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    Edwards Signaling 116DEGEX-FJ

    Visual Signal Indicator, Strobe; Module Lens Colour:Transparent; Supply Voltage Vac:-; Supply Voltage Vdc:33Vdc; Visual Signal Type:Strobe; Lens Diameter:-; Product Range:116Degex Series; Ip/Nema Rating:Nema 3R, Nema 4X Rohs Compliant: No |Edwards Signaling Products 116DEGEX-FJ
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    Newark 116DEGEX-FJ Bulk 1
    • 1 $1809.13
    • 10 $1464.09
    • 100 $1296.23
    • 1000 $1296.23
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    RS 116DEGEX-FJ Bulk 1 1
    • 1 $1881.5
    • 10 $1881.5
    • 100 $1881.5
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    Edwards Signaling 116DEGEXM-FJ

    Strobe, haz Loc,16-33V, sync, mag |Edwards Signaling Products 116DEGEXM-FJ
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    Newark 116DEGEXM-FJ Bulk 1
    • 1 $2071.02
    • 10 $1913.73
    • 100 $1848.19
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    RS 116DEGEXM-FJ Bulk 1
    • 1 $2345.59
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    • 100 $2345.59
    • 1000 $2345.59
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    Edwards Signaling 116DEGEXR-FJ

    Strobe, haz Loc,16-33V, sync, red |Edwards Signaling Products 116DEGEXR-FJ
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    Newark 116DEGEXR-FJ Bulk 1
    • 1 $2542.9
    • 10 $2057.91
    • 100 $1821.97
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    RS 116DEGEXR-FJ Bulk 1
    • 1 $2568.33
    • 10 $2568.33
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    Edwards Signaling 116DEGEXB-FJ

    Strobe, haz Loc,16-33V, sync, blu |Edwards Signaling Products 116DEGEXB-FJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 116DEGEXB-FJ Bulk 1
    • 1 $2071.02
    • 10 $1913.73
    • 100 $1848.19
    • 1000 $1848.19
    • 10000 $1848.19
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    RS 116DEGEXB-FJ Bulk 1
    • 1 $2091.73
    • 10 $2091.73
    • 100 $2091.73
    • 1000 $2091.73
    • 10000 $2091.73
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    Edwards Signaling 116DEGEXG-FJ

    Strobe, haz Loc,16-33V, sync, grn |Edwards Signaling Products 116DEGEXG-FJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 116DEGEXG-FJ Bulk 1
    • 1 $2542.9
    • 10 $2057.91
    • 100 $1821.97
    • 1000 $1821.97
    • 10000 $1821.97
    		Buy Now
    RS 116DEGEXG-FJ Bulk 1
    • 1 $2345.59
    • 10 $2345.59
    • 100 $2345.59
    • 1000 $2345.59
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    16DEG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIR-341ST3F

    Abstract: No abstract text available
    Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm IF50mA) R1010A

    86210 but 70

    Abstract: ids 2560 KGF1921 55076 151169
    Text: ODRKGF1921-04 Electronic Components KGF1921 Issue Date:Jan 20, 2004 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed


    Original     		PDF ODRKGF1921-04 KGF1921 KGF1921, OT-89 KGF1921 27dBm) 05GHz 27dBm 86210 but 70 ids 2560 55076 151169

    toy IR remote control circuit diagram

    Abstract: SIR-341ST3F 940NM data sheet
    Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm toy IR remote control circuit diagram 940NM data sheet

    KGF1155B

    Abstract: KGF1155
    Text: J2Q0012-38-71 作成：1998年 7月 KGF1155B/1155 l 前回作成：1998年 1月 ¡ 電子部品 KGF1155B/1155 小信号アンプ n 概要 KGF1155Bは低雑音、低電流動作を特長とするUHF帯用の小信号アンプです。 外部インピーダンス整合回路は必要ですが、特性は全て5V、850MHz用の固定整合回路（アンプ動


    Original     		PDF J2Q0012-38-71 KGF1155B/1155 KGF1155B/1155 KGF1155BUHF 5V850MHz KGF1155KGF1155BS KGF1155B KGF1155 KGF1155B KGF1155

