emitter switched bipolar transistor
Abstract: C12IE90HV JESD97 STC12IE90HV
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
C12IE90HV
JESD97
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emitter switched bipolar transistor
Abstract: No abstract text available
Text: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STC12IE90HV
O247-4L
STC12IE90HV
emitter switched bipolar transistor
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Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KL70ZA6F
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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mosfet D403
Abstract: D403 mosfet D404 mosfet U401B q406 BLM41PG600SN1L 10UF-50V 74HC4066 C4161 U403B
Text: 1 2 3 4 5 SHUNT_CON_2,54 SHUNT_CON_2,54 JS400 JS402 1 PGND VBAT- G C433 2 1 LOAD_MINUS_ON GND 2 12 5 GND GND R401 R403 10K0_0603_0.1% 1 2 R405 R407 30K0_0603_0.1% 1 2 100N_16V_X7R PGND PGND PGND 150K 150K 10K 1 R425 2 1 R417 2 V_BUCK_IN_B 150K 10K 1 R424 2 1 R416 2 V_BUCK_IN_A
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JS400
JS402
U402D
74HC4066
16-Jan-2007
A0501
U401E
1TP401
1TP400
mosfet D403
D403 mosfet
D404 mosfet
U401B
q406
BLM41PG600SN1L
10UF-50V
74HC4066
C4161
U403B
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TS4871
Abstract: ReadCapacity10 UM0290 SPC2
Text: UM0290 User manual STR7/STR9 USB developer kit Introduction The STR7/9 USB developer kit is a complete firmware and software package including examples and demos for all USB transfer types control, interrupt, bulk and isochronous . It supports all ST 32-bit USB microcontrollers (STR71x ,STR75x and STR91x).
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UM0290
32-bit
STR71x
STR75x
STR91x)
TS4871
ReadCapacity10
UM0290
SPC2
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MSP430F4270
Abstract: MSP430 MSP430F4250 MSP430F4260 TMS345 SD16CCTL0 SLAZ022 SD16UNI
Text: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455D − MARCH 2005 − REVISED APRIL 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA
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MSP430F42x0
SLAS455D
16-Bit
125-ns
12-Bit
MSP430F4270
MSP430
MSP430F4250
MSP430F4260
TMS345
SD16CCTL0
SLAZ022
SD16UNI
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P12IE95F4
Abstract: STP12IE95F4 JESD97
Text: STP12IE95F4 Emitter Switched Bipolar Transistor ESBT 950 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz
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STP12IE95F4
O220FP-4L
STP12IE95F4
P12IE95F4
JESD97
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CR14
Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
CR14
M58WR032KU
VFBGA44
MS-328
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JESD97
Abstract: P12IE90F4 STP12IE90F4
Text: STP12IE90F4 Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Squared RBSOA up to 900V
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STP12IE90F4
P12IE90F4
O220FP-4L
000000000000000000000000000000000000000or
JESD97
P12IE90F4
STP12IE90F4
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.3mm Height 19-218/BHC-ZL1M2QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow
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19-218/BHC-ZL1M2QY/3T
DSE-198-B02
16-Jan-2007
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SLAU
Abstract: MSP430F4250 SLAU056 MSP430 MSP430F4260 MSP430F4270
Text: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455D − MARCH 2005 − REVISED APRIL 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA
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MSP430F42x0
SLAS455D
16-Bit
125-ns
12-Bit
SLAU
MSP430F4250
SLAU056
MSP430
MSP430F4260
MSP430F4270
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Untitled
Abstract: No abstract text available
Text: SN74AUP1G08 LOW-POWER SINGLE 2-INPUT POSITIVE-AND GATE www.ti.com SCES502E – NOVEMBER 2003 – REVISED JANUARY 2007 • • • FEATURES • • • • • • • Available in the Texas Instruments NanoFree Package Low Static-Power Consumption ICC = 0.9 µA
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SN74AUP1G08
SCES502E
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Untitled
Abstract: No abstract text available
Text: SN74AUP1G00 LOW-POWER SINGLE 2-INPUT POSITIVE-NAND GATE www.ti.com SCES604D – SEPTEMBER 2004 – REVISED JANUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package Low Static-Power Consumption ICC = 0.9 µA Max
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SN74AUP1G00
SCES604D
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Untitled
