Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    16K X 1 RAM Search Results

    16K X 1 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7016L12PF8 Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016L20JI Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016L25PF8 Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016S12PF8 Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation
    7016S35PF Renesas Electronics Corporation 16K x 9 Dual-Port RAM Visit Renesas Electronics Corporation

    16K X 1 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C006

    Abstract: CY7C016
    Text: fax id: 5207 1 CY7 C0 16 CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)


    Original     		PDF CY7C006 CY7C016 CY7C006) CY7C016) 65-micron 68-pin CY7C006 CY7C016

    9l reset

    Abstract: CY7C026A A13L CY7C036A NC373
    Text: CY7C026A/026B CY7C036A16K x 16/18 Dual-Port Static RAM CY7C026A/026B CY7C036A 16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 16 organization CY7C026A/026B[1]


    Original     		PDF CY7C026A/026B CY7C036A16K CY7C036A 100-Pin CY7C036A) CY7C026A/026B 9l reset CY7C026A A13L CY7C036A NC373

    9l reset

    Abstract: A13L CY7C026A CY7C036A
    Text: CY7C026A/026B CY7C036A16K x 16/18 Dual-Port Static RAM CY7C026A/026B CY7C036A 16K x 16/18 Dual-Port Static RAM Features • True dual-ported memory cells that allow simultaneous access of the same memory location ■ 16K x 16 organization CY7C026A/026B[1]


    Original     		PDF CY7C026A/026B CY7C036A16K CY7C036A 100-Pin CY7C036A) CY7C026A/026B 9l reset A13L CY7C026A CY7C036A

    CY7C128A SRAM

    Abstract: 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
    Text: Qualification Report December, 1994, QTP# 94065 Version 1.0 16K SRAM, 7% SHRINK, R21 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A


    Original     		PDF CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A M32007. -4000V CY7C128A SRAM 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H

    CY7C128A 16k sram

    Abstract: CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
    Text: Qualification Report June, 1994, QTP# 91423/93201 Version 1.1 16K Chop Redesign MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A 4K x 4 Static RAM


    Original     		PDF CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A 200mA CY7C128A 16k sram CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H

    2759

    Abstract: 1 bit sram 16K RAM ECL-10K ecl 10K sram 16 bit
    Text: PRELIMINARY IDT10480 IDT100480 IDT101480 HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM  Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns • Low power dissipation: 1000mW (typ.)


    Original     		PDF IDT10480 IDT100480 IDT101480 1000mW IDT10480, IDT100480 IDT101480 384-bit ECL-10K ECL-100K 2759 1 bit sram 16K RAM ECL-10K ecl 10K sram 16 bit

    CY7C09569V

    Abstract: ba172 CY7C09579V
    Text: 1 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V


    Original     		PDF CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron CY7C09569V ba172 CY7C09579V

    CY7C4255

    Abstract: CY7C4265 CY7C42X5
    Text: CY7C4255, CY7C4265, CY7C4265A 8K/16K x 18 Deep Sync FIFOs Features Functional Description • High Speed, Low Power, First-In First-Out FIFO Memories ❐ 8K x 18 (CY7C4255) [1] ❐ 16K x 18 (CY7C4265/4265A) ■ 0.5 Micron CMOS for Optimum Speed and Power


    Original     		PDF CY7C4255, CY7C4265, CY7C4265A 8K/16K CY7C4255) CY7C4265/4265A) CY7C4255 CY7C4265 CY7C42X5

    CY7C09389V

    Abstract: No abstract text available
    Text: 1 CY7C09269V/79V/89V CY7C09369V/79V/89V 3.3V 16K/32K/64K x 16/18 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 6 Flow-Through/Pipelined devices — 16K x 16/18 organization CY7C09269V/369V


    Original     		PDF CY7C09269V/79V/89V CY7C09369V/79V/89V 16K/32K/64K CY7C09269V/369V) CY7C09279V/379V) CY7C09289V/389V) 100-MHz 35-micron CY7C09389V

    Untitled

    Abstract: No abstract text available
    Text: 1 CY7C138AV/144AV/006AV CY7C139AV/145AV/016AV CY7C007AV/017AV PRELIMINARY 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 4K/8K/16K/32K x 8 organizations CY7C0138AV/144AV/


    Original     		PDF CY7C138AV/144AV/006AV CY7C139AV/145AV/016AV CY7C007AV/017AV 4K/8K/16K/32K CY7C0138AV/144AV/ 006AV/007AV) CY7C0139AV/145AV/ 016AV/017AV)

    Untitled

    Abstract: No abstract text available
    Text: Integrated DeviceTechnology Inc CM O S STATIC RAM 16K 16K x 1-BIT IDT 6167SA IDT 6167LA FEA T U R ES : DESCRIPTION: • The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT’s high-performance, highreliabillty technology-CEM OS. This state-of-the-art technology,


    OCR Scan     		PDF 6167SA 6167LA 15/20/25/35/45/55/70/85/100ns 12/15/20/25/35ns 100yW 20-pin 20-pln iDT61678A/lDT6167LA

    TAA 840

    Abstract: No abstract text available
    Text: gggffi'N. HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16K x 1-BIT SRAM |jd £ / Integrated Device Technology, Inc. PRELIMINARY IDT10480 IDT100480 IDT101480 FEATURES: DESCRIPTION: • 16,384 x 1-bit organization • Address access time: 3/3.5/4/5/7/8/10/12/15 ns