    9938 GM

    Abstract: 9938 G KGF1175 KGF1175B E 13007 0 t4 3578
    Text: J2Q0015-38-71 作成：1998年 7月 KGF1175B/1175 l 前回作成：1998年 1月 ¡ 電子部品 KGF1175B/1175 小信号アンプ n 概要 KGF1175Bは低雑音、低電流動作を特長とするUHF帯からL帯用の小信号アンプです。 外部インピーダンス整合回路は必要ですが、特性は全て5V、850MHz用の固定整合回路で保証され


    Original     		PDF J2Q0015-38-71 KGF1175B/1175 KGF1175B/1175 KGF1175BUHFL 5V850MHz KGF1175KGF1175BS KGF1175B KGF1175 9938 GM 9938 G KGF1175 KGF1175B E 13007 0 t4 3578

    Z050

    Abstract: RF Driver HEMT 86210 but 70 ids 2560
    Text: ODRKGF1921-05 Electronic Components KGF1921 Issue Date:Jan 20, 2005 Preliminary RF Driver HEMT GENERAL DESCRIPTION The KGF1921, housed in a SOT-89 type plastic-mold package, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1921 specifications are guaranteed to a fixed


    Original     		PDF KGF1921 ODRKGF1921-05 KGF1921, OT-89 KGF1921 27dBm) 05GHz 27dBm Z050 RF Driver HEMT 86210 but 70 ids 2560

    SIR-341ST3F

    Abstract: a940
    Text: Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 mm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation


    Original     		PDF SIR-341ST3F SIR-341ST3F 16deg. a940

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor


    Original     		PDF AN4399

    Untitled

    Abstract: No abstract text available
    Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm R1120A

    Untitled

    Abstract: No abstract text available
    Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm IF50mA) 1/216deg. P940nm) R1120A

    450 khz filter

    Abstract: AN6227FHN gmx matsua
    Text: ICs for Mobile Communication AN6227FHN Single chip, transmission and reception IC for PDC 5.20±0.10 5.00 The AN6227FHN is a transmission and reception IC incorporating reception sleep function for a 1.5 GHz cellular telephone. 19 M Di ain sc te on na tin nc


    Original     		PDF AN6227FHN AN6227FHN 450 khz filter gmx matsua

    C214P

    Abstract: KGF1191 CB 0925 C107P cc 3061
    Text: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の 小信号2段アンプです。


    Original     		PDF J2Q0016-38-71 KGF1191 KGF1191 KGF1191UHFL 3V850MHz -35dBm Z075W, C214P CB 0925 C107P cc 3061

    SIR-341ST3F

    Abstract: No abstract text available
    Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm

    Untitled

    Abstract: No abstract text available
    Text: SIR-341ST3F Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm IF50mA) 1/216deg. P940nm) R1120A

    128 QFP 14x20

    Abstract: 26625 3802 COM16 RTS8505C
    Text: RTS8505C Data Sheet Features .1 Block Diagram .1


    Original     		PDF RTS8505C 14x20 530-ASS-P004 RTS8505C 128 QFP 14x20 26625 3802 COM16

    Untitled

    Abstract: No abstract text available
    Text: Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm R1120A

    SIR-341ST3F

    Abstract: No abstract text available
    Text: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide


    Original     		PDF SIR-341ST3F SIR-341ST3F 940nm

    Untitled

    Abstract: No abstract text available
    Text: 4 DRAWING MA D E THIS IN THIRD DRAWING C ANGLE IS UNPUBLISHED. COPYRIGHT 3 PROJECTION 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL 2 <3> INTERNATIONAL RIGHTS DI ST L OC ,19 AF RESERVED. REV I 5 I 0 N5 50 P F LTR Z O NE DESCRIPTION B D WI R E FUNNEL


    OCR Scan     		PDF 22JUN01 16DEG99 16DEC99 1GDEC99 13469/edmmod -MAR-00

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGF1156_ Small-Signal Amplifier for UHF-Band and P C S Frequencies GENERAL DESCRIPTION The KG F1156 is a small-signal U H F-band amplifier that features high output pow er, high gain, low noise, and low current dissipation. The KG F1156 specifications are guaranteed by the fixed


    OCR Scan     		PDF KGF1156_ F1156 KGF1156 KGF1156 b72424Q 0D22b54 16deg