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    1676G Search Results

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    1676G Price and Stock

    Skyworks Solutions Inc SI5332BD11676-GM3

    Clock Generators & Support Products Low jitter, 12-output, any-frequency (< 200 MHz), any output clock generator (INT+FRAC)
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    Mouser Electronics SI5332BD11676-GM3
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    Richardson RFPD SI5332BD11676-GM3 1
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    Skyworks Solutions Inc SI5332BD11676-GM3R

    Clock Generators & Support Products Low jitter, 12-output, any-frequency (< 200 MHz), any output clock generator (INT+FRAC)
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    Mouser Electronics SI5332BD11676-GM3R
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    Richardson RFPD SI5332BD11676-GM3R 1
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    NEC Electronics Group UPC1676G-T1

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    Bristol Electronics UPC1676G-T1 12,872
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    Component Electronics, Inc UPC1676G-T1 3,000
    • 1 $1.69
    • 10 $1.69
    • 100 $1.27
    • 1000 $1.1
    • 10000 $1.1
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    1676G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MP 1009 es

    Abstract: 1GHz PRESCALER PC1676G UPC1651G PC1676 GP 004 DIODE 1676G GP 023 DIODE upc1651 vgp-12
    Text: GENERAL-PURPOSE HIGH-FREQUENCY WIDEBAND AMPLIFIERS µPC1675G, µ1676G, µPC1688G 1. GENERAL The µPC1675G, µ1676G and µPC1688G are silicon monolithic ICs developed as general-purpose high- frequency wideband amplifiers. These ICs are based on the µPC1651G packaged in a 4-pin disc mold. The present ICs are each packaged in


    Original
    PDF PC1675G, PC1676G, PC1688G PC1676G PC1688G PC1651G RC-1009) MP 1009 es 1GHz PRESCALER UPC1651G PC1676 GP 004 DIODE 1676G GP 023 DIODE upc1651 vgp-12

    Untitled

    Abstract: No abstract text available
    Text: NEC UPC1676B 1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • W ID E B A N D W ID T H : 1200 M H z T Y P at 3 dB Point for U P C 1676G 1300 M H z T Y P at 3 dB Point for U P C 16 7 6 B /P


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    PDF UPC1676B UPC1676G UPC1676P OT-143) 1676G UPC1676B, UPC1676G,

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    UPC1676B

    Abstract: UPC1676 mmic s5 UPC1676G UPC1676P
    Text: NEC UPC1676B 1676G UPC1676P 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm O UTLINE 39 (SOT-143) • W ID E BAND W IDTH: +02 1200 MHz TYP at 3 dB Point for 1676G 1300 MHz TYP at 3 dB Point for UPC1676B/P


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    PDF UPC1676B UPC1676G UPC1676P UPC1676B/P UPC1676 UPC1676G) UPC1676B) UPC1676P) mmic s5 UPC1676P

    PC1676G

    Abstract: No abstract text available
    Text: 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER FEATURES 1676G UPC1676P u p c i 6?6g NOISE FIGURE AND GAIN -• WIDE BANDWIDTH: 1200 MHz at 3 dB Point for 1676G 1300 MHz at 3 dB Point for UPC1676B, UPC1676P


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    PDF UPC1676G UPC1676B, UPC1676P UPC1676G) UPC1676 UPC1676G-T1 PC1676G