Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    165PIN Search Results

    165PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MS-026

    Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
    Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •


    Original     		PDF MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 100-Pin 119-Pin 165-pin MT55L512L18P MS-026 MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512V18P

    MT55L256L18P1T-10A

    Abstract: MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal
    Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •


    Original     		PDF MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 August/7/00 119-pin 165-pin MT55L256L18P1 MT55L256L18P1T-10A MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal

    K7Q161852A

    Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
    Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control


    Original     		PDF K7Q163652A K7Q161852A 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161852A K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16

    MT58L64L36P

    Abstract: MS-026 MT58L128L18P MT58L128V18P MT58L64L32P MT58L64V32P MT58L64V36P
    Text: NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM 2Mb SYNCBURST SRAM MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, SingleCycle Deselect FEATURES


    Original     		PDF MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P June/21/00 x32/36 165-Pin March/3/00 MT58L64L36P MS-026 MT58L128L18P MT58L128V18P MT58L64L32P MT58L64V32P MT58L64V36P

    10D-11

    Abstract: K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20
    Text: K7R163682B K7R161882B K7R160982B 512Kx36 & 1Mx18 & 2Mx9 QDR TM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Oct. 17, 2002 Advance 0.1 1. Change the Boundary scan exit order.


    Original     		PDF K7R163682B K7R161882B K7R160982B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit, 10D-11 K7R160982B K7R160982B-FC16 K7R160982B-FC20 K7R161882B K7R161882B-FC16 K7R161882B-FC20 K7R163682B K7R163682B-FC16 K7R163682B-FC20

    K7Q161864B-FC16

    Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
    Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7Q163664B K7Q161864B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161864B-FC16 D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16

    K7M643635M-Q

    Abstract: No abstract text available
    Text: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz


    Original     		PDF K7N643631M K7N641831M 2Mx36 4Mx18 4Mx18-Bit 200MHz) K7N643635M K7N643631M) 50REF K7M643635M-Q

    K7N161801A

    Abstract: K7N163601A
    Text: K7N163601A K7N161801A 512Kx36 & 1Mx18 Pipelined NtRAM TM Document Title 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Initial document. Add JTAG Scan Order Add x32 org and industrial temperature . Add 165FBGA package Speed bin merge.


    Original     		PDF K7N163601A K7N161801A 512Kx36 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163601A

    D0-35

    Abstract: K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25
    Text: K7J163682B K7J161882B 512Kx36 & 1Mx18 DDR II SIO b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 1. Change the JTAG Block diagram Dec. 26, 2002 Preliminary


    Original     		PDF K7J163682B K7J161882B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit 165FBGA D0-35 K7J161882B K7J161882B-FC16 K7J161882B-FC20 K7J161882B-FC25 K7J163682B K7J163682B-FC16 K7J163682B-FC20 K7J163682B-FC25

    IS61LPD51236A

    Abstract: IS61LPD102418A IS61VPD102418A IS61VPD51236A
    Text: IS61VPD51236a IS61VPD102418a IS61lPD51236a IS61LPD102418a 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    Original     		PDF IS61VPD51236a IS61VPD102418a IS61lPD51236a IS61LPD102418a 1024K 100-Pin 165-pin IS61LPD102418A IS61VPD102418A

    IS61LPD102418A

    Abstract: IS61LPD51236A IS61VPD102418A IS61VPD51236A
    Text: ISSI IS61VPD51236A IS61VPD102418A IS61LPD51236A IS61LPD102418A 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    Original     		PDF IS61VPD51236A IS61VPD102418A IS61LPD51236A IS61LPD102418A 1024K 100-Pin 165-pin package30 PK13197LQ 5M-1982. IS61LPD102418A IS61VPD102418A

