Untitled
Abstract: No abstract text available
Text: VN750SMP-E High side driver Features Type RDS on IOUT VCC VN750SMP-E 55 mΩ 6A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection
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VN750SMP-E
2002/95/EC
VN750SMP-E
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16812 ms
Abstract: No abstract text available
Text: VN750SMP-E High side driver Features Type RDS on IOUT VCC VN750SMP-E 55 m 6A 36 V • ECOPACK : lead free and RoHS compliant • Automotive Grade: compliance with AEC guidelines • CMOS compatible input • On-state open-load detection • Off-state open-load detection
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VN750SMP-E
2002/95/EC
VN750SMP-E
16812 ms
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VN750SMP
Abstract: 16812 ISO7637 VN750SMP-E 16812 ms
Text: VN750SMP-E High side driver Features Type RDS on IOUT VCC VN750SMP-E 55 mΩ 6A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection
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VN750SMP-E
2002/95/EC
VN750SMP-E
VN750SMP
16812
ISO7637
16812 ms
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asm 1442
Abstract: MSM6388GS MSM6376GS-BK ML60852ATB MSM6322GS MSM5205RS MSM65P516-NGS-1K MSM6376-GS-BK MSM6376GSBK ML60852TB
Text: No. 138 144 3411 3413 3414 3415 3419 10681 10956 11042 11307 11308 11309 11696 11697 11698 11701 11906 11907 12207 12208 12209 12210 12756 12758 12759 12761 12765 12770 12772 12805 12808 12814 12815 12832 12835 12837 12846 12847 13924 14267 14500 14503 14507
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ML60851BGA
ML60852TB
MSM5052-01
MSM5052-02
MSM5052-10
MSM60801TS-K
MSM60851TB
MSM631dard
asm 1442
MSM6388GS
MSM6376GS-BK
ML60852ATB
MSM6322GS
MSM5205RS
MSM65P516-NGS-1K
MSM6376-GS-BK
MSM6376GSBK
ML60852TB
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MSM5205RS
Abstract: ML60852TB MSM6388GS ML60852ATB MSM6258VJS asm 1442 MSC7154 MSM5218RS asm 1441 Asm 1440
Text: No. 138 144 3411 3413 3414 3415 3419 10681 10956 11042 11307 11308 11309 11696 11697 11698 11701 11906 11907 12207 12208 12209 12210 12756 12758 12759 12761 12765 12770 12772 12805 12808 12814 12815 12832 12835 12837 12846 12847 13924 14267 14500 14503 14507
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ML60851BGA
ML60852TB
MSM5052-01
MSM5052-02
MSM5052-10
MSC1157
MSC1157MS-K
MSC1157MS-KR1
MSM5205RS
ML60852TB
MSM6388GS
ML60852ATB
MSM6258VJS
asm 1442
MSC7154
MSM5218RS
asm 1441
Asm 1440
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515 TCI
Abstract: LED wavelength 440 smd TLMB3140 TLMBG3100 TLMTG3100 16-MAR-01
Text: TLMB/TLMBG/TLMTG31. Preliminary Vishay Telefunken High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing
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TLMB/TLMBG/TLMTG31.
TLMB3140
TLMBG3100
TLMTG3100
D-74025
16-Mar-01
515 TCI
LED wavelength 440 smd
TLMB3140
TLMBG3100
TLMTG3100
16-MAR-01
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TLMB3140
Abstract: TLMBG3100 TLMTG3100
Text: TLMB/TLMBG/TLMTG31. Preliminary Vishay Semiconductors High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing
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TLMB/TLMBG/TLMTG31.
TLMB3140
TLMBG3100
TLMTG3100
D-74025
16-Mar-01
TLMB3140
TLMBG3100
TLMTG3100
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Untitled
Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
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CNX82
Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
CNX82
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K1 MARK 6PIN
Abstract: MOC1193S
Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES
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MOC119
MOC119
E90700
diffe700,
P01101067
MOC119300
MOC119300W
MOC1193S
MOC1193SD
K1 MARK 6PIN
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OSRAM OPTO SEMICONDUCTORS GmbH
Abstract: No abstract text available
Text: VLMTG31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave
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VLMTG31.
J-STD-020C
JESD22-A114-B
08-Apr-05
OSRAM OPTO SEMICONDUCTORS GmbH
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ltt673q1
Abstract: LTT673-N2S1
Text: VLMTG31. Vishay Semiconductors High Intensity SMD LED FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave
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VLMTG31.
J-STD-020C
JESD22-A114-B
08-Apr-05
ltt673q1
LTT673-N2S1
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4N33 APPLICATION NOTE
Abstract: 4N32 test circuit K1 6PIN 4N33 "cross reference" 4n33 schematic 4n32 6pin rl 4N29 APPLICATION NOTE
Text: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current
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P01101067
E90700,
4N33 APPLICATION NOTE
4N32 test circuit
K1 6PIN
4N33 "cross reference"
4n33 schematic
4n32
6pin rl
4N29 APPLICATION NOTE
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4N33 APPLICATION NOTE
Abstract: Fairchild 4N32 4N33 K1 6PIN 4N29
Text: GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N31 4N32 4N33 FEATURES • High sensitivity to low input drive current
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P01101067
E90700,
4N33 APPLICATION NOTE
Fairchild 4N32
4N33
K1 6PIN
4N29
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h11dx
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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H11DX
Abstract: H11D1 H11D2
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
H11D2
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6-PIN marking FA
Abstract: QT Optoelectronics K/bar code phototransistor
Text: 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description • UL recognized File # E90700, Volume 2 The general purpose optocouplers consist of a gallium
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H11AXM
4N25M,
4N26M,
4N27M,
4N28M,
4N35M,
4N36M,
4N37M,
H11A1M,
H11A2M,
6-PIN marking FA
QT Optoelectronics
K/bar code phototransistor
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Untitled
Abstract: No abstract text available
Text: VLMTG31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave
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VLMTG31.
J-STD-020C
JESD22-A114-B
18-Jul-08
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H11DX
Abstract: H11D4.300 H11D12 4N38
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D4.300
H11D12
4N38
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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MSM16812
Abstract: 256X8
Text: O K I sem iconductor M SM 16812 2,048-BIT SERIAL E2PROM FEATURES • CMOS Floating Gate Technology • Single +5-volt supply • Eight pin plastic package • 128 x 16 or 256 x 8 user selectable serial memory • Microwire compatible PIN CONFIGURATION TOP VIEW
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OCR Scan
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PDF
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MSM16812
048-BIT
256x8
MSM16812Â
128x16
MSM16812
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60/-70 HYM64V4045GU-50/-60/-70 HYM72 V4005G U-50/-60/-70 HYM72V4045GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information •
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64-Bit
72-Bit
HYM64V4005GU-50/-60/-70
HYM64V4045GU-50/-60/-70
HYM72
V4005G
U-50/-60/-70
HYM72V4045GU-50/-60/-70
168pin
B235bD5
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592-3030-013
Abstract: 592-2023-013
Text: REV. PART POSITION NUMBER 592-2020-002 1 POSITION RED RED 592-2020-013 [H I.EFF] [H I.EFF] 592-2023-002 RED LEVEL 592-XXX-002 PACKAGING SPECIFICATION SCALE 2.000 2 GREEN [H I.EFF] 592-2023-013 MOISTURE 2 o o POCKET SHOWN WITH NO PRODUCT FOR CLARITY o o o o
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592-XXX-002
592-XXXX-013
592-2124-002ESS
592-3030-013
592-2023-013
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