    OCR Scan     		PDF IDT10480 IDT100480 IDT101480 1000mW IDT10480, IDT101480are 384-bit ECL-10K ECL-100K TAA 840

    Untitled

    Abstract: No abstract text available
    Text: L7C167 16K x 1 Static RAM FEATURES DESCRIPTION □ 16K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum Q Low Power Operation Active: 135 mW typical at 35 ns


    OCR Scan     		PDF CV7C167 20-pin L7C167 L7C167 L7C167DM35

    ic 7483 pin configuration diagram

    Abstract: Power Distribution Board with line diagram with d
    Text: IMS1403 CMOS High Performance 16K x 1 Static RAM anm os’ DESCRIPTION FE A T U R E S • INMOS' Very High Speed CMOS •Advanced Process -1.6 Micron Design Rules • 16K x 1 Bit Organization • 2 5,35,45 and 55 nsec Access Times • Fully T TL Compatible


    OCR Scan     		PDF IMS1403 1MS1403 IMS1403 IMS1403M IMS1403LM MIL-STD-883 ic 7483 pin configuration diagram Power Distribution Board with line diagram with d

    Untitled

    Abstract: No abstract text available
    Text: V 1' 16K x 4 Static RAM L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns


    OCR Scan     		PDF CY7C164/166 22/24-pin 24-pin 22-pin 28-pin L7C164/165/166 L7C164,

    L7C167

    Abstract: No abstract text available
    Text: L7C167 16K x 1 Static RAM FEATURES □ 16K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 8 ns maximum □ Low Power Operation Active: 135 mW typical at 35 ns Standby: 100 |aW typical


    OCR Scan     		PDF L7C167 CY7C167 20-pin L7C167KC35

    sc1007

    Abstract: dt6167
    Text: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,


    OCR Scan     		PDF 00035tb 15/20/25/35/45/55/70/85/100ns 12/15/20/25/35ns IDT6167SA 200mW 100pW IDT6167LA 150mW 6167SA 6167LA sc1007 dt6167

    Untitled

    Abstract: No abstract text available
    Text: mos IMS IMS IMS IMS IMS IMS 1605: 6 4 K x 1 1625: 1 6 K x 4 1629: 16K x 4 with Output Enable / 1626/7:16K x 4 with Separate I/Os 1635: 8K x 8 1695: 8K x 9 FEATURES • INMOS' Very High Speed Double Metal CMOS • Advanced Process-1.2 Micron Design Rules • 64K Bit Devices


    OCR Scan     		PDF IMS16X5 IMS16X5 IMS1605i-15 IMS1605x-20 IMS1605 IMS1605x-25 IMS1629x-15 IMS1629x-20 IMS1629x-25 IMS1626x-15

    Untitled

    Abstract: No abstract text available
    Text: L7C167 16K x 1 Static RAM Features Description_ □ 16K by 1 Static RAM with separate I/O , Chip Select power down The L7C167 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 16,384 words by 1 bit


    OCR Scan     		PDF L7C167 L7C167 CY7C167

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY SEMICONDUCTOR 16K x 68 SRAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1910 is a very high perform­ ance 1-megabit static RAM module organized as 16K words by 68 bits. This module is constructed using seventeen


    OCR Scan     		PDF CYM1910 I/O51 I/O32 l/027 I/O25 1/O22 I/O20 I/067 I/083

    Untitled

    Abstract: No abstract text available
    Text: .SS;:. . IMS1620 SSSSSSSS 'SSSSSS " " CMOS High Performance 16K x 4 Static RAM iì m o s FEATURES DESCRIPTION • INMOS' Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 16K x 4 Bit Organization ■ 25, 30, 35, 45 and 55 nsec Access Times


    OCR Scan     		PDF IMS1620 22-Pin, 300-mil 22-Pin 24-Pin, IMS1620

    Untitled

    Abstract: No abstract text available
    Text: IMS1620 CMOS High Performance 16K x 4 Static RAM mos DESCRIPTION FEATURES • • • • • • • • • • • • INMOS'Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 16K x 4 Bit Organization 25, 30, 35, 45 and 55 nsec Access Times


    OCR Scan     		PDF IMS1620 22-Pin, 300-mil 22-Pin 24-Pin, IMS1620

    L7C164PC20

    Abstract: No abstract text available
    Text: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 yiW typical


    OCR Scan     		PDF L7C164/166 L7C164 L7C166 MIL-STD-883, CY7C164/166 22/24-pin 24-pin 22/28-pin L7C164PC20

    ez619

    Abstract: 55CCT 1ewd
    Text: LOGIC DEVICES INC 2bE » • SStSIQS 0001052 7 ■ r - 16K x 4 Static RAM I FEATURES L 7 C 1 6 4 /1 6 5 /1 6 6 DESCRIPTION | □ 16K x 4 Static RAM with Common I/O □ Auto-Powerdown'04 Design □ Advanced CMOS Technology Q High Speed— to 8 ns maximum Q Low Power Operation


    OCR Scan     		PDF 0G01Q22 L7C164/165/166 CY7C164/166 22/24-pin 24-pin 22-pin 28-pin ez619 55CCT 1ewd