EEPROM
Abstract: M93C86
Text: M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Features • Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W
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M93C86,
M93C76,
M93C66
M93C56,
M93C46
16-bit
M93Cx6
M93Cx6-W
M93Cx6-R
EEPROM
M93C86
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M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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Untitled
Abstract: No abstract text available
Text: RF Signal Relays AXICOM HF3 Relay n Y-Design n Frequency range DC to 3GHz n Impedance 50Ω or 75Ω n Small dimensions 14.6x7.2x10mm n 1 form C contact (1 changeover contact) n Immersion cleanable n Low power consumption (≤140mW) Typical applications Cable modems and linecards/ CATV, Tabs, measurement and test
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2x10mm)
140mW)
12VDC
24VDC
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M93C46
Abstract: M93C56 M93C66 M93C66-R M93C66-W M93C76 M93C76-R M93C76-W M93C86 M93C86-W
Text: M93C86, M93C76, M93C66 M93C56, M93C46 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Features • Industry standard MICROWIRE bus ■ Single supply voltage: – 4.5 V to 5.5 V for M93Cx6 – 2.5 V to 5.5 V for M93Cx6-W
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M93C86,
M93C76,
M93C66
M93C56,
M93C46
16-bit
M93Cx6
M93Cx6-W
M93Cx6-R
M93C46
M93C56
M93C66
M93C66-R
M93C66-W
M93C76
M93C76-R
M93C76-W
M93C86
M93C86-W
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Chip LED with 1.8mm round Subminiature 42-21UYOC/S530-XX/TR8 Features ․Package in 12mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment.․Compatible with infrared and vapor phase reflow
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42-21UYOC/S530-XX/TR8
DSE-421-
16-Aug-2005
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1N963B
Abstract: MARKING 182 DO-35 zener diode IN 963 B zener diode
Text: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200
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1N957B
1N979B
1N979B
DO-35
1N958B
1N959B
1N960B
1N961B
1N963B
MARKING 182 DO-35 zener diode
IN 963 B zener diode
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Untitled
Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted
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BCW66G
500mA.
OT-23
150degrees
BCW66G
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diode do35 C 4148
Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode do35 C 4148
diode 4448
FAIRCHILD DIODE
diode f 4148
1n914b
fairchild 914
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Untitled
Abstract: No abstract text available
Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC640P
FDC640P
NF073
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FDC633N marking convention
Abstract: No abstract text available
Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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FDC633N
NF073
FDC633N marking convention
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MARKING 182 DO-35 zener diode
Abstract: No abstract text available
Text: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200
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1N957B
1N979B
1N979B
DO-35
1N958B
1N959B
1N960B
1N961B
MARKING 182 DO-35 zener diode
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transistor BC 458
Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC546/547/548/549/550
BC546,
BC549,
BC550
BC556
BC560
BC546
BC547/550
BC548/549
transistor BC 458
BC 458 transistor
transistor BC 548 Data
bc546 fairchild
BC546BTA
bc546
TRANSISTOR B 546b
BC 546A
of transistor BC548
bc 547 b transistor
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20SSOP
Abstract: LCD Backlight Inverter Drive IC FAN7310 LCD Monitor Inverter
Text: FAN7310 LCD Backlight Inverter Drive Integrated Circuit Features Description High-Efficiency, Single-Stage Power Conversion The FAN7310 provides all the control functions for a series parallel resonant converter and contains a pulse width modulation PWM controller to develop a supply
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FAN7310
30kHz
250kHz
AN-4143:
FAN7310)
FAN7310G
FAN7310GX
20SSOP
LCD Backlight Inverter Drive IC FAN7310
LCD Monitor Inverter
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Untitled
Abstract: No abstract text available
Text: FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDC699P
FDC699P
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1V5KE
Abstract: No abstract text available
Text: 1V5KE6V8 C A - 1V5KE440(C)A Transient Voltage Suppressors 1V5KE6V8(C)A - 1V5KE440(C)A Features • • • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance.
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1V5KE440
E210467.
DO-201AE
DO-201AE
1V5KE62A
1V5KE
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marking 606
Abstract: diode marking EY
Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.
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FDC606P
FDC606P
NF073
marking 606
diode marking EY
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2N 6517 TRANSISTOR
Abstract: 6517 transistor
Text: 2N6517 2N6517 High Voltage Transistor • • • • Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC max =625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector
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2N6517
625mW
2N6520
2N6515
2N6517
O-92-3
2N6517BU
2N6517CBU
2N6517CTA
2N 6517 TRANSISTOR
6517 transistor
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Fairchild 4N32
Abstract: 4n29 optocoupler 4n33s fairchild
Text: 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
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E90700,
P01101067
4N33300
4N33300W
4N333S
4N333SD
4N33M
4N33S
4N33SD
4N33W
Fairchild 4N32
4n29 optocoupler
4n33s fairchild
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1N5985B
Abstract: 1N5988B 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B
Text: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C
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1N5985B
1N6025B
DO-35
1N5986B
1N5987B
1N5988B
1N5989B
1N6006B
1N5994B
1N5995B
1N5993B
1N6020B
1N5996B
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fdh400
Abstract: No abstract text available
Text: FDH400 / FDLL400 FDH/FDLL 400 COLOR BAND MARKING DEVICE 1ST BAND FDLL400 BROWN 2ND BAND VIOLET LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode Sourced from Process 1J. See MMBD1401-1405 for characteristics.
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FDH400
FDLL400
DO-35
LL-34
MMBD1401-1405
FDH/FDLL400
FDH400TR
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Untitled
Abstract: No abstract text available
Text: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value
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BSR18B
OT-23
BSR18B
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Marking 638
Abstract: No abstract text available
Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDC638P
FDC638P
NF073
Marking 638
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BCW71 FAIRCHILD
Abstract: sot23 mark E coding
Text: BCW71 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCW71
OT-23
BCW71
ND87Z
BCW71 FAIRCHILD
sot23 mark E coding
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BF240
Abstract: BF240 CEB CEB npn DATE CODE FAIRCHILD
Text: BF240 BF240 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 40 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current
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BF240
25Budgetary
BF240
ND74Z
BF240 CEB
CEB npn
DATE CODE FAIRCHILD
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