80/90/120ns Package Standard Temp.
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OCR Scan
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512KX
1Mx16
KM28N800
KM28U800
90/100/120ns
48CSP
KM28U160
80/90/120ns
KM29U128T
KM29U128IT
TSOP 48 Package nand memory
NAND flash memory
nor flash
1Mx16 flash
TSOP I
KM29N040T
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A10C
Abstract: A12C A15C A17C LH28F008SA LH28F016SU
Text: 16M 1M x 1 6 ,2M x 8 Flash Memory 56-PIN TSOP TO P VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 70 ns Maximum Access Time • 0.32 MB/sec Write Transfer Rate • 100,000 Erase Cycles per Block • 32 Independently Lockable Blocks
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LH28F008SA
56-Pin,
56TSOP
TSOPQ56-P-1420)
LH28F016SU
TSOP056-P-1420)
LH28F016SUT-70
56-pin
28f016sut-16
A10C
A12C
A15C
A17C
LH28F008SA
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