Untitled
Abstract: No abstract text available
Text: Voltage Controlled Oscillators MW500-1193 1670MHz to 2150MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1670MHz to 2150MHz 1/10 V 7 +/- 1.5 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -97 typ dBc/Hz
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MW500-1193
1670MHz
2150MHz
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Untitled
Abstract: No abstract text available
Text: MAPLST1617-030CF LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V M/A-COM Products Released - Rev. 07.07 Product Image Designed for INMARSAT applications in the 1620-1670 MHz frequency band. • • Typical two tone performance IMD=-30 dBc : Average output power: 15W
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MAPLST1617-030CF
1670MHz)
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Untitled
Abstract: No abstract text available
Text: MAPL-000817-015CPC LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V M/A-COM Products Released - Rev. 07.08 Product Image Designed for broadband commercial applications up to 1.7GHz • • • • High gain, high efficiency and high linearity Aluminum-Copper Metallization for high reliability
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MAPL-000817-015CPC
960MHz,
26Vdc,
960MHz
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Untitled
Abstract: No abstract text available
Text: RF2053 RF2053High Performance Fractional-N Synthesizer with Integrated RF Mixer HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features Fractional-N Synthesizer Very Fine Frequency Resolution
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RF2053
RF2053High
32-Pin,
26MHz
23dBm
com/rf205x.
32-Pin
25pcs
RF2053SB
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Untitled
Abstract: No abstract text available
Text: RF2053 RF2053 HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features Fractional-N Synthesizer Very Fine Frequency Resolution 1.5Hz for 26MHz Reference On-Chip Crystal-Sustaining Circuit With Programmable
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RF2053
32-Pin,
26MHz
23dBm
30MHz
2500MHz
com/rf205x.
32-Pin
25pcs
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Untitled
Abstract: No abstract text available
Text: MAPL-000817-015CPC LDMOS RF Line Power FET Transistor 15 W , 800-1700 MHz, 26V M/A-COM Products Released - Rev. 07.08 Product Image Designed for broadband commercial applications up to 1.7GHz • • • • High gain, high efficiency and high linearity Aluminum-Copper Metallization for high reliability
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MAPL-000817-015CPC
960MHz,
26Vdc,
960MHz
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Untitled
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, Ilminster Somerset, TA19 9DQ, UK SAW Filter 1621.250MHz Part No: MP05833 Model: TA1496A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD
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250MHz
MP05833
TA1496A
10dBm
1475MHz
1570MHzectronics
TA1496A
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Untitled
Abstract: No abstract text available
Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 1747.50MHz Part No: MP01784 Model: TA0762A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: +20dBm 2. DC voltage: 0V
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50MHz
MP01784
TA0762A
20dBm
1785MHz)
1670MHz
1690MHz
1880MHz
4500MHz
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HMC838LP6C
Abstract: No abstract text available
Text: HMC838LP6CE v01.0410 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz Features • RF Bandwidth: 795 - 945, 1590 - 1890, 3180 - 3780 MHz • 24-bit Step Size, Resolution 3 Hz typ • Ultra Low Phase Noise -111 dBc/Hz in Band Typ.
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HMC838LP6CE
24-bit
HMC838LP6CE
HMC860LP3E
HMC838LP6C
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Tuneable PCB Antenna 900
Abstract: meander folded antenna RF pcb antenna for GSM meander line PCB helix antenna planar inverted f antenna
Text: PA.25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING ENVIRONMENTAL CONSIDERATIONS
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tunable antenna
Abstract: planar inverted f antenna meander folded antenna meander line meander antenna design 1820MHz
Text: the antenna solutions provider PA-25 Antenna Integration Application Note Version 2 CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. BASICS APPLICATIONS GROUND PLANE EFFECTS IMPEDANCE BANDWIDTH VSWR GAIN EFFICIENCY POLARIZATION ADVANTAGES MOUNTING
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PA-25
tunable antenna
planar inverted f antenna
meander folded antenna
meander line
meander antenna design
1820MHz
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WSN-4G
Abstract: No abstract text available
Text: Frequency Synthesizer Typical Performance Data WSN-4G+ Power Output Vs Frequency 10 9 9 8 8 Power Output dBm Power Output (dBm) Power Output Vs Frequency 10 7 6 5 4 3 6 5 4 3 -45°C +25°C 2 7 -45°C +25°C 2 +85°C +85°C 1 700 1 750 800 850 900 950 1000
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4000MHz
WSN-4G
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LDMOS 15w
Abstract: MAPLST1617-030CF
Text: MAPLST1617-030CF LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V Released - Rev. 07.07 Product Image Designed for INMARSAT applications in the 1620-1670 MHz frequency band. • • Typical two tone performance IMD=-30 dBc : Average output power: 15W
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MAPLST1617-030CF
1670MHz)
LDMOS 15w
MAPLST1617-030CF
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DP10T
Abstract: ant2 0.3 23 CXM3525ER VQFN-30P
Text: DP10T Antenna Switch Module for GSM/UMTS Dual Mode Phones Preliminary Preliminary CXM3525ER Description The CXM3525ER is a DP10T anntena switch module for GSM/UMTS dual mode handset. The CXM3525ER has a built-in dual low pass filter and a +1.8V CMOS compatible decoder.