    HM66AQB18202

    Abstract: HM66AQB18202BP-40 HM66AQB36102 HM66AQB36102BP-40 HM66AQB36102BP-50 HM66AQB36102BP-60 HM66AQB9402
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 HM66AQB18202 HM66AQB18202BP-40 HM66AQB36102 HM66AQB36102BP-40 HM66AQB36102BP-50 HM66AQB36102BP-60 HM66AQB9402

    IS61LPS102418A

    Abstract: IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61LPS51236A-200TQLI 1024Kx18
    Text: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A ISSI 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		PDF IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 1024K JEDE30 PK13197LQ 5M-1982. IS61LPS102418A IS61LPS25672A IS61LPS51236A IS61LPS51236A-200TQLI 1024Kx18

    GS8342Q36E-200

    Abstract: GS8342Q36E-250 GS8342Q36E-300
    Text: Preliminary GS8342Q08/09/18/36E-300/250/200/167 36Mb SigmaQuad-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 167 MHz–300 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


    Original     		PDF GS8342Q08/09/18/36E-300/250/200/167 165-Bump 165-bump, in-165-Pin GS8342Q08GE-200I 165-Pin GS8342Q08GE-167I GS8342x36E-200T. GS8342Q36E-200 GS8342Q36E-250 GS8342Q36E-300

    NC-2H

    Abstract: K7B161825A K7B163225A K7B163625A
    Text: K7B163625A K7B163225A K7B161825A Preliminary 512Kx36/32 & 1Mx18 Synchronous SRAM Document Title 512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial draft 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		PDF K7B163625A K7B163225A K7B161825A 512Kx36/32 1Mx18 512Kx36/x32 1Mx18-Bit 165FBGA NC-2H K7B161825A K7B163225A K7B163625A

    K7N161801A

    Abstract: K7N163201A K7N163601A
    Text: K7N163601A K7N163201A K7N161801A Preliminary 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 0.3 Draft Date History 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		PDF K7N163601A K7N163201A K7N161801A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636 K7N161801A K7N163201A K7N163601A

    Untitled

    Abstract: No abstract text available
    Text: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7I163684B K7I161884B 512Kx36 1Mx18 165FBGA 11x15

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


    Original     		PDF MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F July/18/00 119-Pin 165-pin June/13/00

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation


    Original     		PDF MT54V512H18E 512Kx18) MT54V512H18E

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE


    Original     		PDF MT54V512H18A 165-Pin MT54V512H18A

    IS61LPD51218A

    Abstract: IS61LPD25636A IS61VPD25636A IS61VPD51218A
    Text: ISSI IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and


    Original     		PDF IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 100-Pin 119-pin 165-pin PK13197LQ 5M-1982. IS61LPD51218A IS61LPD25636A

    qfn 3x3 tray dimension

    Abstract: XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga
    Text: Device Package User Guide [Guide Subtitle] [optional] UG112 v3.5 November 6, 2009 [optional] R R Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the


    Original     		PDF UG112 UG072, UG075, XAPP427, qfn 3x3 tray dimension XCDAISY BFG95 XC5VLX330T-1FF1738I pcb footprint FS48, and FSG48 WS609 jedec so8 Wire bond gap XC3S400AN-4FG400I FFG676 XC4VLX25 cmos 668 fcbga

    IS61LPS25632A

    Abstract: IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A
    Text: IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A 256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, Single CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write


    Original     		PDF IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A, IS61VPS51218A, IS61VPS25636A PK13197LQ 5M-1982. IS61LPS25632A IS61LPS25636A IS61LPS51218A IS61VPS25636A IS61VPS51218A

    Untitled

    Abstract: No abstract text available
    Text: K7N163645A K7N163245A K7N161845A 512Kx36/32 & 1Mx18 Pipelined NtRAMTM Document Title 512Kx36/32 & 1Mx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Add x32 org and industrial temperature .


    Original     		PDF K7N163645A K7N163245A K7N161845A 512Kx36/32 1Mx18 1Mx18-Bit 165FBGA K7N1636