Abstract: No abstract text available
Text: DA DAC8802 C8 802 www.ti.com SBAS351B – AUGUST 2005 – REVISED FEBRUARY 2007 Dual, Serial Input 14-Bit Multiplying Digital-to-Analog Converter FEATURES DESCRIPTION • • • The DAC8802 is a dual, 14-bit, current-output digital-to-analog converter DAC designed to
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DAC8802
SBAS351B
14-Bit
DAC8802
14-bit,
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DAT00
Abstract: DAT20
Text: www.ti.com SN74AVCA406 MMC, SD CARD, Memory Stick, SmartMedia, AND xD-Picture Card ±15-kV ESD-PROTECTED VOLTAGE-TRANSLATION TRANSCEIVER SCES615H – OCTOBER 2004 – REVISED JANUARY 2007 FEATURES • • • • Transceiver for Memory Card Interface [MultiMediaCard MMC , Secure Digital (SD),
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SN74AVCA406
15-kV
SCES615H
DAT00
DAT20
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JESD97
Abstract: SSOP28 SSOP-28 ST3237 ST3237BPR
Text: ST3237 3 to 5.5V, 250Kbps, RS-232 Transceiver with stand-by Feature summary • 1µA low power shutdown with receivers active ■ Guaranteed data rate – 250Kbps normal operation – 1Mbps (very high speed operation) ■ Guaranteed slew rate range – 6V/µs (normal operation)
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ST3237
250Kbps,
RS-232
250Kbps
500uA
EIA/TIA-232
SSOP-28
250Kbps
JESD97
SSOP28
SSOP-28
ST3237
ST3237BPR
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U501D
Abstract: 74HC4066 EL17-21SYGC U501B EM501 U501C U500A EM500 C5021 V3P3
Text: 1 2 3 4 5 6 8 7 14 V3P3 U500E RID/NTC BIAS VCC 74HC4066 L500 2 1 V3P3 BLM21AG102SN1D GND 1 C501 2 GND 100N_16V_X7R V_BAT_- V_BAT_V3P3 D502 10MQ060 2 1 4 U500A 74HC4066 1 RID/NTC 2 J500 1 3 BATTERY + 2 5 BATTERY - RID_NTC_A 4 SDA_1_WIRE_A 3 SCL_A 2 BATTERY_A_EN
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U500E
74HC4066
BLM21AG102SN1D
10MQ060
U500A
U500D
U501E
U501D
74HC4066
EL17-21SYGC
U501B
EM501
U501C
U500A
EM500
C5021
V3P3
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D2092
Abstract: EL17-21USRC D209 D2041 D2082 EL17-21USOC ATmega644-20AU D2072 xc200 SW200
Text: Q7' Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 LATCH R202 10K GND 1 GND 2 3 GND Programming for all on-board AVRs. 10N_16V_X7R GND 10N_16V_X7R C219 2 1 10N_16V_X7R C218 2 1 10N_16V_X7R C217 2 1 C216 1 10N_16V_X7R GND 10N_16V_X7R 1 V3P3 2 BLM21AG102SN1D C221 1 2 L200 GND B GND
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EL17-21USRC
BLM21AG102SN1D
SW201
EL17-21UYC/A2
AT45DB041D-SC-2
D2092
EL17-21USRC
D209
D2041
D2082
EL17-21USOC
ATmega644-20AU
D2072
xc200
SW200
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Untitled
Abstract: No abstract text available
Text: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455D − MARCH 2005 − REVISED APRIL 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA
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MSP430F42x0
SLAS455D
16-Bit
125-ns
12-Bit
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dl179
Abstract: wireless s79 LVD179 SN65LVDS050 SN65LVDS051 SN65LVDS179 SN65LVDS179D SN65LVDS179DGK SN65LVDS180 SN65LVDS180D
Text: SN65LVDS179, SN65LVDS180 SN65LVDS050, SN65LVDS051 www.ti.com SLLS301M – APRIL 1998 – REVISED JANUARY 2007 HIGH-SPEED DIFFERENTIAL LINE DRIVERS AND RECEIVERS FEATURES • • • • • • • • • • Meets or Exceeds the Requirements of ANSI TIA/EIA-644-1995 Standard
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SN65LVDS179,
SN65LVDS180
SN65LVDS050,
SN65LVDS051
SLLS301M
TIA/EIA-644-1995
dl179
wireless s79
LVD179
SN65LVDS050
SN65LVDS051
SN65LVDS179
SN65LVDS179D
SN65LVDS179DGK
SN65LVDS180
SN65LVDS180D
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JESD97
Abstract: P12IE90F4 STP12IE90F4 forward smps
Text: STP12IE90F4 Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Squared RBSOA up to 900V
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STP12IE90F4
P12IE90F4
O220FP-4L
00000000and
JESD97
P12IE90F4
STP12IE90F4
forward smps
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TTCO ELECTRONICS CORPORATION. - ,- ONE CABLE ASSEMBLY BACKAGEO IN A BOLYBAG EIMENSIONS ABE MAYIMNM NNLESS OYHEBWISE SPECIBIED CABLE: SHIELDED 26AWG, 4 YWISYED BAILS,
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26AWG,
Y568B
31MAR2000
16JAN07
16JAN2007
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC DI M -£3- 00 ES R 1G H T S R E S E RV E D. L ± R EV 1S I O N S DIST P LTR DESCRIPTION DATE DWN
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14NOV2008
10FEB2009
16JAN2007
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