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DP10T
CXM3525ER
CXM3525ER
1648-1830MHz
3420-3820MHz
ant2 0.3 23
VQFN-30P
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max 1907
Abstract: 2142MH max 1907 datasheet
Text: SPECIFICATION OF DIELECTRIC TOKO P/N: FILTER TDF3A-1907E-18 1. OUTLINE DIMENSION Marking:1907-18 TOKO L : 6.1 B : 3.0 tolerance : ±0.3 unit : mm ¡ £ OUT GND GND ¢ ¤ IN GND GND 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY Fo PASSBAND WIDTH SPECIFICATION
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TDF3A-1907E-18
1421MHz
1670MHz
2142MHz
3340MHz
3836MHz
5009MHz
5754MHz
00MHz
max 1907
2142MH
max 1907 datasheet
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atc100a
Abstract: LDMOS 15w transistor amplifier a05t A05T RO4350 0945 transistor
Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 7/27/06 MAPL-000817-015CPC Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,
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MAPL-000817-015CPC
960MHz,
26Vdc,
960MHz
atc100a
LDMOS 15w
transistor amplifier a05t
A05T
RO4350
0945 transistor
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atc100a
Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,
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MAPLST0817-015PP
960MHz,
26Vdc,
960MHz
atc100a
omni spectra sma
TRANSISTOR Z4
OZ 960
LDMOS 15w
RO4350
25 pin microstrip connector
transistor z9
transistor z5
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 1747.50MHz Part No: MA07865 Model: TA0391A Rev. No: 1 A. MAXIMUM RATING: 1. Input Power Level: 5dBm 2. DC voltage: 0V
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50MHz
MA07865
1785MHz)
1670MHz
1690MHz
1880MHz
4500MHz
5000MHz
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UMS-2150-R16
Abstract: No abstract text available
Text: RF2053 RF2053High Performance Fractional-N Synthesizer with Integrated RF Mixer HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features Fractional-N Synthesizer Very Fine Frequency Resolution
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RF2053High
RF2053
32-Pin,
26MHz
300MHz
2400MHz
23dBm
30MHz
2500MHz
com/rf205x.
UMS-2150-R16
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Untitled
Abstract: No abstract text available
Text: RF2053 RF2053High Performance Fractional-N Synthesizer with Integrated RF Mixer HIGH PERFORMANCE FRACTIONAL-N SYNTHESIZER WITH INTEGRATED RF MIXER Mixer Package: QFN, 32-Pin, 5mmx5mm Features Fractional-N Synthesizer Very Fine Frequency Resolution
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RF2053
RF2053High
32-Pin,
26MHz
300MHz
2400MHz
30MHz
2500MHz
com/rf205x.
32-Pin
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF TOKO P/No: 1. OUTLINE DIELECTRIC FILTER TDF3A-1907E-19A DIMENSION 4.7 5.7 Marking:1907-19 L : 5.9 B : 2.5 TOKO 2. ELECTRICAL tolerance: ±0.3 unit: mm <D OUT D GND © © IN GND CHARACTERISTICS CENTER FREQUENCY (Fo PASSBAND WIDTH SPECIFICATION
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TDF3A-1907E-19A
1421MHz
1670MHz
2142MHz
3340MHz
3836MHz
5009MHz
5754MHz
00MHz
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4588d
Abstract: Toko TDFM3A-1907E-11A
Text: SPECIFICATION OF TOKO P/No: 1. OUTLINE DIELECTRIC FILTER TDFM3A-1907E-11A DIMENSION 3.7 3 .3 4,5 0.8 oo 00 TERM INAL IN OUT © GND GND © © © GND Marking: 1 9 0 7 11 T o le ra n ce :± 0 .3 U nit :m m 2. ELECTRICAL CHARACTERISTICS SPECIFICATION Center Frequency Fo
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TDFM3A-1907E-11A
12MHz
1421MHz
1670MHz
2167MHz
3340MHz
3836MHz
5009MHz
5754MHz
4588d
Toko
TDFM3A-1907E-11A
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LFA30-2A1E104M TE
Abstract: No abstract text available
Text: MULTILAYER DEVICES LC FILTERS-BAND PASS, CHIP MULTILAYER m u F fn t n cn £leefrcnic$ LFSN & LFA S e rie s FE A TU R ES • Small size: see dimensions ■ Metal shielding on inner chip ■ No adjustment required ■ Tape and reel packaging ■ Reflow solderable
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200MFIz
LFSN25N1
CG01-J
LFSB25N1
LFA30-2A1E104M TE
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LFSC25N12B0315B
Abstract: LFA30-12B0865B010 LFB30N12 LFB30N LFSN20N LFA30 LFSN30N17 LFB30 LFSN30N17C LFB30N12B
Text: MULTILAYER D EVICES LC FILTERS-BAND PASS, CHIP MULTILAYER m u fín ta Aw &ata* ¿* Bccfrc*tts LFSN & LFA Series F EAT U RES • ■ ■ ■ ■ ■ ■ Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging
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200MHz
LFSN20N
LFSN25N1
LFA30
LFSB25N1
LFSN20
LFSG20N
LFSG25N
LFSL20N
LFSC25N12B0315B
LFA30-12B0865B010
LFB30N12
LFB30N
LFA30
LFSN30N17
LFB30
LFSN30N17C
LFB30N12B
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