1N963B
Abstract: MARKING 182 DO-35 zener diode IN 963 B zener diode
Text: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200
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1N957B
1N979B
1N979B
DO-35
1N958B
1N959B
1N960B
1N961B
1N963B
MARKING 182 DO-35 zener diode
IN 963 B zener diode
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Untitled
Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted
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BCW66G
500mA.
OT-23
150degrees
BCW66G
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diode do35 C 4148
Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode do35 C 4148
diode 4448
FAIRCHILD DIODE
diode f 4148
1n914b
fairchild 914
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Untitled
Abstract: No abstract text available
Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC640P
FDC640P
NF073
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FDC633N marking convention
Abstract: No abstract text available
Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDC633N
NF073
FDC633N marking convention
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MARKING 182 DO-35 zener diode
Abstract: No abstract text available
Text: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200
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1N957B
1N979B
1N979B
DO-35
1N958B
1N959B
1N960B
1N961B
MARKING 182 DO-35 zener diode
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transistor BC 458
Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
transistor BC 458
BC 458 transistor
transistor BC 548 Data
bc546 fairchild
BC546BTA
bc546
TRANSISTOR B 546b
BC 546A
of transistor BC548
bc 547 b transistor
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20SSOP
Abstract: LCD Backlight Inverter Drive IC FAN7310 LCD Monitor Inverter
Text: FAN7310 LCD Backlight Inverter Drive Integrated Circuit Features Description High-Efficiency, Single-Stage Power Conversion The FAN7310 provides all the control functions for a series parallel resonant converter and contains a pulse width modulation PWM controller to develop a supply
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FAN7310
30kHz
250kHz
AN-4143:
FAN7310)
FAN7310G
FAN7310GX
20SSOP
LCD Backlight Inverter Drive IC FAN7310
LCD Monitor Inverter
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Untitled
Abstract: No abstract text available
Text: FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDC699P
FDC699P
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4N29 APPLICATION NOTE
Abstract: optocoupler base resistor low voltage optocoupler ic 6-pin
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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4N32M
4N29 APPLICATION NOTE
optocoupler base resistor
low voltage optocoupler ic 6-pin
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1V5KE
Abstract: No abstract text available
Text: 1V5KE6V8 C A - 1V5KE440(C)A Transient Voltage Suppressors 1V5KE6V8(C)A - 1V5KE440(C)A Features • • • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance.
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1V5KE440
E210467.
DO-201AE
DO-201AE
1V5KE62A
1V5KE
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marking 606
Abstract: diode marking EY
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
FDC606P
NF073
marking 606
diode marking EY
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2N 6517 TRANSISTOR
Abstract: 6517 transistor
Text: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector
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2N6517
625mW
2N6520
2N6515
2N6517
O-92-3
2N6517BU
2N6517CBU
2N6517CTA
2N 6517 TRANSISTOR
6517 transistor
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Fairchild 4N32
Abstract: 4n29 optocoupler 4n33s fairchild
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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E90700,
P01101067
4N33300
4N33300W
4N333S
4N333SD
4N33M
4N33S
4N33SD
4N33W
Fairchild 4N32
4n29 optocoupler
4n33s fairchild
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fdh400
Abstract: No abstract text available
Text: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics.
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FDH400
FDLL400
DO-35
LL-34
MMBD1401-1405
FDH/FDLL400
FDH400TR
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Untitled
Abstract: No abstract text available
Text: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value
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BSR18B
OT-23
BSR18B
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Marking 638
Abstract: No abstract text available
Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDC638P
FDC638P
NF073
Marking 638
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BCW71 FAIRCHILD
Abstract: sot23 mark E coding
Text: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCW71
OT-23
BCW71
ND87Z
BCW71 FAIRCHILD
sot23 mark E coding
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BF240
Abstract: BF240 CEB CEB npn DATE CODE FAIRCHILD
Text: BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current
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BF240
25Budgetary
BF240
ND74Z
BF240 CEB
CEB npn
DATE CODE FAIRCHILD
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BC182L
Abstract: IC DATE Code Identification bc 458 c 182l
Text: BC182L BC182L NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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BC182L
100mA.
BC182L
IC DATE Code Identification
bc 458 c
182l
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55C 3V0 ZENER DIODE
Abstract: marking 5c diode zener diode 5C 3v3 5C diode bzx55c5v6 55C 6v8 ZENER DIODE Marking 5c 55C 3V9 ZENER DIODE 5C MARKING BZX55-C24
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
BZX55C56
DO-35
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
55C 3V0 ZENER DIODE
marking 5c diode
zener diode 5C 3v3
5C diode
bzx55c5v6
55C 6v8 ZENER DIODE
Marking 5c
55C 3V9 ZENER DIODE
5C MARKING
BZX55-C24
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2N5210
Abstract: No abstract text available
Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol
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2N5210/MMBT5210
OT-23
2N5210
O-92-3
2N5210BU
2N5210NMBU
2N5210TA
2N5210TAR
2N5210TF
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APPLICATION OF BC548 transistor
Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
APPLICATION OF BC548 transistor
Amplifier with transistor BC548
information of BC548
BC548
for bc548 npn transistor
BC548CTA
transistor bc 547
transistor bc 548 npn
bc 548b transistor
BC549 input
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CYN17
Abstract: 08-if
Text: CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108 Phototransistor Optocouplers Features Applications • UL recognized File # E90700 ■ VDE recognized – Add option V for white package (e.g., CNY17F2VM)
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CNY17X,
CNY17FX,
MOC810X
CNY171,
CNY172,
CNY173,
CNY174,
CNY17F1,
CNY17F2,
CNY17F3,
CYN17
08-if
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